ZXMP3A13FTC [ZETEX]
30V P-CHANNEL ENHANCEMENT MODE MOSFET; 30V P沟道增强型MOSFET
| 型号： | ZXMP3A13FTC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMP3A13F
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
V
= -30V; R
= 0.21
I = -1.6A
D
DS(ON)
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
com bines the benefits of low on-resistance with fast switching speed. This m akes
them ideal for high efficiency, low voltage, power m anagem ent applications.
SOT23
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
•
•
•
•
DC - DC converters
Power m anagem ent functions
Disconnect switches
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A13FTA
ZXMP3A13FTC
7”
8m m
8m m
3000 units
13”
10000 units
DEVICE MARKING
Top View
•
313
PROVISIONAL ISSUE C - J ULY 2004
1
ZXMP3A13F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
-30
UNIT
V
Dra in -S o u rce Vo lta g e
Ga te S o u rce Vo lta g e
V
DS S
GS
V
20
V
Co n tin u o u s Dra in Cu rre n t V =10V; T =25°C (b )
I
-1.6
-1.3
-1.4
A
GS
A
D
V
=10V; T =70°C (b )
GS
A
V
=10V; T =25°C (a )
GS
A
Pu ls e d Dra in Cu rre n t (c)
I
I
I
-6
-1.2
-6
A
A
A
DM
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e ) (b )
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e ) (c)
S
S M
Po w e r Dis s ip a tio n a t T =25°C (a )
A
Lin e a r De ra tin g Fa cto r
P
625
5
m W
m W/°C
D
D
Po w e r Dis s ip a tio n a t T =25°C (b )
A
Lin e a r De ra tin g Fa cto r
P
806
6.4
m W
m W/°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
T :T
-55 to +150
°C
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
200
UNIT
°C/W
°C/W
J u n ctio n to Am b ie n t (a )
J u n ctio n to Am b ie n t (b )
R
R
θJ A
θJ A
155
NOTES
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface m ounted on FR4 PCB m easured at tр5 secs.
(c) Repetitive rating 25m m x 25m m FR4 PCB, D = 0.05, pulse width 10s - pulse width lim ited by m axim um junction tem perature. Refer to
Transient Therm al Im pedance graph.
PROVISIONAL ISSUE C - J ULY 2004
2
ZXMP3A13F
CHARACTERISTICS
0.7
0.6
0.5
0.4
0.3
0.2
10
1
RDS(on)
Limited
DC
1s
100m
10m
100ms
1
10ms
1ms
Single Pulse
amb=25°C
0.1
0.0
100µs
10
T
100m
0
20 40 60 80 100 120 140 160
-V Drain-Source Voltage (V)
Temperature (°C)
DS
Safe Operating Area
Derating Curve
T
amb=25°C
200
150
100
50
Single Pulse
Tamb=25°C
10
1
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
1
0
100µ 1m 10m 100m
10 100 1k
100µ 1m 10m 100m
1
10 100 1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PROVISIONAL ISSUE C - J ULY 2004
3
ZXMP3A13F
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
-30
V
A
nA
V
I =-250A, V =0V
D GS
(BR)DS S
I
I
-0.5
100
V
=-30V, V =0V
GS
DS S
DS
GS
V
=Ϯ20V, V =0V
DS
GS S
Ga te -S o u rce Th re s h o ld Vo lta g e
Static Drain-Source On-State Resistance (1)
