1H8G [EIC]
HIGH EFFICIENCY RECTIFIERS; 高效整流二极管
| 型号： | 1H8G |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | HIGH EFFICIENCY RECTIFIERS |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TH97/2478
TH09/2479
IATF 0060636
SGS TH07/1033
HIGH EFFICIENCY RECTIFIERS
M1A
1H1G ~ 1H8G
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
1.00 (25.4)
0.085(2.16)
MIN.
FEATURES :
0.075(1.91)
* Glass passivated chip
* High current capability
* High reliability
0.138(3.51)
0.122(3.10)
* High speed switching
* Low leakage
* Low forward voltage
* Low power loss, high efficiency
* Pb / RoHS Free
1.00 (25.4)
0.024(0.60)
MIN.
0.022(0.55)
MECHANICAL DATA :
* Case : M1A Molded plastic
Dimensions in inches and ( millimeters )
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise noted.
RATING
1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G
UNITS
SYMBOL
VRRM
VRMS
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100 200 300 400 600 800 1000
70 140 210 280 420 560 700
V
V
V
Maximum DC Blocking Voltage
100 200 300 400 600 800 1000
Maximum Average Forward
IF(AV)
1.0
A
Rectified Current at Ta = 25 °C
Peak Forward Surge Current , 8.3ms Single half sine
wave Superimposed on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at IF = 1.0 A.
Maximum DC Reverse Current
IFSM
VF
IR
25
A
V
1.0
1.3
5.0
1.7
μA
at rated DC Blocking Voltage Ta = 25 °C
Maximum Full Load Reverse Current Average,
Full Cycle 0.375” (9.5mm) lead length at TL = 55 °C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
IR
100
μA
Trr
CJ
50
15
75
12
ns
pF
°C
TJ, TSTG
- 65 to + 150
Notes :
(1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
Page 1 of 2
Rev. 01 : April 28, 2009
TH97/2478
TH09/2479
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( 1H1G - 1H8G )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50 Ω
10 Ω
+ 0.5 A
D.U.T.
0
PULSE
+
- 0.25 A
GENERATOR
( NOTE 2 )
25 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1
1 Ω
- 1.0 A
SET TIME BASE FOR 10/20 ns/cm
Notes : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - TYPICAL FORWARD CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE
DERATING CURVE
FORWARD SURGE CURRENT
25
1.0
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.8
0.6
20
15
0.4
0.2
10
Single Phase
Half Wave 60Hz
Resistive or
5
0
Inductive Load
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( °C)
FIG.4 - TYPICAL INSTANTANEOUS FORWARD
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
CHARACTERISTICS
10
100
50,100, 200 V
TJ = 150 °C
1
10
300, 400 V
TJ = 100 °C
1
0.1
600, 800, 1000 V
TJ = 25°C
0.1
TJ = 25°C
0.01
Pulse Width = 300μs
1% Duty Cycle
0.001
0.01
0
20
40
60
80
100
120
140
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD
VOLTAGE, (V)
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 01 : April 28, 2009
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