MUN5211DW1T1G_09 [ONSEMI]
Dual Bias Resistor Transistors; 双偏置电阻晶体管
| 型号： | MUN5211DW1T1G_09 |
| 厂家： | 
ONSEMI |
| 描述： | Dual Bias Resistor Transistors |
| 文件： | 总20页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN5211DW1T1G Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5211DW1T1G
series, two BRT devices are housed in the SOT−363 package which is
ideal for low power surface mount applications where board space is
at a premium.
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(3)
(2)
(1)
R
1
R
2
Q
1
Q
2
R
2
R
1
Features
(4)
(5)
(6)
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
MAXIMUM RATINGS
(T = 25°C unless otherwise noted, common for Q and Q )
A
SOT−363
CASE 419B
STYLE 1
1
2
Rating
Symbol
Value
50
Unit
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
V
CBO
CEO
50
Vdc
MARKING DIAGRAM
I
C
100
mAdc
6
THERMAL CHARACTERISTICS
xx M G
Characteristic
(One Junction Heated)
G
Symbol
Max
Unit
1
Total Device Dissipation
P
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
D
T = 25°C
A
xx
M
G
= Device Code
= Date Code*
= Pb−Free Package
Derate above 25°C
mW/°C
°C/W
Thermal Resistance,
Junction-to-Ambient
R
q
670 (Note 1)
490 (Note 2)
JA
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
P
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
D
T = 25°C
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
A
Derate above 25°C
mW/°C
°C/W
°C/W
°C
Thermal Resistance,
Junction-to-Ambient
R
q
493 (Note 1)
325 (Note 2)
JA
Preferred devices are recommended choices for future use
and best overall value.
Thermal Resistance,
Junction-to-Lead
R
q
188 (Note 1)
208 (Note 2)
JL
Junction and Storage Temperature
T , T
J
−55 to +150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
October, 2009 − Rev. 8
MUN5211DW1T1/D
MUN5211DW1T1G Series
DEVICE MARKING AND RESISTOR VALUES
†
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN5211DW1T1G
SOT−363
(Pb−Free)
7A
10
10
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
SOT−363
(Pb−Free)
7B
7C
7D
7E
7F
7G
7H
7J
22
47
22
47
47
∞
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
10
SOT−363
(Pb−Free)
10
SOT−363
(Pb−Free)
4.7
1.0
2.2
4.7
4.7
22
∞
SOT−363
(Pb−Free)
1.0
2.2
4.7
47
47
47
100
22
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
7K
7L
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
7M
7N
7P
2.2
100
47
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MUN5211DW1T1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
EBO
EB
C
Collector-Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown Voltage (Note 3) (I = 2.0 mA, I = 0)
C
B
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
MUN5211DW1T1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
DC Current Gain
(V = 10 V, I = 5.0 mA)
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
140
140
350
350
5.0
CE
C
80
160
160
3.0
8.0
15
80
80
80
80
15
30
200
150
140
150
140
80
Collector-Emitter Saturation Voltage
(I = 10 mA, I = 0.3 mA)
V
Vdc
CE(sat)
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5237DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
C
B
(I = 10 mA, I = 5 mA)
C
B
(I = 10 mA, I = 1 mA)
C
B
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
Vdc
OL
MUN5211DW1T1G
MUN5212DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5213DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
CC
B
L
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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4
MUN5211DW1T1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q ) (Continued)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (off)
V
Vdc
OH
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5230DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
CC
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
CC
B
L
Input Resistor
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k W
15.4
1.54
70
28.6
2.86
130
61.1
32.9
Resistor Ratio MUN5211DW1T1G/MUN5212DW1T1G/
MUN5213DW1T1G/MUN5236DW1T1G
MUN5214DW1T1G
R1/R2
0.8
0.17
−
1.0
0.21
−
1.2
0.25
−
MUN5215DW1T1G/MUN5216DW1T1G
MUN5230DW1T1G/MUN5231DW1T1G/MUN5232DW1T1G
0.8
1.0
1.2
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5237DW1T1G
0.055
0.38
0.038
1.7
0.1
0.185
0.56
0.056
2.6
0.47
0.047
2.1
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ALL MUN5211DW1T1G SERIES DEVICES
300
250
200
150
100
R
q
= 833°C/W
50
0
JA
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
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5
