AP603-PCB900 [WJCI]
High Dynamic Range 7W 28V HBT Amplifier; 高动态范围7W 28V HBT放大器
| 型号： | AP603-PCB900 |
| 厂家： | 
WJ COMMUNICATION. INC. |
| 描述： | High Dynamic Range 7W 28V HBT Amplifier |
| 文件： | 总14页 (文件大小：1171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP603
High Dynamic Range 7W 28V HBT Amplifier
Product Features
Product Description
Functional Diagram
The AP603 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has excellent backoff
linearity, while being able to achieve high performance for
800-2200 MHz applications with up to +38.5 dBm of
compressed 1dB power.
• 800 – 2200 MHz
• +38.5 dBm P1dB
• -50 dBc ACLR @ 1W PAVG
• -51 dBc IMD3 @ 1W PEP
• 15% Efficiency @ 1W PAVG
• Internal Active Bias
The AP603 uses
a
high reliability, high voltage
The device
InGaP/GaAs HBT process technology.
• Internal Temp Compensation
incorporates proprietary bias circuitry to compensate for
variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
internal active bias allows the AP603 to operate directly off
a commonly used high voltage supply (typically +24 to
+32V). An added feature allows the quiescent bias to be
adjusted externally to meet specific system requirements.
• Capable of handling 7:1 VSWR @
28 Vcc, 2.14 GHz, 5.5W CW Pout
IMD3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
-30
• Lead-free/RoHS-compliant
5x6 mm power DFN package
-40
-50
-60
The AP603 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
80 mA
Applications
-70
160 mA
260 mA
-80
• Mobile Infrastructure
• High Power Amplifier (HPA)
26
28
30
32
34 36
Output Power, PEP (dBm)
Specifications
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA
Parameter
Units Min Typ Max
Parameter
Test Frequency
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Units
MHz
dBm
dB
dB
dB
dBc
dBc
mA
%
Typical
1960
+30
13
Operational Bandwidth
Test Frequency
Output Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +30 dBm PEP
PIN_VPD Current, Ipd
Operating Current, Icc
Collector Efficiency
Output P1dB
MHz
MHz
dBm
dB
800
2200
940
+30
17
2140
+30
11.8
10
8.2
-50
-51
246
14.6
2140
+30
11.8
10
11
13
7.5
-49
-52
230
15.5
5.5
-52
-52
217
16.6
dB
dB
8.2
dBc
dBc
mA
mA
%
-50
-51
4
246
14.6
+38.2
160
+5
dBm
mA
V
+38.5 +38.5 +38.2
160
+5
+28
dBm
mA
V
Vcc
V
Quiescent Current, Icq
Vpd, Vbias
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 160 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
Vcc
V
+28
2. The AP603 evaluation board has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 5.5W CW Pout,
Absolute Maximum Rating
5:1 VSWR @ +30 Vcc, 2140 MHz, 5.5W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 5.5W CW Pout.
Parameter
Storage Temperature, Tstg
Rating
-55 to +125 ºC
Ordering Information
Junction Temperature, TJ
192 ºC
For 106 hours MTTF
Part No.
