MUN5211 [WEITRON]
NPN Silicon Bias Resistor Transistor; NPN硅偏置电阻晶体管
| 型号： | MUN5211 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | NPN Silicon Bias Resistor Transistor |
| 文件： | 总9页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN5211 Series
NPN Silicon Bias Resistor Transistor
3
R1
R2
P b
Lead(Pb)-Free
1
2
SOT-323(SC-70)
( T =25 C unless otherwise noted)
A
Maximum Ratings
Rating
Collector-Emitter Voltage
Symbol
Value
50
Unit
Vdc
Vdc
V
CEO
V
50
Collector-Base Voltage
CBO
I
C
Collector Current-Continuous
mAdc
100
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
P
202
1.6
D
mW
mW/ C
(1)T =25 C
A
Derate above 25 C
R
618
C/W
Thermal Resistance, Junction to Ambient
(1)
JA
T
-55 to +150
Junction and Storage,Temperature Range
J,Tstg
C
1.FR-4 @ minimum pad
2.FR-4 @ 1.0 1.0 inch Pad
Device Marking and Resistor Values
Device
Marking
R1(K)
R2(K)
Device
Marking
R1(K)
R2(K)
10
22
47
10
10
MUN5211
8A
8B
8C
8D
8E
8F
10
22
47
47
2.2
4.7
4.7
22
2.2
100
47
MUN5231
8H
8J
8K
8L
8M
8N
8P
2.2
4.7
47
47
47
100
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
MUN5232
MUN5233
MUN5234
MUN5235
MUN5236
MUN5237
4.7
1.0
8G
22
1.0
WEITRON
http://www.weitron.com.tw
1/9
Rev.A 30-Dec-05
MUN5211 Series
WEITRON
(TA=25 C Unless Otherwise noted)
Electrical Characteristics
Typ
Characteristics
Symbol
Unit
Min
Max
Off Characteristics
Collector-Emitter Breakdown Voltage
-
-
-
V(BR)CEO
V(BR)CBO
50
50
-
V
V
(I =2.0mA, I =0)
C
B
Collector-Base Breakdown Voltage
(I =10 uA ,I =0)
-
C
E
Collector-Base Cutoff Voltage
(V =50 V, I =0)
ICBO
-
nA
100
CB
E
Collector-Emitter Cutoff Current
(I =50V, I =0)
ICEO
IEBO
-
-
500
nA
CE
B
Emitter-Base Cutoff Current
(V =6.0V, I =0)
EB
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MUN5211
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5236
MUN5237
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mA
WEITRON
http://www.weitron.com.tw
2/9
Rev.A 30-Dec-05
MUN5211 Series
WEITRON
(TA=25 C Unless Otherwise noted)
Electrical Characteristics
Typ
Characteristics
Symbol
Unit
Min
Max
(3)
On Characteristics
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MUN5211
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5236
MUN5237
60
35
60
80
DC Current Gain
h
FE
100
140
140
350
350
5.0
(V =10V, I =5.0mA)
CE
C
80
160
160
3.0
8.0
15
80
80
80
80
15
30
200
150
140
150
140
80
Collector-Emitter Saturation Voltage
(I =10mA, I =0.3mA)
-
-
Vdc
Vdc
V
0.25
CE(sat)
B
C
(I =10mA, I =5mA)
MUN5230/MUN5231
B
C
(I =10mA, I =1mA)
MUN5215/MUN5216
B
C
MUN5232/MUN5233/MUN5234
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Output Voltage(on)
(V =5.0V, V =2.5V, R =1.0k
MUN5211
MUN5212
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5213
MUN5236
MUN5237
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
V
OL
)
CC
L
B
(V =5.0V, V =3.5V, R =1.0k
)
)
)
L
B
CC
(V =5.0V, V =5.5V, R =1.0k
L
B
B
CC
(V =5.0V, V =4.0V, R =1.0k
L
CC
Output Voltage(off)
(V =5.0V, V =0.5V, R =1.0k
-
-
4.9
V
OH
Vdc
)
L
B
B
B
CC
(V =5.0V, V =0.050V, R =1.0k
)
MUN5230
MUN5215/MUN5216/MUN5233
L
CC
(V =5.0V, V =0.25V, R =1.0k
)
L
CC
3. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%
WEITRON
http://www.weitron.com.tw
3/9
Rev.A 30-Dec-05
MUN5211 Series
WEITRON
(TA=25 C Unless Otherwise noted)
Electrical Characteristics
Typ
Characteristics
Symbol
Unit
Min
Max
On Characteristics
Input Resistor
MUN5211
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5236
MUN5237
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k
R1
15.4
1.54
70
28.6
2.86
130
61.1
32.9
Resistor Ratio MUN5211/MUN5212
MUN5213/MUN5236
MUN5214
R1/R2
1.0
0.21
-
0.8
0.17
-
1.2
0.25
-
MUN5215/MUN5216
1.0
0.1
0.47
0.047
2.1
0.8
