ECG008 [WJCI]

InGaP HBT Gain Block; 的InGaP HBT增益模块
ECG008
型号: ECG008
厂家: WJ COMMUNICATION. INC.    WJ COMMUNICATION. INC.
描述:

InGaP HBT Gain Block
的InGaP HBT增益模块

文件: 总4页 (文件大小:192K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ECG008  
InGaP HBT Gain Block  
Product Features  
Product Description  
Functional Diagram  
GND  
The ECG008 is a general-purpose buffer amplifier that  
offers high dynamic range in a low-cost surface-mount  
package. At 1000 MHz, the ECG008 typically provides 15  
dB of gain, +40 dBm Output IP3, and +24 dBm P1dB.  
DC – 4 GHz  
4
+24 dBm P1dB at 1 GHz  
+40 dBm OIP3 at 1 GHz  
15 dB Gain at 1 GHz  
4.6 dB Noise Figure  
The ECG008 consists of Darlington pair amplifiers using  
the high reliability InGaP/GaAs HBT process technology  
and only requires DC-blocking capacitors, a bias resistor,  
and an inductive RF choke for operation. The device is  
ideal for wireless applications and is available in a lead-  
free/green/RoHS-compliant SOT-89 package. All devices  
are 100% RF and DC tested.  
1
2
3
Available in Lead-free / green  
SOT-89 Package Style  
RF IN  
GND  
RF OUT  
Internally matched to 50 Ω  
Function  
Pin No.  
Input  
1
3
Output/Bias  
Ground  
Applications  
The broadband MMIC amplifier can be directly applied to  
various current and next generation wireless technologies  
such as GPRS, GSM, CDMA, and W-CDMA. In addition,  
the ECG008 will work for other various applications within  
the DC to 4 GHz frequency range such as CATV and  
mobile wireless.  
2, 4  
Mobile Infrastructure  
CATV / FTTX  
W-LAN / ISM  
RFID  
WiMAX / WiBro  
Specifications (1)  
Typical Performance (1)  
Parameter  
Operational Bandwidth  
Test Frequency  
Gain  
Units Min Typ Max  
Parameter  
Frequency  
Units  
MHz  
Typical  
MHz  
MHz  
dB  
DC  
4000  
500  
14.7  
-26  
900  
14.6  
-28.5  
-17.4  
+24  
1900  
14.3  
-28  
2140  
S21  
dB  
dB  
14.3  
-19.5  
-15  
1000  
15  
S11  
S22  
dB  
-19.4  
+24.3  
+41  
-13.4  
Output P1dB  
Output IP3 (3)  
Noise Figure  
dBm  
dBm  
dB  
+24  
+40  
4.6  
Output P1dB  
Output IP3  
Noise Figure  
dBm  
dBm  
dB  
+23.3 +19.0  
+40  
+37  
4.7  
+30.5  
4.8  
4.7  
4.6  
Test Frequency  
Gain  
MHz  
dB  
2000  
14.3  
25  
13  
Input Return Loss  
Output Return Loss  
Output P1dB  
Output IP3 (2)  
Noise Figure  
dB  
dB  
14  
dBm  
dBm  
dB  
+23  
+37  
4.8  
+34  
6.8  
Device Voltage  
Device Current  
V
7.3  
7.8  
mA  
120  
10:1  
Output mismatch w/o spurs VSWR  
1. Test conditions unless otherwise noted: 25 ºC, Supply voltage = +9 V, Rbias = 14 , 50 system.  
2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The  
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
Absolute Maximum Rating  
Parameter  
Rating  
Ordering Information  
Operating Case Temperature  
Storage Temperature  
RF Input Power (continuous)  
Device Current  
-40 to +85 °C  
-65 to +150 °C  
+15 dBm  
Part No.  
Description  
InGaP HBT Gain Block  
(lead-free/green/RoHS-compliant SOT-89 package)  
ECG008B-G  
ECG008B-PCB  
160 mA  
Junction Temperature  
700 –2400 MHz Fully Assembled Eval. Board  
+250 °C  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
Page 1 of 4 April 2007  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com  
ECG008  
InGaP HBT Gain Block  
Typical Device RF Performance (3)  
Supply Bias = +9 V, Rbias = 14 , Icc = 120 mA  
Frequency  
S21  
MHz  
dB  
100  
14.8  
-25  
500  
14.7  
-26  
900  
14.6  
-28.5  
-17  
1900  
14.3  
-28  
2140  
14.3  
-25  
2400  
14.2  
-23.2  
-12  
3500  
14.5  
-15.4  
-7.9  
5800  
12.4  
-6  
S11  
dB  
S22  
dB  
-20  
-19  
-13  
-13  
-2.7  
Output P1dB  
Output IP3  
Noise Figure  
dBm  
dBm  
dB  
+24.5 +24.3  
