ZXTDBM832 [ZETEX]
MPPS-TM Miniature Package Power Solutions DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR; MPPS -TM微型封装的电源解决方案双路20V NPN硅低饱和开关晶体管
| 型号： | ZXTDBM832 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | MPPS-TM Miniature Package Power Solutions DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR |
| 文件： | 总6页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTDBM832
MPPS™ Miniature Package Power Solutions
DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
CEO
V
=20V; R
= 47m ; I = 4.5A
SAT C
DESCRIPTION
Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline,
these new 4th generation low saturation dual transistors offer extremely low on
state losses making them ideal for use in DC-DC circuits and various driving
and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packges
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
3mm x 2mm (Dual die) MLP
C1
C2
Reduced component count
FEATURES
•
Low Equivalent On Resistance
B2
B1
•
Extremely Low Saturation Voltage (150mV @1A)
•
•
•
h
characterised up to 6A
FE
I =4.5A Continuous Collector Current
C
E2
E1
3mm x 2mm MLP
APPLICATIONS
•
•
•
•
DC - DC Converters
Charging circuits
Power switches
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXTDCM832TA
ZXTDCM832TC
7
8mm
8mm
3000
13
10000
3mm x 2mm MLP
underside view
DEVICE MARKING
DBB
ISSUE 1 - JUNE 2002
1
ZXTDBM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
40
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
CBO
CEO
EBO
20
V
7.5
12
V
Peak Pulse Current
I
I
I
I
A
CM
Continuous Collector Current (a)(f)
Continuous Collector Current (b)(f)
Base Current
4.5
5
A
C
C
B
A
1000
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
P
P
P
P
P
P
1.5
12
W
D
D
D
D
D
D
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
1.13
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
3
24
W
mW/°C
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
83.3
51
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
R
R
R
R
R
R
θJA
θJA
θJA
θJA
θJA
θJA
125
111
73.5
41.7
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
ISSUE 1 - JUNE 2002
2
ZXTDBM832
TYPICAL CHARACTERISTICS
3.5
3.0
2.5
2.0
1.5
1.0
V
CE(SAT)
T
amb=25°C
2oz Cu
10
1
Limited
Note (e)(g)
2oz Cu
Note (a)(f)
DC
1oz Cu
Note (d)(g)
1s
100ms
0.1
10ms
1ms
Note (a)(f)
0.01 Single Pulse, Tamb=25°C
0.1
100us
10
1oz Cu
0.5
0.0
Note (d)(f)
1
0
25
50
75
100 125 150
V
Collector-Emitter Voltage (V)
Temperature (°C)
CE
Derating Curve
Safe Operating Area
225
200
175
150
125
100
75
Note (a)(f)
80
1oz copper
Note (f)
1oz copper
Note (g)
60
40
20
0
D=0.5
D=0.2
2oz copper
Note (f)
Single Pulse
D=0.05
D=0.1
50
2oz copper
Note (g)
25
0
100µ 1m 10m 100m
1
10 100 1k
0.1
1
10
100
Pulse Width (s)
BoardCuArea(sqcm)
Transient Thermal Impedance
Thermal Resistance v Board Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2oz copper
Note (g)
T
T
amb=25°C
jmax=150°C
Continuous
2oz copper
Note (f)
1oz copper
Note (g)
1oz copper
Note (f)
0.1
1
10
100
BoardCuArea(sqcm)
Power Dissipation v Board Area
ISSUE 1 - JUNE 2002
3
ZXTDBM832
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
V
V
40
100
V
I
=100A
(BR)CBO
C
Collector-Emitter Breakdown
Voltage
20
27
V
I
=10mA*
(BR)CEO
C
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
7.5
8.2
V
I =100A
E
(BR)EBO
CBO
I
I
I
25
25
nA
nA
nA
mV
mV
mV
mV
mV
V
V
V
V
=32V
=6V
CB
Emitter Cut-Off Current
EBO
EB
Collector Emitter Cut-Off Current
25
=16V
CES
CES
Collector-Emitter Saturation
Voltage
V
8
15
I
I
I
I
I
I
I
=0.1A, I =10mA*
B
CE(sat)
C
C
C
C
C
C
C
90
150
135
250
270
1.05
0.95
=1A, I =10mA*
B
115
190
210
0.98
0.88
=2A, I =50mA*
B
=3A, I =100mA*
B
=4.5A, I =125mA*
B
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
=4.5A, I =125mA*
B
BE(sat)
BE(on)
FE
V
=4.5A, V =2V*
CE
Static Forward Current Transfer
Ratio
200
300
200
100
400
450
360
180
I
I
I
I
=10mA, V =2V*
CE
C
C
C
C
=0.2A, V =2V*
CE
=2A, V =2V*
CE
=6A, V =2V*
CE
Transition Frequency
f
100
140
MHz
I
=50mA, V =10V
CE
T
C
f=100MHz
Output Capacitance
Turn-On Time
C
23
30
pF
ns
ns
V
V
I
=10V, f=1MHz
obo
(on)
(off)
CB
CC
t
t
170
400
=10V, I =3A
C
=I =10mA
Turn-Off Time
B1 B2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 1 - JUNE 2002
4
ZXTDBM832
TYPICAL CHARACTERISTICS
0.25
IC/IB=50
0.20
Tamb=25°C
100m
10m
1m
100°C
25°C
0.15
0.10
0.05
0.00
IC/IB=100
IC/IB=50
-55°C
IC/IB=10
IC10mCollector Current 1(A)
IC10mCollector Current 1(A)
1m
100m
10
1m
100m
10
VCE(SAT) vIC
VCE(SAT) vIC
630
540
450
360
270
180
90
V =2V
IC/IB=50
CE
1.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100°C
25°C
0.8
0.6
0.4
-55°C
25°C
-55°C
100°C
100m
0
IC Collector Current (A) 10
IC10mCollector Current 1(A)
1m
10m
100m
1
1m
10
h vIC
VBE(SAT) vIC
FE
V =2V
1.0
0.8
0.6
0.4
CE
-55°C
25°C
100°C
1m
100m
10
IC10mCollector Current 1(A)
VBE(ON) vIC
ISSUE 1 - JUNE 2002
5
ZXTDBM832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
MIN. MAX.
0.65 REF
2.00 BSC
INCHES
MIN. MAX.
DIM
DIM
MIN.
0.80
0.00
0.65
0.15
0.24
0.17
MAX.
1.00
0.05
0.75
0.25
0.34
0.30
MIN.
MAX.
0.039
A
0.031
0.00
e
E
0.0256 BSC
0.0787 BSC
A1
A2
A3
b
0.002
0.0255
0.006
0.009
0.0066
0.0295
0.0098
0.013
E2
E4
L
0.43
0.63
0.36
0.017
0.0249
0.014
0.16
0.20
0.006
0.0078
0.00
0.45
0.0157
0.005
b1
D
0.0118
L2
r
0.125
3.00 BSC
0.118 BSC
0.075 BSC
0.0029 BSC
D2
D3
0.82
1.01
1.02
1.21
0.032
0.040
⍜
0Њ
12Њ
0Њ
12Њ
0.0397
0.0476
© Zetex plc 2002
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Zetex plc
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Zetex Inc
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For the latest product information, log on to www.zetex.com
ISSUE 1 - JUNE 2002
6
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