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1G
1
1000
I /I = 10
C B
V
= 10 V
T ꢀ=ꢀ-25°C
A
CE
25°C
T ꢀ=ꢀ75°C
A
25°C
0.1
-25°C
75°C
100
0.01
0.001
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
25°C
75°C
f = 1 MHz
I = 0 V
E
T ꢀ=ꢀ-25°C
A
T = 25°C
A
1
0.1
2
1
0
0.01
0.001
V
= 5 V
9
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
= 0.2 V
T ꢀ=ꢀ-25°C
A
O
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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6
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212DW1T1G
1000
1
V
= 10 V
CE
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
25°C
T ꢀ=ꢀ-25°C
A
0.1
-25°C
75°C
100
0.01
10
0.001
1
10
100
0
20
40
50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
I = 0 V
T ꢀ=ꢀ-25°C
A
E
T = 25°C
A
0.1
0.01
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢀ=ꢀ-25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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7
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1G
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
-25°C
25°C
100
T ꢀ=ꢀ-25°C
A
75°C
0.1
0.01
10
0
20
I , COLLECTOR CURRENT (mA)
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
I = 0 V
75°C
E
T ꢀ=ꢀ-25°C
A
0.8
T = 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢀ=ꢀ-25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
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8
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5214DW1T1G
1
300
T ꢀ=ꢀ75°C
A
V
= 10
I /I = 10
C B
CE
T ꢀ=ꢀ-25°C
250
200
150
100
A
25°C
25°C
75°C
0.1
-25°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4
3.5
3
100
10
1
f = 1 MHz
l = 0 V
T ꢀ=ꢀ75°C
25°C
A
E
T = 25°C
A
-25°C
2.5
2
1.5
1
V
= 5 V
O
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V
= 0.2 V
O
T ꢀ=ꢀ-25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
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9
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215DW1T1G
1
1000
V
= 10 V
CE
I /I = 10
C
B
75°C
T = −25°C
A
75°C
100
0.1
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
100
10
1
4.5
4
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
3.5
3
25°C
2.5
2
T = −25°C
A
0.1
1.5
1
0.01
V
= 5 V
O
0.5
0.001
0
0
0
1
2
3
4
5
6
7
8
9
10
5
10 15 20 25 30 35 40 45 50
V , INPUT VOLTAGE (VOLTS)
in
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 26. Input Voltage versus Output Current
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10
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5216DW1T1G
1
1000
V
= 10 V
75°C
CE
I /I = 10
C
B
T = −25°C
A
75°C
25°C
100
0.1
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
100
10
1
4.5
4
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
25°C
3.5
3
T = −25°C
A
2.5
2
0.1
1.5
1
0.01
V
= 5 V
9
O
0.5
0.001
0
0
0
1
2
3
4
5
6
7
8
10
5
10 15 20 25 30 35 40 45 50
V , INPUT VOLTAGE (VOLTS)
in
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 31. Input Voltage versus Output Current
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11
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230DW1T1G
100
1
I /I = 10
C
B
75°C
0.1
75°C
−25°C
10
25°C
25°C
0.01
T = −25°C
A
V
= 10 V
CE
0.001
1
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
4.5
4
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
3.5
3
25°C
2.5
2
T = −25°C
A
0.1
1.5
1
0.01
V
= 5 V
O
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10
T = −25°C
A
75°C
1
25°C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 36. Input Voltage versus Output Current
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12
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5231DW1T1G
100
1
I /I = 10
C
B
75°C
0.1
25°C
75°C
−25°C
10
25°C
0.01
T = −25°C
A
V
= 10 V
CE
0.001
1
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 37. VCE(sat) versus IC
Figure 38. DC Current Gain
4.5
4
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
3.5
3
25°C
2.5
2
T = −25°C
A
0.1
1.5
1
0.01
V
= 5 V
O
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10
T = −25°C
A
75°C
1
25°C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 41. Input Voltage versus Output Current
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13
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232DW1T1G
1000
1
V
= 10 V
CE
I /I = 10
C
B
75°C
75°C
100
0.1
−25°C
25°C
25°C
T = −25°C
A
0.01
10
1
0.001
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 42. VCE(sat) versus IC
Figure 43. DC Current Gain
6
5
4
3
2
1
100