+24  
+40  
4.6  
+23.2 +22.8 +21.8 +17.3  
+41.6  
4.9  
+41  
4.7  
+37  
4.7  
+36  
4.9  
+34  
5.2  
1. Test conditions: T = 25º C, Supply Voltage = +9 V, Device Voltage = 7.3 V, Rbias = 14 , Icc = 120 mA typical, 50 System.  
2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. The performance data does not  
account for losses attributed to recommended input and output series resistances shown in the application circuit on page 3.  
Gain vs. Frequency  
S11, S22 vs. Frequency  
S22  
Vde vs. Icc  
0
-5  
140  
120  
100  
80  
20  
18  
16  
14  
12  
10  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
S11  
+25°C  
60  
40  
20  
+25°C -40°C +85°C  
0
0
1
2
3
4
5
6
0.0  
2.0  
4.0  
Vde (V)  
6.0  
8.0  
10.0  
500  
1000  
1500  
2000  
2500  
3000  
Frequency (MHz)  
Frequency (GHz)  
OIP3 vs. Frequency  
Noise Figure vs. Frequency  
P1dB vs. Frequency  
45  
30  
25  
20  
15  
10  
5
4.5  
4
40  
35  
30  
25  
3.5  
3
2.5  
2
+25°C -40°C +85°C  
+25°C -40°C +85°C  
500  
1000  
1500  
2000  
2500  
3000  
500  
1000  
1500  
2000  
500  
1000  
1500  
2000  
2500  
3000  
Frequency (MHz)  
Frequency (MHz)  
Frequency (MHz)  
S-Parameters (Vdevice = +7.3 V, ICC = 120 mA, T = 25°C, calibrated to device leads)  
Freq (MHz)  
50  
S11 (dB)  
-24.87  
-26.14  
-28.46  
-30.86  
-28.14  
-23.15  
-18.78  
-15.39  
-12.91  
-10.59  
-8.44  
S11 (ang)  
176.05  
167.68  
166.94  
-178.22  
-144.76  
-137.68  
-150.37  
-171.26  
161.38  
132.87  
105.27  
80.71  
S21 (dB)  
14.88  
14.71  
14.60  
14.39  
14.30  
14.20  
14.30  
14.48  
14.65  
14.51  
14.04  
13.17  
12.10  
S21 (ang)  
177.77  
161.26  
142.99  
125.46  
108.38  
91.08  
S12 (dB)  
-18.94  
-18.94  
-19.02  
-18.94  
-18.86  
-18.64  
-18.20  
-17.52  
-16.85  
-16.36  
-16.20  
-16.26  
-16.59  
S12 (ang)  
-1.51  
S22 (dB)  
S22 (ang)  
-20.41  
-19.43  
-17.47  
-15.40  
-13.40  
-11.63  
-9.65  
-4.20  
-39.76  
-72.27  
-95.62  
-116.18  
-133.34  
-151.20  
-171.17  
165.56  
141.33  
117.07  
94.30  
500  
-5.99  
1000  
1500  
2000  
2500  
3000  
3500  
4000  
4500  
5000  
5500  
6000  
-11.44  
-16.56  
-21.00  
-25.54  
-29.98  
-36.74  
-45.50  
-56.53  
-68.74  
-81.52  
-93.75  
74.41  
56.29  
-7.83  
35.57  
-6.06  
13.60  
-4.68  
-8.75  
-3.62  
-6.76  
-31.25  
-50.89  
-2.87  
-5.43  
61.63  
-2.41  
73.89  
Device S-parameters are available for download off of the website at: http://www.wj.com  
Specifications and information are subject to change without notice  
Page 2 of 4 April 2007  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com  
ECG008  
InGaP HBT Gain Block  
Recommended Application Circuit  
Vcc  
Icc = 120 mA  
R3  
Bias  
Resistor  
C4  
Bypass  
Capacitor  
C3  
0.018 µF  
L1  
RF Choke  
RF IN  
RF OUT  
ECG008B  
R1  
18 Ω  
R2  
4.7 Ω  
C2  
Blocking  
Capacitor  
C1  
Blocking  
Capacitor  
Recommended Component Values  
Recommended Bias Resistor Values  
Reference  
Designator  
L1  
Frequency (MHz)  
Supply  
R3 value  
Size  
50  
500  
900  
1900  
27 nH  
68 pF  
2200  
22 nH  
68 pF  
2500  
18 nH  
56 pF  
3500  
15 nH  
39 pF  
Voltage  
9 V  
820 nH  
.018 µF  
220 nH  
1000 pF  
68 nH  
100 pF  
14 ohms  
23 ohms  
39 ohms  
2010  
2512  
2512  
C1, C2, C3  
10 V  
12 V  
1. The proper values for the components are dependent upon the intended frequency of operation.  
2. The component values in the table below are contained on the evaluation board to achieve optimal broadband  
performance.  
3. R1 and R2 are shown in the circuit diagram to avoid potential instabilities. The configuration shown above assures  
of unconditional stability with the use of the device. It is expected that linearity parameters (OIP3 and P1dB) to  
