BSS84TC [ZETEX]
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN;
| 型号： | BSS84TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总1页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
BSS84
ISSUE 2 SEPTEMBER 1995
✪
PARTMARKING DETAIL
SP
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
-50
UNIT
V
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
ID
-130
mA
mA
V
IDM
-520
Gate-Source Voltage Peak
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VGS
±20
PTOT
tj:tstg
360
mW
°C
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
VGS(th)
IDSS
-50
V
VGS=0V, ID=0.25mA
Gate-Source
Threashold Voltage
-0.8
-1.5
-2.0
V
VDS=VGS , ID=-1mA
Zero gate Voltage
Drain Current
-1
-2
-15
-60
T =25 °C
T =125 °C
µA
µA
V
=-50V, V =0V(2)
°
Tj=25 C
V
-100
-10
=-25V, V =0V
Gate-Source Leakage
Current
IGSS
-1
nA
Ω
VGS = ±20V
VDS=0V
Drain Source On-State RDS(on)
Resistance (1)
6
10
VGS=-5V
ID=-100mA
Forward
Transconductance (1)
(2)
gfs
0.05
0.07
S
VDS=-25V
ID=-100mA
Input Capacitance (2)
Output Capacitance
Ciss
Coss
Crss
40
15
6
VGS=0V
VDS=-25V
f=1MHz
pF
ns
Reverse Transfer
Capacitance (2)
Turn-On Time ton
td(on)
tr
10
10
18
25
VDD=-30V
ID=-0.27A
VGS=-10V
RGS=50Ω
Turn-Off Time toff
td(off)
tf
* (1) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
(2) Sample test.
3 - 69
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