BSS84V [DIODES]
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双P沟道增强型场效应晶体管
| 型号： | BSS84V |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: BSS84V
BSS84V
DUAL P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Lead-free Green
Features
·
·
·
·
·
·
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
A
SOT-563
Fast Switching Speed
Dim Min
Max
0.30
1.25
1.70
0.50
1.10
1.70
0.60
0.30
0.18
Typ
0.25
1.20
1.60
Lead Free By Design/RoHS Compliant (Note 3)
“Green” Device (Note 4)
B
C
A
B
C
D
G
H
K
L
0.15
1.10
1.55
Mechanical Data
·
·
D
G
Case: SOT-563
Case Material: Molded Plastic, "Green" Molding
0.90
1.50
0.56
0.10
0.10
1.00
1.60
0.60
0.20
¾
Compound. UL Flammability Classification Rating 94V-0
M
K
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish ¾ Matte Tin annealed over Copper
H
leadframe. Solderable per MIL-STD-202, Method 208
L
M
·
·
·
·
Terminal Connections: See Diagram
Marking Code (See Page 2): K84
All Dimensions in mm
D2
G1
S1
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
S2
G2
D1
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
VDGR
VGSS
ID
Value
-50
Units
V
Drain-Source Voltage
-50
V
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Continuous
Continuous
±20
-130
150
833
V
mA
mW
°C/W
°C
Drain Current (Note 2)
Pd
Total Power Dissipation (Note 2)
RqJA
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Note: 1.
R
£ 20KW.
GS
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30605 Rev. 7 - 2
1 of 4
BSS84V
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max Unit
Test Condition
BVDSS
IDSS
VGS = 0V, ID = -250mA
-50
-75
¾
V
VDS = -50V, VGS = 0V, TJ = 25°C
DS = -50V, VGS = 0V, TJ = 125°C
DS = -25V, VGS = 0V, TJ = 25°C
µA
µA
nA
¾
¾
¾
¾
¾
¾
-15
-60
-100
Zero Gate Voltage Drain Current
V
V
IGSS
Gate-Body Leakage
V
GS = ±20V, VDS = 0V
¾
¾
±50
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VDS = VGS, ID = -1mA
VGS = -5V, ID = -0.100A
VDS = -25V, ID = -0.1A
VGS(th)
RDS (ON)
gFS
-0.8
¾
-1.6
2
-2.0
10
V
W
S
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.05
¾
¾
Ciss
Coss
Crss
¾
¾
¾
¾
¾
¾
45
25
12
pF
pF
pF
V
DS = -25V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
¾
¾
10
18
¾
¾
ns
ns
VDD = -30V, ID = -0.27A,
RGEN = 50W, VGS = -10V
tD(OFF)
Turn-Off Delay Time
(Note 6)
Ordering Information
Device
Packaging
Shipping
BSS84V-7
SOT-563
3000/Tape & Reel
Notes: 5. Short duration test pulse used to minimize self-heating effect.
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
(Note 7)
Marking Information
K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K84 YM
Notes: 7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30605 Rev. 7 - 2
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BSS84V
www.diodes.com
-1.4
-1.2
200
150
125
VGS = -10V
-1.0
-0.8
-0.6
-0.4
-0.2
0
VGS = -8V
100
75
VGS = -5V
50
25
0
VGS = -3V
175
25
50
75
100
125
150
0
0
-0.5 -1 -1.5
-2.5 -3 -3.5 -4 -4.5
-2
-5
TA, AMBIENT TEMPERATURE (°C)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Typical Output Characteristics
Fig. 1, Max Power Dissipation vs
Ambient Temperature
-1
3.0
2.5
2.0
1.5
VDS = -10V
VGS = -5V
-0.1
VGS = -10V
1.0
0.5
0
-0.01
-0.001
-0.001
-0.01
-0.1
-1
-1
0
-2
-3
-4
-5
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 3 Typical Transfer Characteristics
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
8
-1
7
6
VGS = -10V
-0.1
ID = -65mA
5
4
ID = -130mA
VGS = -0V
3
2
-0.01
1
0
-0.001
-0.5
-1.5
0
-1.0
-4
-6
-8
-2
0
-10
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 6 Reverse Drain Current vs.
Body Diode Forward Voltage
Fig. 5 Static Drain-Source On-Resistance vs.
Gate-Source Voltage
DS30605 Rev. 7 - 2
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www.diodes.com
BSS84V
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30605 Rev. 7 - 2
4 of 4
BSS84V
www.diodes.com
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