1H8-TB-LF [WTE]
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN;
| 型号： | 1H8-TB-LF |
| 厂家： | 
WON-TOP ELECTRONICS |
| 描述： | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN 功效 |
| 文件： | 总3页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WTE
POWER SEMICONDUCTORS
1H1 – 1H8
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER
Features
!
Diffused Junction
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
!
!
Case: Molded Plastic
D
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.181grams (approx.)
Mounting Position: Any
R-1
Min
20.0
2.00
0.53
2.20
Dim
A
Max
—
!
!
!
!
B
3.50
0.64
2.60
C
Marking: Type Number
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1H1
1H2
1H3
1H4
1H5
1H6
1H7
1H8
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
300
210
400
280
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
(Note 1)
1.0
30
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
A
Forward Voltage
@IF = 1.0A
VFM
IRM
1.0
1.3
1.7
V
Peak Reverse Current
@TA = 25°C
5.0
100
µA
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
trr
Cj
50
20
75
15
nS
pF
°C
°C
Tj
-65 to +125
-65 to +150
Storage Temperature Range
TSTG
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 1.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1H1 – 1H8
1 of 3
© 2002 Won-Top Electronics
1.00
Tj = 25°C
Single phase half wave
Resistive or Inductive load
Pulse width = 300µs
10
0.75
0.50
0.25
1H5
1H1 - 1H4
1.0
0.1
0.01
100
1H6 - 1H8
0
0
25
50
75
100 125
150 175
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
30
Tj = 25°C
f = 1.0MHz
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
1H1 - 1H5
20
10
0
10
1H6 - 1H8
1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
1H1 – 1H8
2 of 3
© 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.!
1H1-T3
Package Type
Shipping Quantity
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
R-1
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
1H1-TB
1H1
1H2-T3
1H2-TB
1H2
1H3-T3
1H3-TB
1H3
1H4-T3
1H4-TB
1H4
1H5-T3
1H5-TB
1H5
1H6-T3
1H6-TB
1H6
1H7-T3
1H7-TB
1H7
1H8-T3
1H8-TB
1H8
Products listed in
are WTE
devices.
Preferred
bold
!T3 suffix refers to a 13” reel. TB suffix refers to Ammo Pack.
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
WARNING
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http://www.wontop.com
Wepoweryoureveryday.
1H1 – 1H8
3 of 3
© 2002 Won-Top Electronics
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