ZXMS6003TA [ZETEX]

Transistor;
ZXMS6003TA
型号: ZXMS6003TA
厂家: ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述:

Transistor

文件: 总10页 (文件大小:500K)
中文:  中文翻译
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ZXMS6003G  
60V N-channel self protected enhancement mode  
IntelliFETTM MOSFET with programmable current limit  
Summary  
Continuous drain source voltage  
On-state resistance  
V
= 60V  
DS  
500m  
1.4A  
Nominal load current (V = 5V)  
IN  
Clamping energy  
550mJ  
Description  
Self protected low side MOSFET. Monolithic  
over temperature, over current, over voltage  
(active clamp) and ESD protected logic level  
functionality. Intended as a general purpose  
S
Status  
IN  
D
switch,  
with  
status  
indication  
and  
Rprog  
programmable current limit.  
Top view  
Note: Rprog must be connected between the  
Status and IN pins  
Features  
Current limit programmable via external  
resistor  
Over-current protection  
Input Protection (ESD)  
Status pin (analog status indication)  
Short circuit protection with auto restart  
Over voltage protection (active clamp)  
Thermal shutdown with auto restart  
Load dump protection (actively protects  
load)  
Logic Level Input  
High continuous current rating  
Ordering information  
Device  
Part mark Reel size Tape width Quantity  
(inches)  
(mm)  
per reel  
ZXMS6003TA  
ZXMS6003  
7
12  
1,000  
Issue 1 - February 2007  
© Zetex Semiconductors plc 2007  
1
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ZXMS6003G  
Functional block diagram  
Status /  
current limit  
D
Over voltage  
protection  
IN  
Over current  
protection  
Human body  
Logic  
ESD protection  
Over temperature  
protection  
S
Applications and information  
Especially suited for loads with a high in-rush current such as lamps and motors.  
All types of resistive, inductive and capacitive loads in switching applications.  
C compatible power switch for 12V and 24V DC applications.  
Automotive rated.  
Replaces electromechanical relays and discrete circuits.  
Linear mode capability - the current-limiting protection circuitry is designed to de-activate at  
low V , in order not to compromise the load current during normal operation. The design  
DS  
max. DC operating current is therefore determined by the thermal capability of the package/  
board combination, rather than by the protection circuitry.  
Note: This does not compromise the product's ability to self-protect during short-circuit load  
conditions.  
Status pin voltage reflects the gate drive being applied internally to the power MOSFET.  
With V = 5V:  
IN  
Status voltage ~ 5V indicates normal operation.  
Status voltage ~ (2-3)V indicates that the device is in current-limiting mode.  
Status voltage < 1V indicates that the device is in thermal shutdown.  
The current limit is programmable via an external resistor Rprog connected between Status  
and IN pins:  
Rprog vs Current Limit  
10  
1
Vin=5V  
Vin=10V  
0.1  
0.01  
0
20  
40  
60  
80  
100  
Rprog (KΩ)  
Issue 1 - February 2007  
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ZXMS6003G  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Continuous drain-source voltage  
V
60  
V
DS  
(a)  
(a)  
V
V
36  
20  
V
V
Drain-source voltage for short circuit protection V =5V  
DS(SC)  
DS(SC)  
IN  
Drain-source voltage for short circuit protection V =10V  
IN  
Continuous input voltage  
Peak input voltage  
V
V
-0.2 ... +10  
-0.2 ... +20  
-40 to +150  
-55 to +150  
2.5  
V
V
IN  
IN  
Operating temperature range  
Storage temperature range  
(a)  
T ,  
°C  
°C  
W
j
T
stg  
P
Power dissipation @ T  
=25°C  
D
amb  
(b)  
I
I
1.6  
1.4  
A
A
Continuous drain current @ V =10V; T  
=25°C  
D
IN  
amb  
(b)  
Continuous drain current @ V =5V; T  
=25°C  
D
IN  
amb  
(b)  
I
I
3
8
A
A
Continuous source current (body diode)  
S
(c)  
Pulsed source current (body diode)  
S
Unclamped single pulse inductive energy  
Load dump protection  
E
550  
80  
mJ  
V
AS  
LoadDump  
V
Electrostatic discharge (human body model)  
V
4000  
V
ESD  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
E
40/150/56  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
Junction to ambient  
R
50  
°C/W  
JA  
JA  
Junction to ambient  
R
28  
°C/W  
NOTES:  
(a) For ID(LIM) < 1.2A (see safe operating area curve).  
(b)For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight  
copper.  
(c) For a device surface mounted on FR4 board and measured at t<=10s.  
Issue 1 - February 2007  
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ZXMS6003G  
Characteristics  
Issue 1 - February 2007  
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ZXMS6003G  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit Conditions  
Static Characteristics  
Drain-source clamp voltage  
V
60  
70  
0.1  
3
75  
3
V
A  
A  
V
I =10mA  
D
DS(AZ)  
Off state drain current  
Off state drain current  
I
I
V
V
V
=12V, V =0V  
IN  
DSS  
DS  
DS  
DS  
15  
=32V, V =0V  
DSS  
IN  
(*)  
V
1
2.1  
0.7  
1.5  
4
=V , I =1mA  
Input threshold voltage  
IN(th)  
GS  
D
Input current  
Input current  
Input current  
I
I
I
1.2  
2.7  
7
mA V =+5V  
IN  
IN  
mA V =+7V  
IN  
IN  
IN  
mA V =+10V  
IN  
Static drain-source on-state  
resistance  
R
R
I
520  
675  
mV =5V, I =0.2A  
IN D  
DS(on)  
Static drain-source on-state  
resistance  
385  
0.3  
500  
0.4  
mV =10V, I =0.5A  
IN D  
DS(on)  
(†)  
0.2  
0.7  
A
A
V =5V, Vds=10V  
Rprog=20k  
Current limit  
D(LIM)  
IN  
(†)  
I
0.9  
1.2  
V =10V, Vds=10V,  
Current limit  
D(LIM)  
IN  
Rprog=20k  
