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AP60N03GH [A-POWER]

Low On-Resistance Fast Switching; 低导通电阻快速切换
AP60N03GH
型号： AP60N03GH
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Low On-Resistance Fast Switching
低导通电阻快速切换
文件： 总4页 (文件大小：67K)
中文：  中文翻译
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AP60N03GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low On-Resistance  
BVDSS  
RDS(ON)  
ID  
30V  
13.5mΩ  
55A  
D
S
▼ Fast Switching  
▼ Simple Drive Requirement  
▼ RoHS Compliant  
G
Description  
G
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
D
S
TO-252(H)  
TO-251(J)  
ruggedized device design, low on-resistance and cost-effectiveness.  
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP60N03GJ) is available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
55  
A
35  
A
215  
A
PD@TC=25℃  
Total Power Dissipation  
62.5  
W
Linear Derating Factor  
0.5  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
2.0  
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
Data and specifications subject to change without notice  
200602051-1/4  
AP60N03GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
0.037  
V/℃  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=10V, ID=28A  
-
11.5 13.5 mΩ  
VGS=4.5V, ID=22A  
VDS=VGS, ID=250uA  
VDS=10V, ID=28A  
VDS=30V, VGS=0V  
VDS=24V, VGS=0V  
VGS=±20V  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18  
-
20  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=150oC)  
Gate-Source Leakage  
Total Gate Charge2  
3
30  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
1
-
25  
IGSS  
Qg  
-
±100  
ID=28A  
22.4  
2.7  
14  
7.4  
81  
24  
18  
950  
440  
145  
-
-
-
-
-
-
-
-
-
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
VDS=24V  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
VGS=5V  
VDS=15V  
Rise Time  
ID=28A  
td(off)  
tf  
Turn-off Delay Time  
RG=3.3Ω,VGS=10V  
RD=0.53Ω  
Fall Time  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
VDS=25V  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
A
A
V
IS  
Continuous Source Current ( Body Diode )  
Pulsed Source Current ( Body Diode )1  
Forward On Voltage2  
VD=VG=0V , VS=1.3V  
-
-
-
-
-
-
55  
215  
1.3  
ISM  
VSD  
Tj=25℃, IS=55A, VGS=0V  
Notes:  
1.Pulse width limited by safe operating area.  
2.Pulse width <300us , duty cycle <2%.  
2/4  
AP60N03GH/J  
150  
100  
50  
200  
150  
100  
50  
10V  
8.0V  
T C =25 o C  
10V  
8.0V  
T C =150 o C  
6.0V  
6.0V  
V G =4.0V  
V
G =4.0V  
0
0
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1.8  
20  
I D =28A  
I D =28A  
1.6  
18  
16  
14  
12  
10  
T
C =25 o C  
V
G =10V  
Ω
1.4  
1.2  
1
0.8  
0.6  
-50  
0
50  
100  
150  
2
4
6
8
10  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
100  
3
2
1
0
10  
T j =150 o C  
T j =25 o C  
1
0.1  
0.01  
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP60N03GH/J  
f=1.0MHz  
14  
10000  
1000  
100  
I D =28A  
12  
V DS =16V  
10  
8
V
V
DS =20V  
DS =24V  
C iss  
6
C oss  
4
2
C rss  
0
0
5
10  
15  
20  
25  
30  
35  
40  
1
5
9
13  
17  
21  
25  
29  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
10us  
100us  
1ms  
0.1  
0.1  
0.05  
0.02  
PDM  
0.01  
t
Single Pulse  
T c =25 o C  
T
10ms  
Single Pulse  
100ms  
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
1
0.01  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
5V  
QGD  
QGS  
10%  
VGS  
td(off)  
tr  
td(on)  
tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4/4  

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