BAS16TW_11 [SECOS]

0.15A , 100V Surface Mount Switching Diode Array; 0.15A , 100V表面贴装开关二极管阵列
BAS16TW_11
型号: BAS16TW_11
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

0.15A , 100V Surface Mount Switching Diode Array
0.15A , 100V表面贴装开关二极管阵列

二极管 开关
文件: 总2页 (文件大小:154K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS16TW  
0.15A , 100V  
Surface Mount Switching Diode Array  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-363  
FEATURES  
Fast Switching Speed  
Ultra-Small Surface Mount Package  
High Conductance Power dissipation  
A
E
L
MECHANICAL DATA  
B
Case: SOT-363, Molded Plastic  
Terminals: Solderable per MIL-STD-202, Method 208  
Polarity: See Diagrams Below  
Weight: 0.006 grams (approx.)  
Mounting Position: Any  
F
C
H
J
K
D G  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
2.20  
2.45  
1.35  
1.10  
Min.  
Max.  
MARKING CODE  
A
B
C
D
2.00  
2.15  
1.15  
0.90  
G
H
J
0.100 REF.  
0.525 REF.  
0.08  
0.15  
KA2  
K
8°  
E
F
1.20  
0.15  
1.40  
0.35  
L
0.650 TYP.  
PACKAGE INFORMATION  
Package  
SOT-363  
MPQ  
3K  
Leader Size  
7 inch  
MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
Non-Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRM  
VRWM  
VR  
100  
V
V
75  
75  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
53  
V
Average Rectified out Current  
150  
mA  
@T=1μs  
2
Peak Forward Surge Current  
IFSM  
A
@T=1s  
1
200  
Power Dissipation  
PD  
mW  
°C / W  
°C  
Thermal Resistance Junction to Ambient Air  
Storage Temperature  
RθJA  
625  
TJ, TSTG  
150, -55~150  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
12-Oct-2011 Rev. C  
Page 1 of 2  
BAS16TW  
0.15A , 100V  
Surface Mount Switching Diode Array  
Elektronische Bauelemente  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Max.  
Unit  
Test Condition  
Reverse Breakdown Voltage  
V(BR)  
75  
-
-
0.715  
0.855  
1
V
IR=10μA  
IF=1mA  
-
IF=10mA  
IF=50mA  
IF=150mA  
VR=75V  
Forward Voltage  
VF  
V
-
-
1.25  
1
-
μA  
nA  
pF  
Reverse Current  
IR  
-
25  
VR=20V  
Capacitance between Terminals  
Reverse Recovery Time  
CT  
-
2
VR=0V, f=1MHz  
IF= IR=10mA, Irr=0.1 x IR,  
TRR  
-
4
ns  
RL=100  
RATINGS AND CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
12-Oct-2011 Rev. C  
Page 2 of 2  

相关型号:

BAS16TW_13

200mW Switching Diode
MCC

BAS16TW_16

SURFACE MOUNT SWITCHING DIODES
PANJIT

BAS16TW_R1_00001

SURFACE MOUNT SWITCHING DIODES
PANJIT

BAS16TW_R2_00001

SURFACE MOUNT SWITCHING DIODES
PANJIT

BAS16TW_S1_00001

SURFACE MOUNT SWITCHING DIODES
PANJIT

BAS16T_09

SURFACE MOUNT FAST SWITCHING DIODE
DIODES

BAS16T_1

SURFACE MOUNT FAST SWITCHING DIODE
DIODES

BAS16T_10

Surface Mount Switching Diodes
WEITRON

BAS16T_13

150mW 85Volt Switching Diode
MCC

BAS16U

Silicon Switching Diode
INFINEON
INFINEON
INFINEON