1.2
MUN5230/MUN5231/MUN5232
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
MUN5233
MUN5234
MUN5235
MUN5237
MUN5211
1
0.1
350
300
250
200
150
100
I /I = 10
C
B
T = -25 C
A
25 C
75 C
0.01
R
= 403 C/W
50
50
0
θ
JA
0.001
- 50
0
100
150
0
20
40
50
T , AMBIENT TEMPERA
A
TURE ( C)
I , COLLECTOR CURRENT (mA)
C
FIG 1. Derating Curve
FIG.2 V
versus I
C
CE(sat)
WEITRON
http://www.weitron.com.tw
4/9
Rev.A 30-Dec-05
MUN5211 Series
WEITRON
1000
4
3
f = 1 M Hz
V
= 10 V
CE
I = 0 V
E
T = 75 C
A
T = 25 C
A
25 C
-25 C
100
2
1
0
10
1
10
100
0
10
20
30
40
50
I , COLLECTOR CURRENT (m A)
C
V , REVERSE BIAS VOL TAGE (VOLTS)
R
FIG.3 DC Current Gain
FIG.4 Output Capacitance
100
10
25 C
75 C
V = 0.2 V
O
T = -25 C
A
T = -25 C
A
10
1
25 C
75 C
1
0.1
0.01
0.001
V = 5 V
O
0.1
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
V , INPUT VOLTAGE (VOLTS)
in
I , COLLECTOR CURRENT (mA)
C
FIG.5 Output Current versus Input V
oltage
FIG.6 Input V
oltage versus Output Current
MUN5212
1
1000
V
CE
= 10 V
I /I = 10
C
B
T = 75 C
A
25 C
25 C
T = -25 C
A
0.1
-25 C
75 C
100
0.01
0.001
10
1
10
I , COLLECTOR CURRENT (m A)
100
0
20
40
50
I , COLLECTOR CURRENT (m A)
C
C
FGI.7 V
CE(sat)
versus I
C
FIG.8 DC Current Gain
WEITRON
5/9
Rev.A 30-Dec-05
http://www.weitron.com.tw
MUN5211 Series
WEITRON
4
3
2
1
0
100
10
1
75 C
25 C
f = 1 M Hz
I = 0 V
T = 25 C
A
T = -25 C
A
E
0.1
0.01
V = 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOL TAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
FIG.9 Output Capacitance
FIG.10 Output Current versus Input V
oltage
MUN5213
10
100
I /I = 10
V = 0.2 V
O
C
B
T = -25 C
A
1
10
1
25 C
75 C
25 C
75 C
T = -25 C
A
0.1
0.01
0.1
0
20
I , COLLECTOR CURRENT (m A)
40
50
0
10
20
30
40
50
C
I , COLLECTOR CURRENT (mA)
C
FIG.12 V
versus I
C
FIG.11 Input Voltage versus Output Current
CE(sat)
1
1000
100
10
V
= 10 V
f = 1 MHz
I = 0 V
CE
E
0.8
T = 25 C
A
T = 75 C
A
25 C
-25 C
0.6
0.4
0.2
0
1
10
100
0
10
20
30
40
50
I , COLLECTOR CURRENT (m A)
C
V , REVERSE BIAS VOLTAGE (VOLTS)
R
FIG.13 DC Current Gain
FIG.14 Output Capacitance
WEITRON
http://www.weitron.com.tw
6/9
Rev.A 30-Dec-05
MUN5211 Series
WEITRON
100
10
1
100
25 C
75 C
V = 0.2 V
O
T = -25 C
A
T = -25 C
A
10
1
25 C
75 C
0.1
0.01
V = 5 V
O
0.1
0.001
0
10
20
30
40
50
0
1
0
2
4
6
8
I , COLLECTOR CURRENT (mA)
C
V , INPUT VOLTAGE (VOLTS)
in
FIG.16 Input Voltage versus Output Current
FIG.15 Output Current versus Input Voltage
MUN5214
1
300
250
200
150
T = 75 C
A
V
CE
= 10
I /I = 10
C
B
T = -25 C
A
25 C
25 C
75 C
0.1
0.01
-25 C
100
50
0
0.001
0
20
40
60
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
80
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
FIG.18 DC Current Gain
FIG.17 V
versus I
C
CE(sat)
4
3.5
3
100
10
1
f = 1 MHz
T = 75 C
25 C
A
l = 0 V
E
T = 25 C
A
-25 C
2.5
2
1.5
1
0.5
0
V = 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
FIG.19 Output Capacitance
FIG.20 Output Current versus Input Voltage
WEITRON
http://www.weitron.com.tw
7/9
Rev.A 30-Dec-05
MUN5211 Series
WEITRON
10
V = 0.2 V
O
T ?=?-25C
A
25 C
75 C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
FIG.21 Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
8/9
Rev.A 30-Dec-05
MUN5211 Series
WEITRON
SOT-323 Outline Demensions
Unit:mm
A
SOT-323
Dim
A
B
C
D
Min
0.30
1.15
2.00
-
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
B
C
TOP VIEW
D
G
E
0.30
1.20
1.80
0.00
0.80
0.42
0.10
E
G
H
J
K
L
H
K
L
M
J
M
WEITRON
http://www.weitron.com.tw
9/9
Rev.A 30-Dec-05
相关型号：
MUN5211DW1T2
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
MOTOROLA
MUN5211DW1T3
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, CASE 419B-01, 6 PIN
MOTOROLA
©2020 ICPDF网 联系我们和版权申明