Description
RF Input Power (CW tone), Pin
Breakdown Voltage C-B, BVCBO
Breakdown Voltage C-E, BVCEO
Quiescent Bias Current, ICQ
Power Dissipation, PDISS
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
320 mA
AP603-F
High Dynamic Range 28V 7W HBT Amplifier
AP603-PCB900 920-960 MHz Evaluation board
AP603-PCB1960 1930-1990 MHz Evaluation board
AP603-PCB2140 2110-2170 MHz Evaluation board
9.5 W
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
Page 1 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
Typical Device Data
S-Parameters (VCC = +28 V, VPD = VBIAS = 5 V, ICQ = 160 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
S11
S22
Gain / Maximum Stable Gain
Swp Max
3.00001GHz
Swp Max
3.00001GHz
40
35
30
25
20
15
10
5
DB(|S(2,1)|)
DB(GMax())
0
-5
-10
0
0.5
1
1.5
2
2.5
Frequency (GHz)
Swp Min
3e-005GHz
Swp Min
3e-005GHz
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
Freq (MHz)
50
S11 (dB)
-2.63
-1.78
-0.92
-0.64
-0.53
-0.52
-0.46
-0.44
-0.38
-0.39
-0.48
-0.59
-0.73
-0.97
-1.21
-1.28
-1.18
S11 (ang)
-169.40
-170.62
-173.99
-177.96
-178.87
-178.84
-177.79
-177.25
-176.83
-177.55
-179.87
175.92
170.02
163.30
157.14
153.30
152.21
S21 (dB)
25.54
23.33
19.08
13.40
9.88
7.52
5.42
4.01
2.93
2.22
1.77
1.54
1.41
1.23
0.75
0.03
-0.89
S21 (ang)
146.01
132.51
109.79
93.01
85.15
79.52
74.40
69.71
64.99
59.81
52.82
44.04
33.03
19.79
3.56
S12 (dB)
-40.50
-38.11
-36.04
-35.59
-35.72
-35.90
-35.68
-35.62
-35.48
-35.13
-34.75
-34.21
-33.63
-33.13
-32.89
-33.04
-33.44
S12 (ang)
55.97
39.21
21.60
9.15
3.39
6.93
5.88
3.23
S22 (dB)
-1.32
-3.07
-5.00
-6.06
-5.82
-5.38
-4.77
-4.16
-3.62
-3.12
-2.63
-2.19
-1.74
-1.28
-0.90
-0.57
-0.45
S22 (ang)
-45.78
-67.75
100
200
400
600
-104.04
-129.02
-136.33
-138.25
-139.20
-139.65
-139.95
-140.63
-142.14
-144.85
-149.24
-155.12
-162.55
-170.87
-178.70
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
1.79
-0.56
-4.12
-10.23
-18.12
-29.67
-43.94
-61.10
-81.90
-14.33
-34.56
Device S-parameters are available for download off of the website at: http://www.wj.com
Load-Pull Data
Test condition: Output Power = 29.5 dBm, VCC = +28 V, ICQ = 160 mA, ZS = 50 Ω
Test signal = W-CDMA (PAR=8.6dB @ 0.01% Probability), 2140 MHz
The reference plane is at the AP603-PCB2140 eval board’s SMA connectors.
The plots are shown to detail the optimization of the ACLR performance.
Gain Load-Pull
ACLR Load-Pull
PAE Load-Pull
GAIN Max=13.08 dB at 76.9-j37.0
ACPR1LO Min=-50.98 dBc at 57.9-j2.6
P.A.EFF Max=16.98 % at 34.4-j49.7
Specifications and information are subject to change without notice
Page 2 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
Application Circuit PC Board Layout
Baseplate Configuration
Notes:
1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger
heat sink during operation and in laboratory environments to dissipate the power consumed by the
device. The use of a convection fan is also recommended in laboratory environments.
2. The area around the module underneath the PCB should not contain any soldermask in order to
maintain good RF grounding.
PCB Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz Cu,
εr = 2.45, Microstrip line details: width = .042”, spacing = .050”
3. For proper and safe operation in the laboratory, the power-on sequencing is recommended.
Evaluation Board Bias Procedure
The following bias procedure is recommended to ensure proper functionality of AP603 in a laboratory environment. The sequencing is not
required in the final system application.
Bias.
Vcc
Vbias
Vpd
Voltage (V)
+28
+5
+5
Turn-on Sequence:
1. Attach input and output loads onto the evaluation board.
2. Turn on power supply Vcc = +28V.
3. Turn on power supply Vbias = +5V. At this point, the only current drawn by the device is leakage current (< 25μA).
4. Turn on power supply Vpd = +5V. Power supply Vcc should now be drawing typical Icq = 160mA.
5. Turn on RF power.
Turn-off Sequence:
1. Turn off RF power.
2. Turn off power supply Vpd = +5V.
3. Turn off power supply Vbias = +5V.
4. Turn off power supply Vcc = +28V.
Notes:
1. Icq can be adjusted with the resistor R2 from the Vpd (+5V) supply and the PIN_VPD (pin14) of the amplifier. Increasing R2
results in a lower Icq. Icq should not be increased above 320mA.
2. Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier. Ipd depends on the Icq
quiescent current setting. Ipd can be up to 8mA at a quiescent current setting of 320mA.
3. Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level. It can be up to 8mA on the AP603.
