ZXMP3A13F [TYSEMI]
30V P-CHANNEL ENHANCEMENT MODE MOSFET Fast switching speed; 30V P沟道增强型MOSFET的开关速度快
| 型号： | ZXMP3A13F |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 30V P-CHANNEL ENHANCEMENT MODE MOSFET Fast switching speed |
| 文件： | 总3页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
ZXMP3A13F
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
V
= -30V; R
= 0.21 I = -1.6A
DS(ON) D
DESCRIPTION
This new generation of trench MOSFETs from TY utilizes a unique structurethat
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
SOT23
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
•
•
•
•
DC - DC converters
Power management functions
Disconnect switches
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A13FTA
ZXMP3A13FTC
7”
8mm
8mm
3000 units
13”
10000 units
DEVICE MARKING
Top View
•
313
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Product specification
ZXMP3A13F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate Source Voltage
V
V
-30
20
V
V
A
DSS
GS
Continuous Drain Current V =10V; T =25°C (b)
I
-1.6
-1.3
-1.4
GS
A
A
A
D
V
V
=10V; T =70°C (b)
GS
=10V; T =25°C (a)
GS
Pulsed Drain Current (c)
I
I
I
-6
-1.2
-6
A
A
A
DM
S
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
SM
Power Dissipation at T =25°C (a)
A
P
625
5
mW
D
D
Linear Derating Factor
mW/°C
Power Dissipation at T =25°C (b)
A
Linear Derating Factor
P
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
200
UNIT
°C/W
°C/W
Junction to ambient (a)
Junction to ambient (b)
R
R
θJA
θJA
155
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
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Product specification
ZXMP3A13F
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
-30
V
A
nA
V
I =-250A, V =0V
D GS
(BR)DSS
I
I
-0.5
100
V
=-30V, V =0V
GS
DSS
DS
GS
V
=Ϯ20V, V =0V
DS
GSS
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
V
R
-1.0
I =-250A, V = V
DS GS
D
GS(th)
DS(on)
0.210
0.330
V
V
=-10V, I =-1.4A
⍀
⍀
GS
GS
D
=-4.5V, I =-1.1A
D
Forward Transconductance (1)(3)
DYNAMIC (3)
g
2.4
S
V
=-15V,I =-1.4A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
206
59.3
49.2
pF
pF
pF
iss
V
=-15V, V =0V,
DS
GS
oss
rss
f=1MHz
t
t
t
t
1.5
3.0
ns
ns
ns
ns
nC
d(on)
r
V
=-15V, I =-1A
D
DD
G
Turn-Off Delay Time
Fall Time
11.1
7.6
R =6.0⍀, V =-10V
d(off)
f
GS
Gate Charge
Q
3.8
V
=-15V,V =-5V,
DS GS
g
ID=-1.4A
Total Gate Charge
Q
Q
Q
6.4
0.69
2.0
nC
nC
nC
g
V
=-15V,V =-10V,
GS
DS
Gate-Source Charge
Gate-Drain Charge
gs
gd
ID=-1.4A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
-0.85 -0.95
V
T =25°C, I =-1.1A,
GS
SD
J
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t
15.6
9.6
ns
T =25°C, I =-0.95A,
J F
di/dt= 100A/μs
rr
Q
nC
rr
NOTES:
(1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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