MUN5211DW1T1/D [ETC]
Dual Bias Resistor Transistors ; 双偏置电阻晶体管\n
| 型号： | MUN5211DW1T1/D |
| 厂家： | 
ETC |
| 描述： | Dual Bias Resistor Transistors
|
| 文件： | 总12页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN5211DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5211DW1T1 series,
two BRT devices are housed in the SOT–363 package which is ideal
for low power surface mount applications where board space is at a
premium.
(3)
(2)
(1)
R
R
1
2
Q
1
Q
2
R
2
R
1
6
(4)
(5)
(6)
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
5
4
1
2
MAXIMUM RATINGS
3
(T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
SOT–363
CASE 419B
STYLE 1
Rating
Symbol
Value
Unit
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
V
50
50
CBO
CEO
Vdc
I
C
100
mAdc
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
7x
Symbol
Max
Unit
Total Device Dissipation
P
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
D
T = 25°C
A
Derate above 25°C
mW/°C
°C/W
7x = Device Marking
= (See Page 2)
Thermal Resistance –
Junction-to-Ambient
R
670 (Note 1.)
490 (Note 2.)
θ
JA
Characteristic
(Both Junctions Heated)
DEVICE MARKING INFORMATION
Symbol
Max
Unit
See specific marking information in the device marking table
on page 2 of this data sheet.
Total Device Dissipation
P
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
D
T = 25°C
A
Derate above 25°C
mW/°C
°C/W
°C/W
°C
Preferred devices are recommended choices for future use
and best overall value.
Thermal Resistance –
Junction-to-Ambient
R
493 (Note 1.)
325 (Note 2.)
θ
JA
JL
Thermal Resistance –
Junction-to-Lead
R
188 (Note 1.)
208 (Note 2.)
θ
Junction and Storage Temperature T , T
–55 to +150
J
stg
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
January, 2001 – Rev. 3
MUN5211DW1T1/D
MUN5211DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Marking
7A
R1 (K)
10
R2 (K)
10
Shipping
MUN5211DW1T1
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MUN5212DW1T1
7B
22
22
MUN5213DW1T1
7C
47
47
MUN5214DW1T1
7D
10
47
MUN5215DW1T1 (Note 3.)
MUN5216DW1T1 (Note 3.)
MUN5230DW1T1 (Note 3.)
MUN5231DW1T1 (Note 3.)
MUN5232DW1T1 (Note 3.)
MUN5233DW1T1 (Note 3.)
MUN5234DW1T1 (Note 3.)
MUN5235DW1T1 (Note 3.)
MUN5236DW1T1 (Note 3.)
MUN5237DW1T1 (Note 3.)
7E
10
∞
7F
4.7
1.0
2.2
4.7
4.7
22
∞
7G
7H
1.0
2.2
4.7
47
7J
7K
7L
47
7M
7N
2.2
100
47
47
100
22
7P
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
–
–
–
–
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
EBO
EB
C
Collector-Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
–
–
–
–
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (Note 4.) (I = 2.0 mA, I = 0)
C
B
(BR)CEO
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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2
MUN5211DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted, common for Q and Q ) (Continued)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 5.)
DC Current Gain
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
h
FE
35
60
80
60
–
–
–
–
–
–
–
–
–
–
–
–
–
–
(V = 10 V, I = 5.0 mA)
100
140
140
350
350
5.0
CE
C
80
160
160
3.0
8.0
15
80
80
80
80
15
30
200
150
140
150
140
80
Collector-Emitter Saturation Voltage
(I = 10 mA, I = 0.3 mA)
V
–
–
0.25
Vdc
Vdc
CE(sat)
C
B
(I = 10 mA, I = 5 mA) MUN5230DW1T1/MUN5231DW1T1
C
B
(I = 10 mA, I = 1 mA) MUN5215DW1T1/MUN5216DW1T1
C
B
MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kΩ)
V
OL
MUN5211DW1T1
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5213DW1T1
MUN5236DW1T1
MUN5237DW1T1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kΩ)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kΩ)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kΩ)
CC
B
L
Output Voltage (off)
(V = 5.0 V, V = 0.5 V, R = 1.0 kΩ)
V
OH
4.9
–
–
Vdc
CC
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 kΩ) MUN5230DW1T1
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kΩ)
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1
CC
B
L
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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MUN5211DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted, common for Q and Q ) (Continued)
A
1
2
Characteristic
ON CHARACTERISTICS (Note 6.) (Continued)
Input Resistor
Symbol
Min
Typ
Max
Unit
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k Ω
15.4
1.54
70
28.6
2.86
130
61.1
32.9
Resistor Ratio MUN5211DW1T1/MUN5212DW1T1/
MUN5213DW1T1/MUN5236DW1T1
MUN5214DW1T1
R1/R2
0.8
0.17
–
1.0
0.21
–
1.2
0.25
–
MUN5215DW1T1/MUN5216DW1T1
MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1
0.8
1.0
1.2
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5237DW1T1
