ZXMP2120G4TC [ZETEX]
200V P-CHANNEL ENHANCEMENT MODE MOSFET; 200V P沟道增强型MOSFET
| 型号： | ZXMP2120G4TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 200V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：442K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMP2120G4
200V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA
DESCRIPTION
This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
A SOT23-5 version is also available (ZXMP2120E5).
SOT223
FEATURES
• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• SOT223 package variant engineered to increase spacing between
high voltage pins.
APPLICATIONS
• Active clamping of primary side MOSFETs in 48 volt DC-DC converters
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
N/C
ZXMP2120G4TA
ZXMP2120G4TC
7
12mm embossed
12mm embossed
1,000 units
4,000 units
13
PINOUT - TOP VIEW
DEVICE MARKING
ZXMP
2120
ISSUE 1 - DECEMBER 2005
1
ZXMP2120G4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
-200
Ϯ20
UNIT
V
Drain-Source Voltage
Gate Source Voltage
V
V
DS
GS
V
(a)
Continuous Drain Current (V =10V; T
GS
=25°C)
I
I
-200
mA
A
amb
D
(c)
Pulsed Drain Current
-1.2
DM
SM
(c)
-1.2
A
Pulsed Source Current (Body Diode)
(a)
I
Power Dissipation at T
Linear derating factor
=25°C
P
2.0
1.6
W
amb
tot
mW/°C
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
62.5
32
UNIT
°C/W
°C/W
(a)
Junction to Ambient
R
R
θJA
θJA
(b)
Junction to Ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - DECEMBER 2005
2
ZXMP2120G4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS
Drain-Source
Breakdown Voltage
BV
-200
V
I =-1mA, V =0V
DSS
D
GS
Gate-Source Threshold
Voltage
V
-1.5
-3.5
20
V
I =-1mA, V = V
DS GS
D
GS(th)
Gate-Body Leakage
I
I
nA
V
= Ϯ20V, V =0V
GS DS
GSS
DSS
Zero Gate Voltage Drain
Current
-10
-100
V
V
=-200 V, V =0V
GS
µA
µA
DS
DS
=-160 V, V =0V,
GS
(2)
T=125°C
(1)
On-State Drain Current
I
-300
50
mA
V
V
=-25 V, V =-10V
GS
D(on)
DS
GS
Static Drain-Source On-State
R
25
=-10V, I =-150mA
D
Ω
DS(on)
(1)
Resistance
(1)(2)
Forward Transconductance
g
C
C
mS
pF
V
V
=-25V, I =-150mA
D
fs
DS
DS
(2)
Input Capacitance
100
25
iss
oss
Common Source Output
pF
=-25V, V =0V, f=1MHz
GS
(2)
Capacitance
(2)
Reverse Transfer Capacitance
C
7
pF
ns
ns
ns
ns
rss
(2)(3)
Turn-On Delay Time
t
t
t
t
7
d(on)
(2)(3)
Rise Time
15
12
15
V
-25V, I =-150mA
D
r
DD
(2)(3)
Turn-Off Delay Time
d(off)
f
(2)(3)
Fall Time
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ®2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ISSUE 1 - DECEMBER 2005
3
ZXMP2120G4
TYPICAL CHARACTERISTICS
ISSUE 1 - DECEMBER 2005
4
ZXMP2120G4
CHARACTERISTICS
ISSUE 1 - DECEMBER 2005
5
ZXMP2120G4
PACKAGE OUTLINE
PAD LAYOUT DETAILS
3.8
0.15
2.0
0.079
6.3
0.248
2.0
0.079
mm
inches
1.5
0.059
2.3
0.091
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
Millimeters
Min Max
2.30 BSC
4.60 BSC
Inches
Min Max
DIM
DIM
Min
-
Max
Min
Max
0.071
0.004
0.033
0.122
0.013
0.264
A
A1
b
1.80
0.10
0.84
3.10
0.33
6.70
-
e
e1
E
0.0905 BSC
0.181 BSC
0.02
0.66
2.90
0.23
6.30
0.0008
0.026
0.114
0.009
0.248
6.70
7.30
0.264
0.287
b2
C
E1
L
3.30
0.90
-
3.70
0.130
0.355
-
0.146
-
-
-
-
D
-
© Zetex Semiconductors plc 2005
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ISSUE 1 - DECEMBER 2005
6
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