Ipd vs Icq
Ibias vs Output Power
8
6
4
2
0
8
6
4
2
0
0
100
200
300
400
22
24
26
28
30
32
Icq Setting (mA)
Output Average Power (dBm)
Specifications and information are subject to change without notice
Page 3 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
869-894 MHz Reference Design
Typical WCDMA Performance at 25 °C
at a channel power of +30 dBm
Frequency
880 MHz
+30 dBm
18 dB
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
11 dB
C7
7.5 dB
1000pF
-52 dBc
-52 dBc
220 mA
16.5 %
+38.5 dBm
160 mA
+5 V
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
C28
6.8 nH
6.8 pF
See note 4
See note 5
Quiescent Current, Icq
Vpd, Vbias
C31
L24
2.2 nH
See note 3
3.3 pF
See note 6
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L24 is placed at 0.090” (3.5° @ 880 MHz) from the center of C5.
4. The center of C28 is placed at 0.220” (8.4° @ 880 MHz) from the edge of the AP603 (U1).
5. The center of L4 is placed at 0.200” (7.7° @ 880 MHz) from the edge of the AP603 (U1).
6. The center of C31 is placed at 0.360” (13.8° @ 880 MHz) from the center of L4.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
8. The main RF trace is cut at component C28 and L4 for this particular reference design.
C28
L24
L4
C31
869-894 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 ˚C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
19
18
17
16
15
14
60
50
40
30
20
10
0
0
-5
869 MHz
880 MHz
894 MHz
-10
-15
-20
-25
869 MHz
S11
S22
880 MHz
894 MHz
0.75
0.8
0.85
0.9
0.95
30
32
34
36
38
40
14
18
22
26
30
34
38
Frequency (GHz)
Output Power (dBm)
Output Power (dBm)
ACLR1 vs. Output Power vs. Frequency
IMD vs. Output Power
Efficiency vs. Output Power vs. Frequency
CW 2-tone signal, 880 MHz, ∆f = 1 MHz, 28V, 160 mA Icq, 25 ˚C
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
-40
25
-50
869 MHz
880 MHz
894 MHz
869 MHz
880 MHz
894 MHz
-45
-50
-55
-60
-65
20
15
10
5
-55
-60
-65
-70
-75
IMD3L
30
IMD3U
32
IMD5
0
26
28
34
36
22
24
26
28
30
32
22
24
26
28
30
32
Average Output Power (dBm)
Output Power, PEP (dBm)
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
Page 4 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
920-960 MHz Application Circuit (AP603-PCB900)
Typical WCDMA Performance at 25 °C
at a channel power of +30 dBm
Frequency
940 MHz
+30 dBm
17 dB
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
11 dB
C7
5.5 dB
1000pF
-52 dBc
-52 dBc
217 mA
16.6 %
+38.5 dBm
160 mA
+5 V
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
1.8 Ohm
See note 5
Quiescent Current, Icq
Vpd, Vbias
5.6pF
See note 3
See note 4
See note 6
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C24 is placed at 0.245” (10.0° @ 940 MHz) from the center of C5.
4. The center of C5 is placed at .060” (2.5° @ 940 MHz) from the edge of the AP603 (U1).
5. The center of L4 is placed at 0.170” (7.0° @ 940 MHz) from the edge of the AP603 (U1). L4
is required to be an AVX 0805 type.
6. The center of C25 is placed at 0.480” (19.7° @ 940 MHz) from the center of L4.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
8. The main RF trace is cut at component L3 and L4 for this particular reference design.
L3
C5
920-960 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Efficiency vs. Output Power vs. Frequency
Gain vs. Output Power vs. Frequency
S11, S22 vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
Vcc = 28V, Icq = 160 mA, 25 ˚C
50
40
30
20
10
0
18
17
16
15
14
13
0
-5
920 MHz
940 MHz
960 MHz
-10
-15
-20
-25
920 MHz
S11
S22
940 MHz
960 MHz
0.8
0.85
0.9
0.95
1
1.05
1.1
14
18
22
26
30
34
38
30
32
34
36
38
40
Frequency (GHz)
Output Power (dBm)
Output Power (dBm)
ACLR1 vs. Output Power vs. Frequency
IMD vs. Output Power
Efficiency vs. Output Power vs. Frequency
CW 2-tone signal, 940 MHz, ∆f = 1 MHz, 28V, 160 mA Icq, 25 ˚C
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
-40
-45
-50
-55
-60
-65
25
20
15
10
5
-50
-55
-60
-65
-70
-75
920 MHz
940 MHz
960 MHz
920 MHz
940 MHz
960 MHz
IMD3L
IMD3U
IMD5
0
26
28
30
32
34
36
22
24
26
28
30
32
22
24
26
28
30
32
Average Output Power (dBm)
Output Power, PEP (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice
Page 5 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
1930-1990 MHz Application Circuit (AP603-PCB1960)
Typical WCDMA Performance at 25 °C
at a channel power of +30 dBm
Frequency
1960 MHz
+30 dBm
13 dB
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
13 dB
C7
7.5 dB
1000pF
-49 dBc
-52 dBc
230 mA
15.5 %
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
W = .030”
L = 1.035”
L3
+38.5 dBm
160 mA
+5 V
4.7nH
See note 3
100pF
100pF
Quiescent Current, Icq
Vpd, Vbias
C29
C5
3.3pF
C28
3.3pF
See note 5
1.2pF
See note 6
See note 4
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L3 is placed at 0.115” (9.8° @ 1960 MHz) from the center of C5.