10
1
f = 1 MHz
= 0 V
T = 25°C
A
75°C
I
E
25°C
T = −25°C
A
0.1
0.01
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 44. Output Capacitance
Figure 45. Output Current versus Input Voltage
10
T = −25°C
A
1
75°C
25°C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 46. Input Voltage versus Output Current
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14
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233DW1T1G
1000
1
V
= 10 V
CE
I /I = 10
C
B
75°C
T = −25°C
A
100
0.1
75°C
25°C
−25°C
25°C
0.01
10
1
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 47. VCE(sat) versus IC
Figure 48. DC Current Gain
4
3.5
3
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
25°C
2.5
2
T = −25°C
A
0.1
1.5
1
0.01
V
= 5 V
0.5
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 49. Output Capacitance
Figure 50. Output Current versus Input Voltage
10
T = −25°C
A
1
75°C
25°C
V
= 0.2 V
20
O
0.1
0
5
10
15
25
I , COLLECTOR CURRENT (mA)
C
Figure 51. Input Voltage versus Output Current
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15
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5234DW1T1G
1000
1
V
= 10 V
CE
I /I = 10
C
B
75°C
100
0.1
T = −25°C
A
75°C
25°C
−25°C
25°C
0.01
10
1
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 52. VCE(sat) versus IC
Figure 53. DC Current Gain
TBD
TBD
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
TBD
I , COLLECTOR CURRENT (mA)
C
Figure 56. Input Voltage versus Output Current
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16
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235DW1T1G
1000
1
V
= 10 V
CE
I /I = 10
C
B
75°C
75°C
100
0.1
T = −25°C
A
25°C
−25°C
25°C
0.01
10
1
0.001
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 57. VCE(sat) versus IC
Figure 58. DC Current Gain
4.5
4
100
10
1
25°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
3.5
3
75°C
2.5
2
T = −25°C
A
0.1
1.5
1
0.01
V
= 5 V
O
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 59. Output Capacitance
Figure 60. Output Current versus Input Voltage
10
75°C
1
T = −25°C
A
25°C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 61. Input Voltage versus Output Current
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17
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5236DW1T1G
1000
1
V
= 10 V
CE
−25°C
I /I = 10
C
B
75°C
75°C
25°C
100
0.1
T = −25°C
A
25°C
0.01
10
1
0.001
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
5
4.5
4
100
10
1
f = 1 MHz
= 0 V
T = 25°C
A
75°C
I
E
3.5
3
25°C
2.5
2
T = −25°C
A
0.1
1.5
0.01
1
V
= 5 V
O
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 64. Output Capacitance
Figure 65. Output Current versus Input Voltage
100
T = −25°C
A
10
1
25°C
75°C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 66. Input Voltage versus Output Current
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18
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5237DW1T1G
1000
1
V
= 10 V
CE
I /I = 10
C
B
−25°C
75°C
T = −25°C
75°C
25°C
100
0.1
A
25°C
0.01
10
1
0.001
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 67. VCE(sat) versus IC
Figure 68. DC Current Gain
5
4.5
4
100
10
1
f = 1 MHz
= 0 V
T = 25°C
A
75°C
I
E
3.5
3
25°C
T = −25°C
2.5
2
A
0.1
1.5
0.01
1
V
= 5 V
O
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 69. Output Capacitance
Figure 70. Output Current versus Input Voltage
100
T = −25°C
A
10
1
25°C
75°C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 71. Input Voltage versus Output Current
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19
MUN5211DW1T1G Series
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.10 0.031 0.037 0.043
0.10 0.000 0.002 0.004
0.008 REF
MIN
A
0.95
0.05
A1 0.00
6
1
5
2
4
3
A3
0.20 REF
0.21
0.14
2.00
1.25
0.65 BSC
0.20
2.10
b
C
D
E
e
0.10
0.10
1.80
1.15
0.30 0.004 0.008 0.012
0.25 0.004 0.005 0.010
2.20 0.070 0.078 0.086
1.35 0.045 0.049 0.053
0.026 BSC
0.30 0.004 0.008 0.012
2.20 0.078 0.082 0.086
H
E
−E−
L
0.10
2.00
H
E
b 6 PL
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
M
M
E
0.2 (0.008)
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
A3
6. COLLECTOR 2
C
A
SOLDERING FOOTPRINT*
0.50
0.0197
A1
L
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
SC−88/SC70−6/SOT−363
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,
affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury
or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MUN5211DW1T1/D
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