1H8G [DAESAN]

CURRENT 1.0 Ampere VOLTAGE 50 to 1000 Volts; 当前1.0安培电压50到1000伏特
1H8G
型号: 1H8G
厂家: DAESAN ELECTRONICS CORP.    DAESAN ELECTRONICS CORP.
描述:

CURRENT 1.0 Ampere VOLTAGE 50 to 1000 Volts
当前1.0安培电压50到1000伏特

二极管
文件: 总2页 (文件大小:284K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CURRENT 1.0 Ampere  
VOLTAGE 50 to 1000 Volts  
1H1G THRU 1H8G  
Features  
· Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
R-1  
· Low forward voltage drop  
· High current capability  
· High reliability  
0.102(2.6)  
0.091(2.3)  
DIA.  
0.787(20.0)  
MIN.  
· Low power loss, high effciency  
· High surge current capability  
· High speed switching  
· Low leakage  
0.126(3.2)  
0.106(2.7)  
Mechanical Data  
· Case : R-1 molded plastic body  
· Epoxy : UL94V-0 rate flame retardant  
· Lead : Plated axial lead solderable per MIL-STR-750,  
method 2026  
· Polarity : Color band denotes cathode end  
· Mounting Position : Any  
0.787(20.0)  
MIN.  
0.025(0.65)  
0.021(0.55)  
DIA.  
Dimensions in inches and (millimeters)  
· Weight : 0.007 ounce, 0.19 gram  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G  
Symbols  
Units  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
V
Maximum DC blocking voltage  
V
DC  
100  
1000  
Maximum average forward rectified current  
0.375"(9.5mm) lead length TA=55℃  
I
(AV)  
1.0  
Amp  
Amps  
Volts  
Peak forward surge current 8.3ms single  
half sine-wave superimposed on rated load  
(JEDEC method)  
25.0  
1.3  
IFSM  
Maximum instantaneous forward voltage  
at 1.0A  
V
F
1.0  
1.7  
Maximum DC Reverse Current at rated DC  
blocking voltage  
5.0  
μA  
IR  
Maximum full load reverse current full cycle  
average. 0.375"(9.5mm) lead length at  
100  
TL=55℃  
Maximum reverse recovery time (Note 1)  
Typical junction capacitance (Note 2)  
Trr  
50  
20  
70  
15  
ns  
C
J
pF  
Operating Junction and Storage temperature  
Range  
TJ  
-65 to +150  
TSTG  
Notes:  
(1) Test conditions: I  
F=0.5A, IR=1.0A, Irr=0.25A.  
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.  
RATINGS AND CHARACTERISTIC CURVES 1H1G THRU 1H8G  
FIG.2-TYPICAL FORWARD CURRENT  
DERATING CURVE  
FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE  
RECOVERY TIME CHARACTERISTIC  
2.0  
50  
NON INDUCTIVE  
10Ω  
NON INDUCTIVE  
Trr  
+0.5A  
SINGLE PHASE HALF WAVE 60Hz  
RESISTIVE OR INDUCTIVE LOAD  
0.375"(9.5mm) LEAD LENGTH  
( + )  
D.U.T.  
PULSE  
GENERATOR  
(NOTE2)  
0
25Vdc  
(APPROX)  
1.0  
-0.25A  
(
)
1Ω  
OSCILLOSCOPE  
(NOTE1)  
NON IN-  
DUCTIVE  
-1.0A  
NOTES:1.Rise Time=7ns max. input impedance=1  
megohm 22pF  
1cm  
0
2.Rise Time=10ns max. source impedance =  
50 ohms  
SET TIME BASE FOR 20/30 ns/cm  
0
25  
50  
75  
100  
125  
150  
175  
AMBIENT TEMPERATURE ( )  
FIG.3-TYPICAL FORWARD CHARACTERISTICS  
FIG.4-TYPICAL REVERSE CHARACTERISTICS  
10  
1000  
TA=125  
100  
10  
1.0  
0.1  
TA=25℃  
1.0  
0.1  
0.01  
TA=25  
PULSE WIDTH=300µS  
1% DUTY CYCLE  
0
20  
40  
60  
80  
100  
120  
140  
0.001  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)  
FIG.5-MAXIMUM NON-REPETITIVE  
NUMBER OF CYCLES AT 60Hz  
FIG6-TYPICAL JUNCTION CAPACITANCE  
REVERSE VOLTAGE. (V)  
FORWARD SURGE CURRENT  
40  
70  
60  
35  
TA=25℃  
8.3m SINGLE HALF SINE WAVE  
(JEDEC Method)  
30  
25  
20  
50  
40  
TJ=25℃  
30  
20  
1H1G-1H6G  
15  
10  
5
10  
0
1H7G-1H8G  
0.5  
1
5
10  
50  
100  
0.1  
1
2
5
10 20  
100 200  
1000  
50  

相关型号:

1HD10J98

Rectifier Diode, 1 Phase, 196 Element, 2.8A, 1000V V(RRM), Silicon,
INFINEON

1HD12K98

Rectifier Diode, 1 Phase, 196 Element, 2.8A, 1200V V(RRM), Silicon,
INFINEON

1HD12R98

Rectifier Diode, 1 Phase, 196 Element, 3A, 1200V V(RRM), Silicon,
INFINEON

1HE1-6B

Snap Acting/Limit Switch, SPDT, Momentary, 5A, 28VDC, 7.37mm, Wire Terminal, Steel Plunger Actuator, Panel Mount-threaded
HONEYWELL

1HE1-S

Snap Acting/Limit Switch, SPDT, Momentary, 5A, 28VDC, 7.37mm, Screw Terminal, Steel Plunger Actuator, Panel Mount-threaded
HONEYWELL

1HE101-RB

Snap Acting/Limit Switch, SPDT, Momentary, 5A, 28VDC, 7.366mm, Connector Terminal, Panel Mount
HONEYWELL

1HE101-RB1

Snap Acting/Limit Switch, SPDT, Momentary, 5A, 28VDC, 1.29mm, Connector Terminal, Plunger Actuator, Panel Mount-threaded
HONEYWELL

1HN04CH

N-Channel Silicon MOSFET General-Purpose Switching Device Applications
SANYO

1HNK60

N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET
STMICROELECTR

1HNK60R

N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET
STMICROELECTR

1HP04CH

P-Channel Silicon MOSFET General-Purpose Switching Device
SANYO

1HP04CH

1HP04CH
ONSEMI