degrade about only 0.5 dB, while overall gain will be about 2 dB less than the performance shown in page 1 and 2 of  
this datasheet. Input and output return loss is expected to improve with the use of the I/O series resistances at 2 GHz.  
The proper value for R3 is dependent upon the supply  
voltage and allows for bias stability over temperature.  
WJ recommends a minimum supply bias of +9 V.  
1% tolerance resistor is recommended.  
A
Ref. Desig.  
L1  
Value / Type  
Size  
39 nH wirewound inductor  
56 pF chip capacitor  
0.018 µF chip capacitor  
Do Not Place  
0603  
0603  
0603  
C1, C2  
C3  
C4  
R1  
0603  
0603  
2010  
18 chip resistor  
4.7 chip resistor  
14 1% tolerance  
R2  
R3  
ECG008B-PCB Performance Data  
(WJ’s evaluation board uses the circuit shown above.)  
Gain  
Return Loss  
14  
12  
10  
8
0
-10  
-20  
-30  
S11  
S22  
6
4
0
1
2
3
4
0
1
2
3
4
Frequency (GHz)  
Frequency (GHz)  
Specifications and information are subject to change without notice  
Page 3 of 4 April 2007  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com  
ECG008  
InGaP HBT Gain Block  
ECG008B-G Mechanical Information  
This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free  
(maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.  
Outline Drawing  
Product Marking  
The component will be marked with an  
“E008G” designator with an alphanumeric lot  
code on the top surface of the package. The  
obsolete tin-lead package is marked with an  
“E008” designator followed by an  
alphanumeric lot code; it may also have been  
marked with an “6” designator followed by a  
3-digit numeric lot code.  
Tape and reel specifications for this part are  
located on the website in the “Application  
Notes” section.  
MSL / ESD Rating  
Land Pattern  
ESD Rating: Class 1A  
Value:  
Test:  
Standard:  
Passes between 250 and 500V  
Human Body Model (HBM)  
JEDEC Standard JESD22-A114  
MSL Rating: Level 3 at +260 °C convection reflow  
Standard: JEDEC Standard J-STD-020  
Mounting Config. Notes  
1. Ground / thermal vias are critical for the proper performance of  
this device. Vias should use a .35mm (#80 / .0135”) diameter  
drill and have a final plated thru diameter of .25 mm (.010”).  
2. Add as much copper as possible to inner and outer layers near  
the part to ensure optimal thermal performance.  
3. Mounting screws can be added near the part to fasten the board  
to a heatsink. Ensure that the ground / thermal via region  
contacts the heatsink.  
4. Do not put solder mask on the backside of the PC board in the  
region where the board contacts the heatsink.  
5. RF trace width depends upon the PC board material and  
construction.  
6. Use 1 oz. Copper minimum.  
7. All dimensions are in millimeters (inches). Angles are in  
degrees.  
Thermal Specifications  
Parameter  
Operating Case Temperature  
Rating  
-40 to +85 °C  
Thermal Resistance, Rth  
86 °C/W  
Specifications and information are subject to change without notice  
Page 4 of 4 April 2007  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com  

相关型号:

ECG008B

InGaP HBT Gain Block
ETC

ECG008B-G

InGaP HBT Gain Block
WJCI

ECG008B-PCB

InGaP HBT Gain Block
WJCI

ECG012

0.1 Watt, High Linearity InGaP HBT Amplifier
WJCI

ECG012B

0.1 Watt, High Linearity InGaP HBT Amplifier
ETC

ECG012B-G

0.1 Watt, High Linearity InGaP HBT Amplifier
WJCI

ECG012B-PCB1900

0.1 Watt, High Linearity InGaP HBT Amplifier
WJCI

ECG012B-PCB2140

0.1 Watt, High Linearity InGaP HBT Amplifier
WJCI

ECG012B-PCB900

0.1 Watt, High Linearity InGaP HBT Amplifier
WJCI

ECG014

0.2 Watt, High Linearity InGaP HBT Amplifier
WJCI

ECG014B

0.2 Watt, High Linearity InGaP HBT Amplifier
WJCI