BAS16T_10 [WEITRON]
Surface Mount Switching Diodes; 表面贴装开关二极管
| 型号： | BAS16T_10 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount Switching Diodes |
| 文件： | 总3页 (文件大小：1387K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16T
Surface Mount Switching Diodes
SWITCHING DIODES
150 mAMPERES
75 VOLTS
P b
Lead(Pb)-Free
Features:
* Ultra-Small Surface Mount Package
* Fast switching Speed
* For General Purpose Switching Applications
* High Conductance
3
1
2
Mechanical Data:
SOT-523(SC-75)
* Terminals: Solderable per MIL-STD-202, Method 208
* Polarity: See Diagrams Page.2
* Marking: See Diagrams Page.2
* Weight: 0.002 grams (approx)
Unit:mm
SOT-523 Outline Dimensions (SC-75)
SC-75
A
Dim
A
B
C
D
Min
0.30
0.70
1.45
-
0.15
0.80
1.40
0.00
0.70
0.37
0.10
Max
0.50
0.90
1.75
0.50
0.40
1.00
1.80
0.10
1.00
0.48
0.25
B
C
TOP VIEW
D
G
E
E
G
H
J
K
L
H
K
L
J
M
M
WEITRON
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06-Sep-10
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BAS16T
Maximum Ratings (T =25°C Unless otherwise noted)
A
Symbol
Unit
Characteristic
Value
V
RM
V
100
Non-Repetitive Peak reverse voltage
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RRM
V
RWM
V
75
V
R
V
RMS Reverse Voltage
53
300
150
R(RMS)
V
I
mA
mA
FM
Forward Continuous Current
Average Rectified Output Current
I
O
2.0
1.0
Peak Forward Surge Current
@t=1.0µS
@t=1.0S
A
I
FSM
Power Dissipation
Thermal Resistance
P
d
200
625
150
mW
R
θJA
˚C/W
T
°C
°C
Junction temperature
j
T
-65 to + 150
Storage Temperature Range
STG
Electrical Characteristics (T =25˚C Unless otherwise noted)
A
Symbol
Characteristic
Min
Max
Unit
Reverse Breakdown Voltage
R
-
V
75
V
(BR)R
I =1µA
Forward Voltage
I =1.0mA
F
I =10mA
F
715
855
-
V
F
mV
I =50mA
F
I =150mA
F
1000
1250
Total Capacitance
R
-
-
2
C
I
P
F
T
V =0V, f=1.0MHz
Reverse Current
V =75V
1.0
0.025
R
µA
nS
R
V =20V
R
Reverse Recover Time
4.0
-
T
rr
I =I =10mA, I =0.1 x I , R =100Ω
F
R
rr
R
L
Device Marking
Item
Marking
Eqivalent Circuit diagram
3
1
BAS16T
A2
WEITRON
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06-Sep-10
BAS16T
Typical Characteristics
BAS16T
WEITRON
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06-Sep-10
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INFINEON
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