V
R
-1.0
I =-250A, V = V
DS GS
D
GS (th )
0.210
0.330
V
V
=-10V, I =-1.4A
⍀
⍀
DS (o n )
GS
GS
D
=-4.5V, I =-1.1A
D
Fo rw a rd Tra n s co n d u cta n ce (1)(3)
DYNAMIC (3)
g
2.48
S
V
=-15V,I =-1.4A
D
fs
DS
In p u t Ca p a cita n ce
Ou tp u t Ca p a cita n ce
Re ve rs e Tra n s fe r Ca p a cita n ce
S WITCHING(2) (3)
Tu rn -On De la y Tim e
Ris e Tim e
C
C
C
204
39.8
25.8
pF
pF
pF
is s
V
=-15V, V =0V,
DS
GS
o s s
rs s
f=1MHz
t
t
t
t
1.5
2.8
ns
ns
ns
ns
nC
d (o n )
r
V
R
=-15V, I =-1A
D
DD
Tu rn -Off De la y Tim e
Fa ll Tim e
11.3
7.5
=6.0⍀, V =-10V
d (o ff)
f
G
GS
Ga te Ch a rg e
Q
2.58
V
=-15V,V =-5V,
g
DS GS
ID=-1.4A
To ta l Ga te Ch a rg e
Q
Q
Q
5.15
0.65
0.92
nC
nC
nC
g
V
=-15V,V =-10V,
DS
GS
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
g s
g d
ID=-1.4A
S OURCE-DRAIN DIODE
Dio d e Fo rw a rd Vo lta g e (1)
V
-0.85 -0.95
V
T =25°C, I =-1.1A,
J S
S D
V
=0V
GS
Re ve rs e Re co ve ry Tim e (3)
Re ve rs e Re co ve ry Ch a rg e (3)
t
18.6
14.8
ns
T =25°C, I =-0.95A,
J F
d i/d t= 100A/µs
rr
Q
nC
rr
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE C - J ULY 2004
4
ZXMP3A13F
TYPICAL CHARACTERISTICS
10V
T = 150°C
T= 25°C
10V
5V
10
1
10
5V
4V
4V
3.5V
3V
3.5V
3V
2.5V
1
2.5V
-V
GS
2V
2V
0.1
0.01
0.1
-V
GS
1.5V
0.01
1
10
1
10
0.-1V Drain-Source Voltage (V)
0.-1V Drain-Source Voltage (V)
DS
DS
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
V
= -10V
IDG=S -1.4A
RDS(on)
T = 150°C
1
T= 25°C
V
GS(th)
V
= V
IDG=S -250uA
DS
0.1
-VDS = 10V
1
2
3
4
5
-50
0
50
100
150
-V Gate-Source Voltage (V)
Tj Junction Temperature (°C)
GS
Typical Transfer Characteristics
Normalised Curves v Temperature
2V
10
T= 25°C
100
10
1
-V
GS
2.5V
T = 150°C
1
0.1
3V
3.5V
4V
T= 25°C
1.0
5V
10V
0.01
0.1
0.2
0.4
0.8
1.4
-V So0u.6rce-Drain Voltage1(.V2 )
0.1
1
10
-I Drain Current (A)
SD
On-ResDistance v Drain Current
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE C - J ULY 2004
5
ZXMP3A13F
TYPICAL CHARACTERISTICS
300
250
10
V
GS = 0V
ID = -1.4A
f = 1MHz
8
6
4
2
0
200
C
ISS
150
100
50
COSS
C
RSS
VDS = -15V
0
0.1
1
10
0
2
4
6
-V - Drain - Source Voltage (V)
Q - Charge (nC)
DS
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
PROVISIONAL ISSUE C - J ULY 2004
6
ZXMP3A13F
PACKAGE OUTLINE
PAD LAYOUT
PACKAGE DIMENSIONS
Millim eters
DIM
Inches
Min
Millim eters
Inches
Max
DIM
Min
2.67
1.20
ᎏ
Max
3.05
1.40
1.10
0.53
0.15
Max
0.120
0.055
0.043
0.021
Min
0.33
0.01
2.10
0.45
Max
0.51
0.10
2.50
0.64
Max
0.020
0.004
0.0985
0.025
A
B
C
D
F
0.105
0.047
ᎏ
H
K
0.013
0.0004
0.083
0.018
L
0.37
0.085
0.015
M
N
0.0034 0.0059
0.075 NOM
0.95 NOM
0.0375 NOM
G
1.90 NOM
ᎏ
ᎏ
ᎏ
© Zetex Sem iconductors plc 2004
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PROVISIONAL ISSUE C - J ULY 2004
7
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