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AP4800M [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP4800M
型号： AP4800M
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
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AP4800M  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low On-Resistance  
BVDSS  
RDS(ON)  
ID  
25V  
18mΩ  
9A  
D
D
D
▼ Fast Switching  
D
▼ Simple Drive Requirement  
G
S
S
SO-8  
S
Description  
D
S
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
The SO-8 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
25  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
± 20  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
9
A
7
40  
A
A
PD@TA=25℃  
Total Power Dissipation  
2.5  
W
Linear Derating Factor  
0.02  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Thermal Resistance Junction-ambient3  
Value  
50  
Unit  
Rthj-amb  
Max.  
℃/W  
Data and specifications subject to change without notice  
20020430  
AP4800M  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
25  
-
-
0.037  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=9A  
VGS=4.5V, ID=7A  
V/℃  
mΩ  
RDS(ON)  
-
18  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
33  
3
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=15V, ID=10A  
VDS=25V, VGS=0V  
VDS=20V, VGS=0V  
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
20  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
j
1
Drain-Source Leakage Current (T=70oC)  
-
25  
j
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
V =  
GS  
-
± 20V  
±100  
ID=9A  
10.9  
1.9  
7.4  
7
-
-
-
-
-
-
Qgs  
Qgd  
td(on)  
tr  
VDS=15V  
VGS=5V  
VDS=15V  
ID=1A  
10.5  
20  
17.5  
390  
245  
100  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=6.2Ω,VGS=10V  
RD=15Ω  
VGS=0V  
-
-
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VDS=25V  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
VD=VG=0V , VS=1.3V  
Tj=25℃, IS=2.3A, VGS=0V  
Min. Typ. Max. Units  
A
V
IS  
Continuous Source Current ( Body Diode )  
-
-
-
-
1.92  
1.3  
VSD  
Forward On Voltage2  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse width <300us , duty cycle <2%.  
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.  
AP4800M  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
10V  
8.0V  
6.0V  
10V  
8.0V  
6.0V  
V GS =4.0V  
V GS =4.0V  
T C =150 o C  
T C =25 o C  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1.8  
34  
30  
26  
22  
18  
14  
10  
I D =9A  
I D =9A  
1.6  
1.4  
1.2  
1
T C =25 ℃  
V GS =10V  
Ω
Ω
Ω
Ω
0.8  
0.6  
2
3
4
5
6
7
8
9
10  
11  
V GS (V)  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
AP4800M  
10  
9
8
7
6
5
4
3
2
1
0
3
2.5  
2
1.5  
1
0.5  
0
0
50  
100  
150  
25  
50  
75  
100  
125  
150  
T c , Case Temperature ( o C)  
T c , Case Temperature ( o C)  
Fig 5. Maximum Drain Current v.s.  
Case Temperature  
Fig 6. Typical Power Dissipation  
1
100  
10  
Duty Factor = 0.5  
100us  
0.2  
0.1  
0.1  
1ms  
10ms  
100ms  
1s  
0.05  
1
0.02  
0.01  
PDM  
t
0.01  
T
Single Pulse  
0.1  
0.01  
10s  
Duty Factor = t/T  
Peak Tj = PDM x Rthja + Ta  
Rthja=125oC/W  
T C =25 o C  
DC  
Single Pulse  
0.001  
0.1  
1
10  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
V DS (V)  
t , Pulse Width (s)  
Fig 7. Maximum Safe Operating Area  
Fig 8. Effective Transient Thermal Impedance  
AP4800M  
f=1.0MHz  
16  
14  
12  
10  
8
10000  
1000  
100  
I D =9A  
DS =15V  
V
Ciss  
Coss  
Crss  
6
4
2
0
10  
0
5
10  
15  
20  
25  
30  
1
6
11  
16  
21  
26  
V DS (V)  
Q G , Total Gate Charge (nC)  
Fig 9. Gate Charge Characteristics  
Fig 10. Typical Capacitance Characteristics  
3
2
1
0
100  
10  
T j =150 o C  
T j =25 o C  
1
0.1  
-50  
0
50  
100  
150  
0.1  
0.3  
0.5  
0.7  
0.9  
1.1  
1.3  
1.5  
T j , Junction Temperature( o C)  
V SD (V)  
Fig 11. Forward Characteristic of  
Reverse Diode  
Fig 12. Gate Threshold Voltage v.s.  
Junction Temperature  
AP4800M  
VDS  
RD  
90%  
VDS  
TO THE  
OSCILLOSCOPE  
D
S
0.6 x RATED VDS  
RG  
G
10%  
VGS  
+
10V  
VGS  
-
td(off)  
td(on) tr  
tf  
Fig 13. Switching Time Circuit  
Fig 14. Switching Time Waveform  
VG  
5V  
VDS  
QG  
TO THE  
OSCILLOSCOPE  
D
S
0.6 x RATED VDS  
QGD  
QGS  
G
VGS  
+
1~ 3 mA  
IG  
-
ID  
Q
Charge  
Fig 15. Gate Charge Circuit  
Fig 16. Gate Charge Waveform  

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