AP60L02GS [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP60L02GS |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总6页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP60L02GS/P
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
25V
12mΩ
50A
D
S
▼ Simple Drive Requirement
▼ Fast Switching
G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-263(S)
TO-220(P)
S
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60L02GP) is available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
25
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
± 20
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
50
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
32
180
62.5
0.5
A
A
PD@TC=25℃
Total Power Dissipation
W
Linear Derating Factor
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-case
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
2.0
62
Rthj-amb
Data & specifications subject to change without notice
200218032
AP60L02GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
25
-
-
0.037
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=25A
-
12
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=25A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
26
3
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
30
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
j
1
Drain-Source Leakage Current (T=150oC)
-
25
±100
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
V =
GS
-
± 20V
ID=25A
21
2.8
16
8
Qgs
Qgd
td(on)
tr
VDS=20V
VGS=5V
VDS=15V
ID=20A
-
-
-
-
-
-
-
75
22
20
605
415
195
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.75Ω
VGS=0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage2
VD=VG=0V , VS=1.26V
-
-
-
-
-
-
50
ISM
VSD
180
1.26
Tj=25℃, IS=50A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP60L02GS/P
150
100
50
250
200
150
100
50
T C =150 o C
T C =25 o C
V G =10V
V G =8.0V
V G =10V
V
V
G =8.0V
G =6.0V
V
G =6.0V
V G =4.0V
V G =4.0V
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
1.6
1.4
1.2
1
26
24
22
20
18
16
14
12
10
8
I D =25A
V G =10V
I D =25A
T c =25 ℃
Ω
Ω
Ω
Ω
0.8
0.6
2
3
4
5
6
7
8
9
10
11
-50
0
50
100
150
V GS (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP60L02GS/P
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
25
50
75
100
125
150
0
50
100
150
T c ,Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
1
1000
100
10
DUTY=0.5
0.2
10us
0.1
0.05
100us
0.1
0.02
0.01
PDM
t
1ms
SINGLE PULSE
T
Duty factor = t/T
10ms
T c =25 o C
Peak Tj = PDM x Rthjc + TC
100ms
Single Pulse
1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
1
100
V D1S0(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP60L02GS/P
f=1.0MHz
10000
1000
100
16
14
12
10
8
I D =25A
V DS =12V
DS =16V
V
V
DS =20V
Ciss
Coss
Crss
6
4
2
0
0
10
20
30
40
50
1
6
11
16
21
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
2
1
0
100
10
T j =150 o C
T j =25 o C
1
0.1
-50
0
50
100
150
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
T j , Junction Temperature( o C)
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
AP60L02GS/P
VDS
RD
90%
VDS
TO THE
OSCILLOSCOPE
D
S
0.6x RATED VDS
RG
G
10%
VGS
+
-
10V
VGS
td(off)
td(on) tr
tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
5V
VDS
QG
TO THE
OSCILLOSCOPE
D
S
0.8 x RATED VDS
QGD
QGS
G
VGS
+
1~ 3 mA
IG
-
ID
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
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