APT25GN120B2DQ2G [ADPOW]
IGBT; IGBT
| 型号： | APT25GN120B2DQ2G |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | IGBT |
| 文件： | 总9页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1200V
APT25GN120B2DQ2
APT25GN120B2DQ2G*
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
(B2)
T-Max®
results in superior V
performance. Easy paralleling results from very tight
CE(on)
parameter distribution and slightly positive V
temperature coefficient. Built-in
CE(on)
gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive
design and minimizes losses.
• 1200V NPT Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 10µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
C
E
G
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
Symbol
APT25GN120B2DQ2(G)
UNIT
VCES
Collector-Emitter Voltage
1200
Volts
VGE
IC1
Gate-Emitter Voltage
±30
67
Continuous Collector Current @ TC = 25°C
IC2
Continuous Collector Current @ TC = 110°C
33
Amps
1
Pulsed Collector Current
@ TC = 150°C
ICM
75
Switching Safe Operating Area @ TJ = 150°C
75A @ 1200V
272
SSOA
PD
Total Power Dissipation
Watts
°C
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
300
TL
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
1200
5
TYP
MAX
Units
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 150µA)
VGE(TH)
5.8
1.7
1.9
6.5
2.1
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
Volts
1.4
VCE(ON)
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
200
TBD
600
ICES
µA
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
IGES
nA
RGINT
8
Ω
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT25GN120B2DQ2(G)
DYNAMIC CHARACTERISTICS
Test Conditions
Capacitance
Characteristic
Symbol
MIN
TYP
1800
105
85
MAX
UNIT
Cies
Coes
Cres
VGEP
Qg
Input Capacitance
Output Capacitance
pF
VGE = 0V, VCE = 25V
f = 1 MHz
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
9.5
V
Gate Charge
VGE = 15V
VCE = 600V
IC = 25A
3
Total Gate Charge
155
10
Qge
Qgc
Gate-Emitter Charge
nC
Gate-Collector ("Miller") Charge
85
TJ = 150°C, RG = 4.3Ω 7, VGE
=
Switching Safe Operating Area
Short Circuit Safe Operating Area
SSOA
A
75
10
15V, L = 100µH,VCE = 1200V
VCC = 960V, VGE = 15V,
TJ = 125°C, RG = 4.3Ω 7
µs
SCSOA
td(on)
Inductive Switching (25°C)
22
17
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
tr
VCC = 800V
VGE = 15V
IC = 25A
ns
td(off)
280
135
TBD
1490
2150
22
tf
RG = 4.3Ω 7
4
Eon1
Eon2
Turn-on Switching Energy
TJ = +25°C
5
µJ
ns
Turn-on Switching Energy (Diode)
6
Eoff
Turn-off Switching Energy
td(on)
Inductive Switching (125°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
tr
VCC = 800V
VGE = 15V
IC = 25A
17
td(off)
tf
335
225
Current Fall Time
RG = 4.3Ω 7
4 4
Eon1
Eon2
Eoff
TBD
2390
3075
Turn-on Switching Energy
TJ = +125°C
55
Turn-on Switching Energy (Diode)
µJ
66
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
UNIT
MIN
TYP
MAX
.46
R
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
θJC
°C/W
gm
R
.67
θJC
WT
5.9
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT25GN120B2DQ2(G)
80
70
60
50
40
30
20
80
15V
15V
70
12V
60
50
12V
11V
10V
11V
40
10V
30
9V
8V
9V
8V
20
10
0
10
0
7V
7V
10
, COLLECTER-TO-EMITTER VOLTAGE (V)
0
5
15
0
5
10
15
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1, Output Characteristics(T = 25°C)
FIGURE 2, Output Characteristics (T = 125°C)
J
J
16
14
12
75
250µs PULSE
TEST<0.5 % DUTY
CYCLE
I
T
= 25A
= 25°C
C
J
60
45
30
V
V
= 240V
= 600V
CE
TJ = 125°C
CE
10
8
V
= 960V
CE
TJ = 25°C
6
TJ = -55°C
4
15
0
2
0
0
2
4
6
8
10
12
14
0
20 40 60 80 100 120 140 160 180
GATE CHARGE (nC)
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
4
3.5
3
3
2.5
2
T
J = 25°C.