4. The center of C5 is placed at 0.100” (8.5° @ 1960 MHz) from the edge of the AP603 (U1).
5. The center of C28 is placed at 0.300” (25.6° @ 1960 MHz) from the edge of the AP603 (U1).
6. The center of C29 is placed at 0.420” (35.9° @ 1960 MHz) from the center of C28.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
L3
C5
C28
1930-1990 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 ˚C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
50
40
30
20
10
0
14
13
12
11
10
9
0
-5
1930 MHz
1960 MHz
1990 MHz
-10
-15
-20
-25
1930 MHz
S11
S22
1960 MHz
1990 MHz
1.8
1.85
1.9
1.95
2
2.05
2.1
30
32
34
36
38
40
22
26
30
34
38
Frequency (GHz)
Output Power (dBm)
Output Power (dBm)
ACLR1 vs. Output Power vs. Frequency
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
-40
-45
-50
-55
-60
-65
275
250
225
200
175
150
25
20
15
10
5
1930 MHz
1960 MHz
1990 MHz
1930 MHz
1960 MHz
1990 MHz
1930 MHz
1960 MHz
1990 MHz
0
22
24
26
28
30
32
22
24
26
28
30
32
22
24
26
28
30
32
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
Page 6 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
1930-1990 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Vcc
CW tone, Icq = 160 mA, 1960 MHz, 25 ˚C
Efficiency vs. Output Power vs. Vcc
CW tone, Icq = 160 mA, 1960 MHz, 25 ˚C
50
40
30
20
10
0
14
13
12
11
26 V
28 V
30 V
32 V
26 V
28 V
30 V
32 V
22
26
30
34
38
22
26
30
34
38
Output Power (dBm)
Output Power (dBm)
ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 160 mA, 1960 MHz, 25 ˚C
Efficiency vs. Output Power vs. Vcc
WCDMA, Icq = 160 mA, 1960 MHz, 25 ˚C
25
-40
-45
-50
-55
-60
-65
26 V
28 V
30 V
32 V
26 V
28 V
30 V
32 V
20
15
10
5
0
22
24
26
28
30
32
22
24
26
28
30
32
Average Output Power (dBm)
Average Output Power (dBm)
OIP3 vs. Output Power vs. Vcc
CW 2-tone signal, 1960 MHz, ∆f = 1 MHz, Icq = 160 mA, 25 ˚C
IMD3 vs. Output Power vs. Vcc
CW 2-tone signal, 1960 MHz, ∆f = 1 MHz, Icq = 160 mA, 25 ˚C
IMD5 vs. Output Power vs. Vcc
CW 2-tone signal, 1960 MHz, ∆f = 1 MHz, Icq = 160 mA, 25 ˚C
55
50
45
40
35
30
-35
-40
-45
-50
-55
-60
-65
-50
-55
-60
-65
-70
-75
26 V
28 V
30 V
32 V
26 V
28 V
30 V
32 V
26 V
28 V
30 V
32 V
26
28
30
32
34
36
26
28
30
32
34
36
26
28
30
32
34
36
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
Page 7 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
1930-1990 MHz Application Note: Changing Icq Biasing Configurations
The AP603 can be configured to be operated with lower bias current by varying the bias-adjust resistor – R2. The
recommended circuit configurations shown previously in this datasheet have the device operating with a 160 mA as the
quiescent current (ICQ). This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will
improve upon the efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity,
but will degrade the device’s efficiency. Measured data shown in the plots below represents the AP603 measured and
configured for 1.96 GHz applications. It is expected that variation of the bias current for other frequency applications will
produce similar performance results.