0.055
0.38
0.038
1.7
0.1
0.185
0.56
0.056
2.6
0.47
0.047
2.1
6. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
300
250
200
150
100
R
= 833°C/W
50
0
θ
JA
–50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
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MUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1
1
1000
I /I = 10
C B
V
CE
= 10 V
T Ă=Ă-25°C
A
25°C
T Ă=Ă75°C
A
25°C
0.1
-25°C
75°C
100
0.01
0.001
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
25°C
75°C
f = 1 MHz
I = 0 V
E
T Ă=Ă-25°C
A
T = 25°C
A
1
0.1
2
1
0
0.01
0.001
V = 5 V
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V = 0.2 V
O
T Ă=Ă-25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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MUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212DW1T1
1000
1
V
CE
= 10 V
I /I = 10
C B
T Ă=Ă75°C
A
25°C
25°C
T Ă=Ă-25°C
A
0.1
-25°C
75°C
100
0.01
10
0.001
1
10
100
0
20
40
50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
I = 0 V
T Ă=Ă-25°C
A
E
T = 25°C
A
0.1
0.01
V = 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V = 0.2 V
O
T Ă=Ă-25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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MUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T Ă=Ă75°C
A
25°C
-25°C
25°C
75°C
100
T Ă=Ă-25°C
A
0.1
0.01
10
0
20
I , COLLECTOR CURRENT (mA)
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
I = 0 V
75°C
E
T Ă=Ă-25°C
A
0.8
T = 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V = 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V = 0.2 V
O
T Ă=Ă-25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
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MUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5214DW1T1
1
300
T Ă=Ă75°C
A
V
CE
= 10
I /I = 10
C B
T Ă=Ă-25°C
250
200
150
100
A
25°C
25°C
75°C
0.1
-25°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4
3.5
3
100
10
1
f = 1 MHz
l = 0 V
T Ă=Ă75°C
25°C
A
E
T = 25°C
A
-25°C
2.5
2
1.5
1
V = 5 V
O
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V = 0.2 V
O
T Ă=Ă-25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
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MUN5211DW1T1 Series
INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–363
0.5 mm (min)
1.9 mm
SOT–363 POWER DISSIPATION
The power dissipation of the SOT–363 is a function of
one can calculate the power dissipation of the device which
in this case is 256 milliwatts.
the pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
150°C – 25°C
PD =
= 256 milliwatts
490°C/W
determined by T
, the maximum rated junction
J(max)
The 490°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 256
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–363 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad . Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
temperature of the die, R , the thermal resistance from
the device junction to ambient; and the operating
θJA
temperature, T . Using the values provided on the data
A
sheet, P can be calculated as follows:
D
T
J(max) – TA
Rθ
PD =
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T of 25°C,
A
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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MUN5211DW1T1 Series
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 22 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 5
HEATING
ZONES 4 & 7
SPIKE"
STEP 6 STEP 7
VENT COOLING
STEP 1
PREHEAT
ZONE 1
RAMP"
STEP 2
VENT
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6
SOAK"
SOAK" ZONES 2 & 5
RAMP"
205° TO 219°C
PEAK AT
SOLDER JOINT
200°C
150°C
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
140°C
100°C
MASS OF ASSEMBLY)
100°C
50°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 22. Typical Solder Heating Profile
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10
MUN5211DW1T1 Series
PACKAGE DIMENSIONS
SOT–363
CASE 419B–01
ISSUE G
A
G
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
6
1
5
4
3
S
–B–
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
2
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
0.026 BSC
0.65 BSC
M
M
B
0.2 (0.008)
D 6 PL
---
0.004
0.004
0.004
0.010
0.012
---
0.10
0.10
0.10
0.25
0.30
K
N
S
V
N
0.008 REF
0.20 REF
0.079
0.012
0.087
0.016
2.00
0.30
2.20
0.40
J
STYLE 1:
C
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
K
6. COLLECTOR 2
H
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11
MUN5211DW1T1 Series
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MUN5211DW1T1/D
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