I
= 50A
250µs PULSE TEST
<0.5 % DUTY CYCLE
C
I
= 50A
C
2.5
2
I
= 25A
C
I
= 25A
C
1.5
1
I
= 12.5A
1.5
C
I
= 12.5A
C
1.0
0.5
0
0.5
0
V
GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
8
10
12
14
16
-50 -25
0
25
50
75 100 125
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
90
1.10
80
70
60
50
40
30
20
1.05
1.00
0.95
0.90
10
0
-50 -25
0
25
50
75
100 125
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT25GN120B2DQ2(G)
350
300
250
200
150
100
50
30
25
20
15
10
5
VGE =15V,TJ=125°C
V
= 15V
GE
VGE =15V,TJ=25°C
VCE = 800V
TJ = 25°C, TJ =125°C
RG = 4.3Ω
VCE = 800V
RG = 4.3Ω
L = 100 µH
L = 100 µH
0
I
0
I
10 15 20 25 30 35 40 45 50 55
, COLLECTOR TO EMITTER CURRENT (A)
10
20
30
40
50
60
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
45
300
R
G = 4.3Ω, L = 100µH, VCE = 800V
RG = 4.3Ω, L = 100µH, VCE = 800V
40
35
30
25
20
15
10
5
250
200
150
100
50
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
TJ = 25 or 125°C,VGE = 15V
0
I
0
I
10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40
45 50 55
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
7000
6000
5000
4000
3000
2000
7000
6000
5000
4000
3000
2000
V
V
R
=
=
800V
+15V
V
V
R
=
=
800V
+15V
CE
GE
CE
GE
= 4.3Ω
= 4.3Ω
G
G
TJ = 125°C, VGE = 15V
TJ = 125°C,VGE =15V
T
J = 25°C, VGE = 15V
1000
0
1000
0
T
J = 25°C,VGE =15V
10 15 20 25 30 35 40 45 50 55
, COLLECTOR TO EMITTER CURRENT (A)
10 15 20 25 30 35 40 45 50 55
I , COLLECTOR TO EMITTER CURRENT (A)
CE
I
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
14000
7000
V
V
T
=
=
800V
+15V
V
V
R
=
=
800V
+15V
CE
GE
CE
GE
E
50A
off,
E
50A
= 125°C
= 4.3Ω
on2,
J
12000
10000
8000
6000
4000
6000
5000
4000
3000
2000
G
E
50A
off,
E
50A
25A
on2,
E
off,
E
25A
E
25A
off,
on2,
E
12.5A
E
E
12.5A
12.5A
E
25A
20
off,
off,
on2,
2000
0
1000
0
E
12.5A
on2,
on2,
40
0
10
30
50
0
25
50
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT25GN120B2DQ2(G)
80
70
60
50
40
30
20
4,000
Cies
1,000
500
Coes
Cres
100
50
10
0
10
0
10
20
30
40
50
0
V
200 400 600 800 1000 1200 1400
, COLLECTOR TO EMITTER VOLTAGE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0.50
0.9
0.40
0.7
0.30
0.5
Note:
0.20
t
1
0.3
t
2
0.10
SINGLE PULSE
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
0.1
+ T
C
J
DM
θJC
0.05
0
10-5
10-4
10-3
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-2
10-1
1.0
RC MODEL
0.231
140
100
Junction
temp. (°C)
0.00403F
0.132F
Power
(watts)
50
Fmax = min (fmax, fmax2
)
0.230
0.05
fmax1
=
=
td(on) + tr + td(off) + tf
Case temperature. (°C)
Pdiss - Pcond
Eon2 + Eoff
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
fmax2
T
T
=
125°C
75°C
J
=
C
D = 50 %
TJ - TC
RθJC
V
R
= 800V
= 4.3Ω
Pdiss
=
CE
G
10
5
10 15 20 25
30 35 40 45
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
APT25GN120B2DQ2(G)
Gate Voltage
10%
td(on)
APT40DQ120
T
= 125°C
J
90%
VCE
IC
VCC
tr
Collector Current
CollectorVoltage
5%
10%
5%
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
VTEST
90%
*DRIVER SAME TYPE AS D.U.T.
Gate Voltage
T
= 125°C
J
A
CollectorVoltage
td(off)
VCE
IC
90%
100uH
VCLAMP
B
tf
10%
0
A
Collector Current
D.U.T.