Thermal Rise vs. Output Power vs. Icq
Icq
R2
VPD PIN_VPD
Vcc = 28V
100
80
60
40
20
0
(mA) (Ω)
(V)
5
5
5
5
5
5
5
(V)
2.46
2.52
2.61
2.68
2.74
2.80
2.89
2.98
20 mA
20
40
80
120
160
200
260
320
4.32k
2.33k
1.24k
852
40 mA
80 mA
C7
120 mA
160 mA
200 mA
260 mA
320 mA
1000pF
W = .030”
L = 1.035”
649
L3
4.7 nH
521
100pF
100pF
C29
1.2pF
C5
3.3pF
C28
3.3pF
398
18
20
22
24
26
28
30
32
5
313
Output Power (dBm)
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 1960 MHz, 25 ˚C
Icc vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 1960 MHz, 25 ˚C
Efficiency vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 1960 MHz, 25 ˚C
400
25
20
15
10
5
-35
20 mA
40 mA
-40
-45
-50
-55
-60
-65
80 mA
120 mA
200 mA
320 mA
300
200
100
0
160 mA
260 mA
20 mA
80 mA
160 mA
260 mA
40 mA
20 mA
80 mA
160 mA
260 mA
40 mA
120 mA
200 mA
320 mA
120 mA
200 mA
320 mA
0
22
24
26
28
30
32
22
24
26
28
30
32
22
24
26
28
30
32
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Gain vs. Output Power vs. Icq
CW tone, Vcc = 28V, 1960 MHz, 25 ˚C
Output Power vs. Input Power vs. Icq
Efficiency vs. Output Power vs. Icq
CW tone, Vcc = 28V, 1960 MHz, 25 ˚C
CW tone, Vcc = 28V, 1960 MHz, 25 ˚C
14
13
12
11
10
9
38
50
20 mA
40 mA
80 mA
120 mA
200 mA
320 mA
40
30
20
10
0
34
30
26
22
160 mA
260 mA
20 mA
80 mA
160 mA
260 mA
40 mA
120 mA
200 mA
320 mA
20 mA
40 mA
80 mA
120 mA
320 mA
160 mA
200 mA
260 mA
22
26
30
34
38
10
14
18
Input Power (dBm)
IMD3 vs. Output Power vs. Icq
22
26
22
26
30
Output Power (dBm)
IMD5 vs. Output Power vs. Icq
34
38
Output Power (dBm)
OIP3 vs. Output Power vs. Icq
CW Two-tone signal, 1960 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
CW Two-tone signal, 1960 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
CW Two-tone signal, 1960 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
55
-20
-30
-40
-50
-60
-20
20 mA
40 mA
80 mA
120 mA
320 mA
20 mA
40 mA
80 mA
120 mA
320 mA
160 mA
200 mA
260 mA
-30
-40
-50
-60
-70
-80
160 mA
200 mA
260 mA
50
45
40
35
30
20 mA
40 mA
80 mA
120 mA
320 mA
160 mA
200 mA
260 mA
26
28
30
32
34
36
26
28
30
32
34
36
26
28
30
32
34
36
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
Page 8 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
2010-2025 MHz Application Circuit
Typical Performance at 25 °C at an
output power of +30 dBm
Frequency
2015 MHz
+30 dBm
12.3 dB
11 dB
Total Output Power
Power Gain
Input Return Loss
Output Return Loss
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
C7
14 dB
1000pF
-48 dBc
230 mA
15.5 %
W= 0.030”
L = 1.000”
+38.2 dBm
160 mA
+5 V
Quiescent Current, Icq
Vpd, Vbias
5.6pF
See note 4
1.8pF
See note 3
C30
3.3pF
See note 7
C25
0.8pF
See note 5
0.8pF
See note 6
See note 8
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.185” (16.3° @ 2015 MHz) from the center of C1.
