M7002TTD03 [WILLAS]
WBFBP-03A Plastic-Encapsulate MOSFETS; WBFBP - 03A塑封装的MOSFET
| 型号： | M7002TTD03 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | WBFBP-03A Plastic-Encapsulate MOSFETS |
| 文件： | 总2页 (文件大小：365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
M7002TTD03
WBFBP-03A Plastic-Encapsulate MOSFETS
D
MOSFET( N-Channel )
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
TOP
DESCRIPTION
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400mA DC
and can deliver pulsed currents up to 2A. These products are particularly suited
for low voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
G
S
S
D
1. GATE
2. SOURCE
3. DRAIN
BACK
G
FEATURES
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
APPLICATION
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 72
D
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
72
G
S
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
60
Units
VDS
Drain-Source Voltage
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Maximum Drain Current - Pulsed
Power Dissipation
115
150
mA
mW
℃/W
℃
PD
RθJA
TJ
Thermal Resistance from Junction to Ambient
Junction Temperature
833
150
Tstg
Storage Temperature
-55-150
℃
2012-09
WILLAS ELECTRONIC CORP.
WILLAS
M7002TTD03
WBFBP-03A Plastic-Encapsulate MOSFETS
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
60
60
1
Typ
Max
Unit
VGS=0V,ID=10μA
Drain-Source Breakdown Voltage
V(BR)DSS
V
VGS=0V,ID=3mA
Gate-Threshold Voltage*
V(GS)th
lGSS
VDS=VGS, ID=250μA
VDS=0V, VGS=±25V
VDS=60V, VGS=0V
VDS=60V,VGS=0V,Tj=125℃
VGS=10V, VDS=7V
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VDS=10V, ID=200mA
IS=115mA, VGS=0V
Gate-Body Leakage
±100
1
nA
Zero Gate Voltage Drain Current
IDSS
μA
500
On-state Drain Current*
ID(ON)
500
1
mA
7.2
7.2
Drain-Source On-Resistance*
RDS(on)
Ω
1
3.75
0.375
Drain-Source On- Voltage *
VDS(on)
V
Forward Tranconductance*
Diode Forward Voltage
Input Capacitance
gfs
80
ms
V
VSD
Ciss
Coss
Crss
Qg
1.2
50
25
5
VDS=25V, VGS=0V,f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS =30V, VGS =10V,
ID=250mA
1
nC
Gate-Source Charge
Gate-Drain Charge
Qgs
Qd
25
5
*Pulse test , pulse width≤300μs, duty cycle≤2% .
SWITCHING TIME
td(on)
td(off)
VDD=25V,RG=25Ω
ID=500mA,VGEN=10V
RL=50Ω
20
40
Turn-on Time
ns
Turn-off Time
2012-09
WILLAS ELECTRONIC CORP.
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