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AP60N03S [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP60N03S
型号： AP60N03S
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
文件： 总6页 (文件大小：80K)
中文：  中文翻译
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AP60N03S  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low On-Resistance  
BVDSS  
RDS(ON)  
ID  
30V  
13.5mΩ  
55A  
▼ Fast Switching  
▼ Simple Drive Requirement  
G
D
S
TO-263  
Description  
D
S
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
The TO-263 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP60N03P) is available for low-profile applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
± 20  
55  
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
35  
A
215  
62.5  
A
PD@TC=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
0.5  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
2.0  
62  
Rthj-a  
Data & specifications subject to change without notice  
200218032  
AP60N03S  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
0.037  
V/℃  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=10V, ID=28A  
-
11.5 13.5 mΩ  
VGS=4.5V, ID=22A  
VDS=VGS, ID=250uA  
VDS=10V, ID=28A  
VDS=30V, VGS=0V  
VDS=24V, VGS=0V  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18  
-
20  
3
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
30  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
j
1
Drain-Source Leakage Current (T=150oC)  
-
25  
j
IGSS  
Qg  
±100  
Gate-Source Forward Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
V =  
GS  
-
± 20V  
ID=28A  
22.4  
2.7  
14  
7.4  
81  
24  
18  
950  
440  
145  
-
-
-
-
-
-
Qgs  
Qgd  
td(on)  
tr  
VDS=24V  
VGS=5V  
VDS=15V  
ID=28A  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=0.53Ω  
VGS=0V  
-
-
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VDS=25V  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
A
A
V
IS  
Continuous Source Current ( Body Diode )  
Pulsed Source Current ( Body Diode )1  
Forward On Voltage2  
VD=VG=0V , VS=1.3V  
-
-
-
-
-
-
55  
215  
1.3  
ISM  
VSD  
Tj=25℃, IS=55A, VGS=0V  
Notes:  
1.Pulse width limited by safe operating area.  
2.Pulse width <300us , duty cycle <2%.  
AP60N03S  
150  
100  
50  
200  
150  
100  
50  
T C =150 o C  
T C =25 o C  
V
G =10V  
V
G =10V  
V G =8.0V  
V G =8.0V  
V G =6.0V  
V G =6.0V  
V G =4.0V  
V G =4.0V  
0
0
0
1
2
3
4
5
6
7
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
20  
18  
16  
14  
12  
10  
1.8  
1.6  
1.4  
1.2  
1
I D =28A  
V G =10V  
I D = 28 A  
T C =25 o C  
Ω
Ω
Ω
Ω
0.8  
0.6  
-50  
0
50  
100  
150  
3
4
5
6
7
8
9
10  
11  
T j , Junction Temperature ( o C)  
V GS (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
AP60N03S  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
T c , Case Temperature ( o C)  
T c , Case Temperature ( o C)  
Fig 5. Maximum Drain Current v.s.  
Case Temperature  
Fig 6. Typical Power Dissipation  
1
1000  
100  
10  
DUTY=0.5  
0.2  
0.1  
10us  
0.1  
100us  
0.05  
0.02  
PDM  
SINGLE PULSE  
t
0.01  
1ms  
T
Duty factor = t/T  
10ms  
T c =25 o C  
Peak Tj = PDM x Rthjc + TC  
100ms  
Single Pulse  
1
0.01  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Pulse Width (s)  
V DS (V)  
Fig 7. Maximum Safe Operating Area  
Fig 8. Effective Transient Thermal Impedance  
AP60N03S  
f=1.0MHz  
10000  
1000  
100  
14  
12  
10  
8
I D =28A  
V DS =16V  
DS =20V  
V
V DS =24V  
Ciss  
Coss  
Crss  
6
4
2
0
0
5
10  
15  
20  
25  
30  
35  
40  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS (V)  
Fig 9. Gate Charge Characteristics  
Fig 10. Typical Capacitance Characteristics  
100  
3
2
1
0
10  
T j =150 o C  
T j =25 o C  
1
0.1  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD (V)  
Fig 11. Forward Characteristic of  
Reverse Diode  
Fig 12. Gate Threshold Voltage v.s.  
Junction Temperature  
AP60N03S  
VDS  
RD  
90%  
VDS  
TO THE  
OSCILLOSCOPE  
D
S
0.5x RATED VDS  
RG  
G
10%  
VGS  
+
-
10V  
VGS  
td(off)  
td(on) tr  
tf  
Fig 13. Switching Time Circuit  
Fig 14. Switching Time Waveform  
VG  
5V  
VDS  
QG  
TO THE  
OSCILLOSCOPE  
D
S
0.8 x RATED VDS  
QGD  
QGS  
G
VGS  
+
1~ 3 mA  
IG  
-
ID  
Q
Charge  
Fig 15. Gate Charge Circuit  
Fig 16. Gate Charge Waveform  

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