4. The center of C1 is placed at 0.705” (61.9° @ 2015 MHz) from the center of C25.
5. The center of C25 is placed at 0.140” (12.3° @ 2015 MHz) from the center of C5.
6. The center of C5 is placed at 0.125” (11.0° @ 2015 MHz) from the edge of the AP603 (U1).
7. The center of C30 is placed at 0.250” (41.2° @ 2015 MHz) from the edge of the AP603 (U1).
8. The center of C19 is placed at 0.490” (43.0° @ 2015 MHz) from the center of C23.
9. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
2010-2025 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Frequency
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 ˚C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
50
40
30
20
10
0
13
12
11
10
9
0
-5
2000 MHz
2010 MHz
2025 MHz
-10
-15
-20
-25
2000 MHz
2015 MHz
2025 MHz
S11
S22
8
1.96
1.98
2
2.02
2.04
2.06
2.08
30
32
34
36
38
40
22
26
30
34
38
Frequency (GHz)
Output Power (dBm)
Output Power (dBm)
ACLR1 vs. Output Power vs. Icq
3 carrier TD-SCDMA, Vcc = 28V, 2015 MHz, 25 ˚C
ACLR vs. Output Power vs. Icq
3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 2015 MHz, 25 ˚C
Efficiency vs. Output Power vs. Frequency
3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
-40
-45
-50
-55
-60
-65
-40
-45
-50
-55
-60
-65
10
140 mA
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
2010 MHz
2015 MHz
2025 MHz
160 mA
180 mA
200 mA
8
6
4
2
0
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
ACLR1
ACLR2
20
21
22
23
24
25
26
27
20
21
22
23
24
25
26
27
20
21
22
23
24
25
26
27
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice
Page 9 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz Application Circuit (AP603-PCB2140)
Typical WCDMA Performance at 25 °C
at a channel power of +30 dBm
Frequency
2140 MHz
+30 dBm
11.8 dB
10 dB
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
C7
8.2 dB
1000pF
-50 dBc
-51 dBc
246 mA
14.6 %
W = 0.030”
L = 0.980”
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
+38.2 dBm
160 mA
+5 V
Quiescent Current, Icq
Vpd, Vbias
See note 4
0.8pF
See note 3
See note 7
See note 6
See note 5
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.185” (17.3° @ 2140 MHz) from the center of C1.
4. The center of C1 is placed at 0.860” (80.2° @ 2140 MHz) from the center of C5.
5. The center of C5 is placed at 0.085” (7.9° @ 2140 MHz) from the edge of the AP603 (U1).
6. The center of C23 is placed at 0.245” (22.9° @ 2140 MHz) from the edge of the AP603 (U1).
7. The center of C19 is placed at 0.475” (44.3° @ 2140 MHz) from the center of C23.
8. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 ˚C
Efficiency vs. Output Power vs. Frequency
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
50
40
30
20
10
0
0
-5
12
11
10
9
2110 MHz
2140 MHz
2170 MHz
-10
-15
-20
-25
2110 MHz
S11
S22
8
2140 MHz
2170 MHz
7
2
2.05
2.1
2.15
2.2
2.25
2.3
22
26
30
34
38
30
32
34
36
38
40
Frequency (GHz)
Output Power (dBm)
Output Power (dBm)
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
Efficiency vs. Output Power vs. Frequency
ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
300
275
250
225
200
175
150
25
20
15
10
5
-40
-45
-50
-55
-60
-65
2110 MHz
2140 MHz
2170 MHz
2110 MHz
2140 MHz
2170 MHz
2110 MHz
2140 MHz
2170 MHz
0
22
24
26
28
30
32
22
24
26
28
30
32
22
24
26
28
30
32
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
Page 10 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 160 mA, 2140 MHz
Icc vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 160 mA, 2140 MHz
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 160 mA, 2140 MHz
14
13
12
11
10
9
600
500
400
300
200
100
50
40
30
20
10
0
-40 ˚C
-40 ˚C
25 ˚C
85 ˚C
25 ˚C
85 ˚C
-40 ˚C
25 ˚C
85 ˚C
22
26
30
34
38
22
26
30
34
38
22
26
30
34
38
Output Power (dBm)
Output Power (dBm)
Output Power (dBm)
AM-PM vs. Input Power
2140 MHz, Vcc = 28V, Icq = 160 mA, 25 ˚C
ACLR1 vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 160 mA, 2140 MHz