DRIVER*
Switching Energy
Figure 24, E
Test Circuit
Figure 23, Turn-off Switching Waveforms and Definitions
ON1
TYPICAL PERFORMANCE CURVES
APT25GN120B2DQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol
IF(AV)
Characteristic / Test Conditions
APT25GN120B2DQ2(G)
UNIT
Maximum Average Forward Current (TC = 112°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
40
63
IF(RMS)
Amps
IFSM
210
STATIC ELECTRICAL CHARACTERISTICS
Symbol
UNIT
Characteristic / Test Conditions
MIN
TYP
MAX
MAX
IF = 25A
2.46
2.98
1.83
Volts
Forward Voltage
IF = 50A
VF
IF = 25A, TJ = 125°C
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
MIN
TYP
26
UNIT
Test Conditions
Reverse Recovery Time
trr
trr
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
ns
Reverse Recovery Time
Reverse Recovery Charge
-
350
IF = 40A, diF/dt = -200A/µs
VR = 800V, TC = 25°C
Qrr
IRRM
trr
-
-
-
-
-
570
4
nC
Amps
ns
Maximum Reverse Recovery Current
Reverse Recovery Time
-
-
430
2200
9
IF = 40A, diF/dt = -200A/µs
VR = 800V, TC = 125°C
Qrr
Reverse Recovery Charge
nC
Amps
ns
IRRM
trr
Maximum Reverse Recovery Current
Reverse Recovery Time
-
-
-
210
3400
29
IF = 40A, diF/dt = -1000A/µs
VR = 800V, TC = 125°C
Qrr
Reverse Recovery Charge
nC
IRRM
Maximum Reverse Recovery Current
Amps
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.9
0.7
0.5
0.3
Note:
t
1
t
2
t
1
t
/
2
Duty Factor D =
0.1
Peak T = P
x Z
+ T
θJC C
J
DM
SINGLE PULSE
10-3
0.05
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp(°C)
0.0442 °C/W
0.242 °C/W
0.324 °C/W
0.00222 J/°C
0.00586 J/°C
0.0596 J/°C
Power
(watts)
Case temperature(°C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
APT25GN120B2DQ2(G)
120
100
80
600
500
400
300
200
100
0
T
V
= 125°C
= 800V
J
R
80A
40A
T
= 175°C
J
20A
60
40
T
= 25°C
J
T
= 125°C
J
20
0
T
= -55°C
3
J
0
1
2
4
0
200
400
600
800 1000 1200
-di /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 27. Reverse Recovery Time vs. Current Rate of Change
V , ANODE-TO-CATHODE VOLTAGE (V)
F
F
Figure 26. Forward Current vs. Forward Voltage
5000
4500
4000
3500
3000
2500
2000
35
T
V
= 125°C
= 800V
T
V
= 125°C
= 800V
R
J
J
80A
R
30
25
20
15
10
5
80A
40A
40A
20A
1500
1000
500
0
20A
0
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
-di /dt, CURRENT RATE OF CHANGE (A/µs)
-di /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure 29. Reverse Recovery Current vs. Current Rate of Change
1.2
80
Q
rr
Duty cycle = 0.5
T
= 175°C
J
t
70
60
50
40
30
20
10
0
rr
1.0
t
rr
0.8
I
RRM
0.6
0.4
Q
rr
0.2
0.0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
Figure 31. Maximum Average Forward Current vs. CaseTemperature
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
Figure 30. Dynamic Parameters vs. Junction Temperature
200
150
100
50
0
1
10
100 200
V , REVERSE VOLTAGE (V)
R
Figure 32. Junction Capacitance vs. Reverse Voltage
TYPICAL PERFORMANCE CURVES
APT25GN120B2DQ2(G)
V
r
diF/dt Adjust
+18V
0V
APT10035LLL
D.U.T.
t
Q
/
30µH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 33. Diode Test Circuti
1
2
IF - Forward Conduction Current
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IRRM - Maximum Reverse Recovery Current.
Zero
3
4
0.25 I
RRM
t
- Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
3
rr
2
line through IRRM and 0.25 IRRM passes through zero.
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 34, Diode Reverse Recovery Waveform and Definitions
T-MAX™ (B2) Package Outline
e1
SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector
(Cathode)
Emitter
(Anode)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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