BAS16TW1T1 [WILLAS]
SOT-363 Plastic-Encapsulate Diodes; SOT- 363塑封装二极管
| 型号： | BAS16TW1T1 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | SOT-363 Plastic-Encapsulate Diodes |
| 文件： | 总3页 (文件大小：368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
BAS16TW1T1
SOT-363 Plastic-Encapsulate Diodes
SWITCHING DIODES
SOT-363
FEATURES
z
z
z
z
z
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Weight:0.05g
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Moisture Sensitivity Level 1
z
MARKING: BAS16TW1T1: KA2·
Maximum Ratings @TA=25℃
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
100
V
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
VRRM
VRWM
VR
75
V
DC Blocking
Voltage
RMS Reverse Voltage
VR(RMS)
IFM
53
300
V
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=1.0μs
@=1.0s
mA
mA
IO
150
2.0
IFSM
A
1.0
Power Dissipation
Pd
RθJA
Tj
200
mW
K/W
℃
Thermal Resistance Junction to Ambient
Junction temperature
625
150
Storage temperature
TSTG
-65~+150
℃
Electrical Ratings @TA=25℃
Parameter
Symbol
Min.
Typ.
Max. Unit
Conditions
IR=10μA
Reverse Breakdown Voltage
V (BR) R
VF1
VF2
VF3
VF4
IR1
75
V
V
0.715
0.855
1.0
1.25
1
IF=1mA
V
IF=10mA
Forward voltage
V
IF=50mA
V
IF=150mA
μA
nA
pF
VR=75V
Reverse current
IR2
25
VR=20V
Capacitance between terminals
Reverse Recovery Time
CT
2
VR=0V,f=1MHz
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
trr
4
ns
2012-12
WILLAS ELECTRONIC CORP.
WILLAS
BAS16TW1T1
SOT-363 Plastic-Encapsulate Diodes
Typical Characteristics
2012-12
WILLAS ELECTRONIC CORP.
WILLAS
BAS16TW1T1
SOT-363 Plastic-Encapsulate Diodes
Outline Drawing
SOT-363
.087(2.20)
.071(1.80)
.030(0.75)
.021(0.55)
.010(0.25)
.003(0.08)
.056(1.40)
.047(1.20)
.004(0.10)MAX.
.016(0.40)
.004(0.10)
Dimensions in inches and (millimeters)
Rev.D
2012-12
WILLAS ELECTRONIC CORP.
相关型号：
BAS16TWQ-13R-F
Rectifier Diode, 3 Element, 0.15A, 75V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-6
DIODES
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