BSS84W-7 [DIODES]
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3;型号: | BSS84W-7 |
厂家: | DIODES INCORPORATED |
描述: | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 开关 光电二极管 晶体管 |
文件: | 总5页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BSS84W
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
Features
ID
Low On-Resistance
V(BR)DSS
RDS(ON)
TA = +25°C
-130mA
Low Gate Threshold Voltage
-50V
10Ω VGS = -5V
Low Input Capacitance
Fast Switching Speed
Description
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: SOT323
Case Material: Molded Plastic, "Green" Molding Compound, UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
e3
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Weight: 0.006 grams (approximate)
Drain
SOT323
D
Gate
G
S
Source
Top View
Equivalent Circuit
Top View
Ordering Information (Note 4 & 5)
Part Number
BSS84W-7-F
BSS84WQ-7-F
Compliance
Standard
Automotive
Case
SOT323
SOT323
Packaging
3000 / Tape & Reel
3000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
K84 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
K84
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
2012
2013
2014
2015
2016
2017
2018
Code
Z
A
B
C
D
E
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
BSS84W
Document number: DS30205 Rev. 15 - 2
BSS84W
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
VDGR
VGSS
ID
Value
-50
Units
V
Drain-Gate Voltage (Note 6)
-50
V
Gate-Source Voltage
Continuous
Continuous
V
20
-130
-1
Drain Current (Note 6)
Pulsed Drain Current (Note 6)
mA
A
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Symbol
PD
Value
200
Units
mW
°C/W
°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
625
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-50
-75
V
BVDSS
IDSS
VGS = 0V, ID = -250µA
-1
-2
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = +25°C
VDS = -50V, VGS = 0V, TJ = +125°C
VDS = -25V, VGS = 0V, TJ = +25°C
Zero Gate Voltage Drain Current
Gate-Body Leakage
nA
10
IGSS
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.8
-1.6
6
-2.0
10
V
Ω
S
VGS(th)
RDS(ON)
gFS
VDS = VGS, ID = -1mA
VGS = -5V, ID = -0.1A
VDS = -25V, ID = -0.1A
Static Drain-Source On-Resistance
Forward Transconductance
0.05
DYNAMIC CHARACTERISTICS
Input Capacitance
45
25
12
pF
pF
pF
Ciss
Coss
Crss
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
10
18
ns
ns
tD(ON)
VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V
Turn-Off Delay Time
tD(OFF)
Notes:
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
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© Diodes Incorporated
BSS84W
Document number: DS30205 Rev. 15 - 2
BSS84W
-600
-500
250
200
TA = 25°C
VGS = -5V
-4.5V
-400
-300
-200
150
-3.5V
100
50
0
-3.0V
-100
0
-2.5V
0
25
50
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
75
150
200
100 125
175
-1
-2
VDS, DRAIN SOURCE (V)
Fig. 2 Drain Source Current vs.Drain Source Voltage
-3
-5
0
-4
-1.0
10
9
-0.8
-0.6
-0.4
8
7
6
5
4
3
2
TA = -55°C
TA = 25°C
TA = 125°C
-0.2
-0.0
TA = 125°C
1
0
TA = 25°C
0
-2
VGS, GATE-SOURCE (V)
-4
-5
-1
-2
-3
-5
-1
-3
0
-4
-6
-7
-8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Fig. 3 Drain Current vs. Gate Source Voltage
Fig. 4 On-Resistance vs. Gate-Source Voltage
15
12
25.0
20.0
V
I
= -10V
GS
= -0.13A
D
VGS = -3.5V
VGS = -3V
VGS = -4.5V
9
6
15.0
10.0
VGS = -5V
VGS = -4V
VGS = -6V
3
0
5.0
0.0
VGS = -8V
VGS = -10V
-0.0
-0.6
ID, DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
-0.8
1.0
0
100
125
-0.2
-0.4
-25
50
75
150
-50
25
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
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© Diodes Incorporated
BSS84W
Document number: DS30205 Rev. 15 - 2
BSS84W
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
SOT323
Dim
A
B
C
D
G
H
J
K
L
Min
Max
0.40
1.35
2.20
-
1.40
2.20
0.10
1.00
0.40
0.18
8°
Typ
0.30
1.30
2.10
0.65
1.30
2.15
0.05
0.95
0.30
0.11
-
0.25
1.15
2.00
-
1.20
1.80
0.0
0.90
0.25
0.10
0°
C
B
G
H
K
J
M
M
L
D
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.8
0.7
0.9
1.9
1.0
Z
C
E
X
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© Diodes Incorporated
BSS84W
Document number: DS30205 Rev. 15 - 2
BSS84W
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
BSS84W
Document number: DS30205 Rev. 15 - 2
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