Efficiency vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 160 mA, 2140 MHz
12
11
10
9
-35
-40
-45
-50
-55
-60
25
20
15
10
5
-40 ˚C
25 ˚C
85 ˚C
-40 ˚C
25 ˚C
85 ˚C
Gain
Phase
8
7
0
18
20
22
24
26
28
22
24
26
28
30
32
22
24
26
28
30
32
Input Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Gain vs. Frequency vs. Temperature
WCDMA, Vcc = 28V, Icq = 160 mA, +30 dBm Pout
ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 160 mA, 2140 MHz, 25 ˚C
Efficiency vs. Output Power vs. Vcc
WCDMA, Icq = 160 mA, 2140 MHz, 25 ˚C
25
13
12
11
10
9
-40
-45
-50
-55
-60
-65
26 V
28 V
30 V
32 V
26 V
28 V
30 V
32 V
20
15
10
5
-40 ˚C
25 ˚C
85 ˚C
0
8
2110
2130
2150
2170
22
24
26
28
30
32
22
24
26
28
30
32
Frequency (MHz)
Average Output Power (dBm)
Average Output Power (dBm)
Gain vs. Output Power vs. Vcc
CW tone, Icq = 160 mA, 2140 MHz, 25 ˚C
2-Carrier WCDMA ACLR vs. Output Power
WCDMA, 101 Config, Vcc = 28V, Icq = 160 mA, 25 ˚C
Efficiency vs. Output Power vs. Vcc
CW tone, Icq = 160 mA, 2140 MHz, 25 ˚C
50
-30
-40
-50
-60
13
ACLR2_L
ACLR1_L
ACLR_M
ACLR1_U
ACLR2_U
26 V
28 V
30 V
32 V
26 V
28 V
30 V
32 V
40
30
20
10
0
12
11
10
22
26
30
Output Power (dBm)
34
38
22
24
26
28
30
32
22
26
30
34
38
Total Average Output Power (dBm)
Output Power (dBm)
OIP3 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 160mA, 25 ˚C
IMD3 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 160mA, 25 ˚C
IMD5 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 160mA, 25 ˚C
60
55
50
45
40
35
-30
-40
-50
-60
-70
-80
-30
26 V
28 V
30 V
32 V
-40
-50
-60
-70
-80
26 V
28 V
30 V
32 V
26 V
28 V
30 V
32 V
26
28
30
32
34
36
26
28
30
32
34
36
26
28
30
32
34
36
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
Page 11 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz Application Note: Changing Icq Biasing Configurations
The AP603 can be configured to be operated with lower bias current by varying the bias-adjust resistor – R2. The
recommended circuit configurations shown previously in this datasheet have the device operating with a 160 mA as the
quiescent current (ICQ). This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will
improve upon the efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity,
but will degrade the device’s efficiency. Measured data shown in the plots below represents the AP603 measured and
configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will
produce similar performance results.
Thermal Rise vs. Output Power vs. Icq
Icq
R2
VPD PIN_VPD
Vcc = 28V
100
80
60
40
20
0
(mA) (Ω)
(V)
5
5
5
5
5
5
5
(V)
2.46
2.52
2.61
2.68
2.74
2.80
2.89
2.98
20 mA
20
40
80
120
160
200
260
320
4.32k
2.33k
1.24k
852
40 mA
80 mA
C7
120 mA
160 mA
200 mA
260 mA
320 mA
1000pF
W = 0.030”
L = 0.980”
649
521
0.8pF
398
18
20
22
24
26
28
30
32
5
313
Output Power (dBm)
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
Efficiency vs. Output Power vs. Icq
Icc vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
25
20
15
10
5
-30
400
20 mA
40 mA
80 mA
120 mA
200 mA
320 mA
-40
-50
-60
-70
300
200
100
0
160 mA
260 mA
20 mA
80 mA
160 mA
260 mA
40 mA
120 mA
200 mA
320 mA
20 mA
40 mA
80 mA
120 mA
320 mA
160 mA
200 mA
260 mA
0
22
24
26
28
30
32
22
24
26
28
30
32
22
24
26
28
30
32
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Gain vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
Output Power vs. Input Power vs. Icq
Efficiency vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
14
13
12
11
10
9
38
50
20 mA
40 mA
20 mA
40 mA
80 mA
120 mA
320 mA
80 mA
120 mA
200 mA
320 mA
40
30
20
10
0
160 mA
200 mA
260 mA
34
30
26
22
160 mA
260 mA
20 mA
80 mA
160 mA
260 mA
40 mA
120 mA
200 mA
320 mA
22
26
30
Output Power (dBm)
34
38
12
16
20
Input Power (dBm)
24
28
22
26
30
Output Power (dBm)
34
38
OIP3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
IMD3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
IMD5 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
60
55
50
45
40
35
30
-20
-30
-40
-50
-60
-70
-80