Dynamic characteristics  
Turn-on time (V to 90% I )  
t
t
3.0  
13  
8
10  
20  
20  
10  
s  
s  
Rprog=20k, R =22,  
L
IN  
D
on  
V =0 to 10V,  
IN  
V
=12V  
DD  
Turn-off time (V to 90% I )  
Rprog=20k, R =22,  
L
IN  
D
off  
V =10V to 0V,  
IN  
V
=12V  
DD  
Slew rate on (70 to 50% V ) -dV /dt  
V/s Rprog=20k, R =22,  
L
DD  
DS  
on  
V =0 to 10V,  
IN  
V
=12V  
DD  
Slew rate off (50 to 70% V ) DV /dt  
3.2  
V/s Rprog=20k, R =22,  
L
DD  
DS  
on  
V =10V to 0V,  
IN  
V
=12V  
DD  
NOTES:  
(*) Protection features may operate outside spec for VIN<4.5V  
(†) The drain current is limited to a reduced value when Vds exceeds a safe level.  
Issue 1 - February 2007  
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ZXMS6003G  
Electrical characteristics (at T  
= 25°C unless otherwise stated) (cont.)  
amb  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit Conditions  
(‡)  
Protection functions  
Required input voltage for  
over temperature protection  
V
4.5  
V
PROT  
Thermal overload trip  
temperature  
T
150  
175  
1
°C  
JT  
Thermal hysteresis  
°C  
Unclamped single pulse  
inductive energy  
E
E
550  
200  
mJ  
I
V
)=0.7A,  
D(ISO  
AS  
=32V  
DD  
T =25°C  
j
Unclamped single pulse  
inductive energy  
mJ  
I
V
)=0.7A,  
D(ISO  
AS  
=32V  
DD  
T =150°C  
j
Status flag  
Over temperature active  
1
V
V >4V  
IN  
Over current active  
pin tracks internal gate  
voltage  
Inverse diode  
Source drain voltage  
V
1
V
V =0V, -I =1.4A  
IN D  
SD  
NOTES:  
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the  
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed  
for continuous, repetitive operation.  
Issue 1 - February 2007  
© Zetex Semiconductors plc 2007  
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ZXMS6003G  
Typical characteristics  
Issue 1 - February 2007  
© Zetex Semiconductors plc 2007  
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ZXMS6003G  
Intentionally left blank  
Issue 1 - February 2007  
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ZXMS6003G  
Package outline - SOT223  
DIM  
Millimeters  
Min Max  
Inches  
Min  
DIM  
Millimeters  
Min Max  
Inches  
Max  
0.071  
0.004  
0.033  
0.122  
0.013  
0.264  
Min  
0.0905 BSC  
0.181 BSC  
Max  
A
A1  
b
-
1.80  
0.10  
0.84  
3.10  
0.33  
6.70  
-
e
e1  
E
2.30 BSC  
4.60 BSC  
0.02  
0.66  
2.90  
0.23  
6.30  
0.0008  
0.026  
0.114  
0.009  
0.248  
6.70  
7.30  
0.264  
0.287  
b2  
C
E1  
L
3.30  
0.90  
-
3.70  
0.130  
0.355  
-
0.146  
-
-
-
-
D
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Issue 1 - February 2007  
© Zetex Semiconductors plc 2007  
9
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ZXMS6003G  
Definitions  
Product change  
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or  
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.  
Applications disclaimer  
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for  
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is  
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights  
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,  
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,  
opportunity or consequential loss in the use of these circuit applications, under any circumstances.  
Life support  
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body  
or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labelling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or to affect its safety or effectiveness.  
Reproduction  
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the  
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a  
representation relating to the products or services concerned.  
Terms and Conditions  
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two  
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  
Quality of product  
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our  
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork  
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  
Devices suspected of being affected should be replaced.  
Green compliance  
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding  
regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to  
reduce the use of hazardous substances and/or emissions.  
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with  
WEEE and ELV directives.  
Product status key:  
“Preview”  
“Active”  
Future device intended for production at some point. Samples may be available  
Product status recommended for new designs  
“Last time buy (LTB)”  
Device will be discontinued and last time buy period and delivery is in effect  
“Not recommended for new designs” Device is still in production to support existing designs and production  
“Obsolete”  
Production has been discontinued  
Datasheet status key:  
“Draft version”  
This term denotes a very early datasheet version and contains highly provisional information, which  
may change in any manner without notice.  
“Provisional version”  
“Issue”  
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  
However, changes to the test conditions and specifications may occur, at any time and without notice.  
This term denotes an issued datasheet containing finalized specifications. However, changes to  
specifications may occur, at any time and without notice.  
Zetex sales offices  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
© 2007 Published by Zetex Semiconductors plc  
Issue 1 - February 2007  
© Zetex Semiconductors plc 2007  
10  
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