ZXMP2120E5 [ZETEX]
200V P-CHANNEL ENHANCEMENT MODE MOSFET; 200V P沟道增强型MOSFET
| 型号： | ZXMP2120E5 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 200V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMP2120E5
200V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA
DESCRIPTION
This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
A 4 pin SOT223 version is also available (ZXMP2120G4).
SOT23-5
FEATURES
• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• SOT23-5 package variant engineered to increase spacing between
high voltage pins.
APPLICATIONS
• Active clamping of primary side MOSFETs in 48 volt DC-DC converters
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
S
N/C
D
ZXMP2120E5TA
7
8mm embossed
3,000 units
N/C
G
DEVICE MARKING
• P120
PINOUT - TOP VIEW
ISSUE 2 - SEPTEMBER 2006
1
ZXMP2120E5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
-200
V
DSS
Drain-Source Voltage
Gate Source Voltage
V
20
V
GS
(a)
Continuous Drain Current (V =10V; T
GS
=25°C)
I
I
-122
-0.7
mA
A
amb
D
DM
Pulsed Drain Current (c)
(c)
-0.7
A
Pulsed Source Current (Body Diode)
I
SM
(a)
Power Dissipation at T
Linear Derating Factor
=25°C
P
0.75
6
W
mW/°C
°C
amb
D
-55 to +150
Operating and Storage Temperature Range
T :T
j stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
(a)
Junction to Ambient
R
167
°C/W
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 2 - SEPTEMBER 2006
2
ZXMP2120E5
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN.
TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
V
V
-200
-1.5
V
I =-1mA, V =0V
D GS
(BR)DSS
GS(th)
GSS
-3.5
20
V
I =-1mA, V = V
DS GS
D
I
I
nA
V
= Ϯ20V, V =0V
GS DS
Zero Gate Voltage Drain Current
-10
-100
A
µA
V
V
=-200 V, V =0
GS
DSS
DS
DS
=-160 V, V =0V,
GS
(2)
T=125°C
(1)
On-State Drain Current
I
-300
mA
Ω
V
V
V
=-25 V, V =-10V
GS
D(on)
DS
GS
DS
(1)
Static Drain-Source On-State Resistance
R
28
=-10V, I =-150mA
D
DS(on)
fs
(1)(2)
Forward Transconductance
g
50
mS
=-25V,I =-150mA
D
DYNAMIC
(2)
Input Capacitance
C
C
C
100
25
7
pF
pF
pF
iss
V
=-25 V, V =0V,
GS
DS
(2)
Output Capacitance
f=1MHz
oss
rss
(2)
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
t
t
t
t
7
ns
ns
ns
ns
d(on)
V
=-25V, I =-150mA
D
DD
(2)(3)
Rise Time
15
12
15
r
(2) (3)
Turn-Off Delay Time
d(off)
f
(2)(3)
Fall Time
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.
ISSUE 2 - SEPTEMBER 2006
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ZXMP2120E5
TYPICAL CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2006
4
ZXMP2120E5
CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2006
5
ZXMP2120E5
PACKAGE OUTLINE
PAD LAYOUT DETAILS
0.95
0.375
1.06
0.042
2.2
0.087
mm
inches
0.65
0.025
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
MIN.
Millimeters
Inches
DIM
DIM
MIN.
MAX.
1.45
0.15
1.30
0.50
0.26
MAX.
0.0570
0.0059
0.0511
0.0196
0.0102
0.1220
MIN.
MAX.
3.20
MIN.
MAX.
0.1181
0.0708
A
0.90
-
0.0354
-
E
2.20
1.30
0.0866
0.0511
A1
A2
b
E1
e
1.80
0.90
0.20
0.09
0.0354
0.0078
0.0035
0.1062
0.95 REF
1.90 REF
0.0374 REF
0.0748 REF
e1
L
C
0.10
0°
0.60
30°
0.0039
0°
0.0236
30°
D
2.70
3.10
a
© Zetex Semiconductors plc 2006
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ISSUE 2 - SEPTEMBER 2006
6
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