-20
-30
-40
-50
-60
-70
-80
20 mA
40 mA
80 mA
120 mA
320 mA
160 mA
200 mA
260 mA
20 mA
80 mA
160 mA
260 mA
40 mA
120 mA
20 mA
80 mA
160 mA
260 mA
40 mA
120 mA
200 mA
320 mA
200 mA
320 mA
26
28
30
32
34
36
26
28
30
32
34
36
26
28
30
32
34
36
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
Page 12 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz High Efficiency Reference Design
Targeted for Linearized Power Amplifiers
Typical WCDMA Performance at 25 °C
at a channel power of +32 dBm
Frequency
2140 MHz
+32 dBm
11.5 dB
20 dB
W-CDMA Channel Power
Power Gain
2.3 kΩ
Input Return Loss
Output Return Loss
ACLR
11 dB
C7
-34 dBc
170 mA
32.5 %
+38.5 dBm
40 mA
W = 0.030”
L = 0.980”
Operating Current, Icc
Collector Efficiency
Output P1dB
1000pF
C21
Quiescent Current, Icq
Vpd, Vbias
See note 4
+5 V
C28
3.6 pF
See note 6
C29
0.4 pF
See note 7
0.8pF
See note 3
3.6 pF
See note 5
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.185” (17.3° @ 2140 MHz) from the center of C1.
4. The center of C1 is placed at 0.875” (81.6° @ 2140 MHz) from the center of C5.
5. The center of C5 is placed at 0.070” (6.5° @ 2140 MHz) from the edge of the AP603 (U1).
6. The center of C28 is placed at 0.190” (17.7° @ 2140 MHz) from the edge of the AP603 (U1).
7. The center of C29 is placed at 0.300” (28.0° @ 2140 MHz) from the center of C28.
8. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
2110-2170 MHz High Efficiency Application Circuit Performance Plots
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
-30
-40
-50
-60
-70
-30
-40
-50
-60
-70
-30
-40
-50
-60
-70
Single-carrier WCDMA TM 1+64 DPCH,
No Clipping, PAR = 9.5 dB @ 0.01% CCDF
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
Single-carrier WCDMA TM 1+64 DPCH,
33% Clipping, PAR = 6.6 dB @ 0.01% CCDF
Uncorrected, Upper / Lower
Uncorrected, Upper / Lower
Uncorrected, Upper / Lower
DPD Corrected, Upper / Lower
DPD Corrected, Upper / Lower
DPD Corrected, Upper / Lower
22
24
26
28
30
32
22
24
26
28
30
32
22
24
26
28
30
32
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Gain vs. Output Power
CW tone, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
Icc vs. Output Power
2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
Efficiency vs. Output Power
2140 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
13
12
11
10
9
180
160
140
120
100
80
40
30
20
10
0
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
8
60
20
24
28
32
36
40
22
24
26
28
30
32
22
24
26
28
30
32
Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice
Page 13 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP603
High Dynamic Range 7W 28V HBT Amplifier
AP603-F Mechanical Information
This package is lead-free and RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Drawing
Outline Drawing
Product Marking
The component will be laser marked with an
“AP603-F” product label with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
Functional Pin Layout
Mounting Configuration / Land Pattern
Pin
1
Function
PIN_VBIAS
N/C
2, 3, 7, 8, 12, 13
4, 5, 6
RF IN
9, 10, 11
14
Backside paddle
RF Output / Vcc
PIN_VPD
GND
MSL / ESD Rating
ESD Rating: Class 1B
Value:
Test:
Standard:
Passes ꢀ500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value:
Test:
Standard:
Passes ꢀ1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MTTF vs. Junction Temperature
1.E+09
Thermal Specifications
Parameter
Rating
1.E+08
1.E+07
1.E+06
1.E+05
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Thermal Resistance, ΘJC
8.7 °C / W
Referenced from peak junction to the
center of the bottomside ground paddle
Junction Temperature, TJ
192 ºC
250 ºC
For 106 hours MTTF
Max Junction Temperature, TJ,max
For catastrophic failure
120
140
160
180
200
Junction Temperature (°C)
Specifications and information are subject to change without notice
Page 14 of 14 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
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