ESDA5V6V5 [WEITRON]
Quad Array for ESD Protection; 四阵列的ESD保护
| 型号： | ESDA5V6V5 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Quad Array for ESD Protection |
| 文件： | 总3页 (文件大小：547K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESDA6V8V5 Series
Quad Array for ESD Protection
Peak Pulse Power
100 Watts
P b
Lead(Pb)-Free
Reverse WorkingVoltage
6.8VOLTS
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability.
It is intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at apremium.
5
4
1
2
3
SOT-553
Features:
* Low Leakage < 1µA @ 3 Volt
* Breakdown Voltage: 6.8 Volt @ 1 mA
* ESD Protection Meeting IEC61000-4-2 - Level 4
Mechanical Characteristics:
* Void Free, Transfer-Molded, Thermosetting Plastic Case
* Corrosion Resistant Finish, Easily Solderable
* Package Designed for Optimal Automated Board Assembly
* Small Package Size for High Density Applications
SOT-553 Outline Dimensions
Unit:mm
D
K
SOT-553
Dim
Min
1.50
1.10
0.50
0.17
Max
1.70
1.30
0.60
0.27
5
4
A
B
C
D
G
J
B
S
3
1
2
0.50 REF
0.08
0.10
1.50
0.16
0.30
1.70
J
K
S
G
C
A
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ESDA6V8V5 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
I
I
PP
Maximum Reverse Peak Pulse Current
I
F
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
V
V
V
C
BR RWM
V
I
I
T
V
F
R
T
I
V
Maximum Temperature Coefficient of V
BR
BR
I
F
Forward Current
V
Forward Voltage @ I
F
F
I
PP
Z
ZT
Maximum Zener Impedance @ I
Reverse Current
ZT
I
ZK
Uni-Directional
Z
Maximum Zener Impedance @ I
ZK
ZK
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Value
100
Unit
W
Peak Power Dissipation (8 X 20 s @ T = 25°C) (Note 1)
P
PK
A
Steady State Power - 1 Diode (Note 2)
P
D
300
mW
Thermal Resistance Junction to Ambient
Above 25°C, Derate
R
370
2.7
°C/W
mW/°C
JA
Maximum Junction Temperature
T
150
°C
°C
kV
Jmax
Operating Junction and Storage Temperature Range
T T
J
-55 to +150
stg
ESD Discharge
MIL STD 883C - Method 3015-6
IEC1000-4-2, Air Discharge
V
16
16
9
PP
IEC1000-4-2, Contact Discharge
Lead Solder Temperature (10 seconds duration)
T
260
°C
L
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Typ Capacitance
Max
V @ I =
Breakdown Voltage
@ 1 mA (Volts)
Leakage Current
@ V
@ 0 V Bias
F
F
V
I
RM
(Note 3)
200 mA
V
Max @ I
BR
RM
Device
C
PP
Min
5.32
5.89
6.46
Nom
5.6
Max
5.88
6.51
7.14
V
I
( A)
V
(V)
I (A)
PP
(pF)
90
(V)
RWM
RWM
C
3.0
4.0
4.3
1.0
10.5
11.5
12.5
10
1.3
ESDA5V6V5
ESDA6V2V5
ESDA6V8V5
6.2
0.5
0.1
9.0
8.0
80
1.3
6.8
70
1.3
1. Non-repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. Mounted on FR-4 board with min pad.
D
3. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25°C
R
A
Device Marking
Item
Marking
Eqivalent Circuit diagram
ESDA5V6V5
ESDA6V2V5
ESDA6V8V5
5
4
1
2
3
VE
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09-Oct-07
ESDA6V8V5 Series
110
100
90
80
70
60
50
40
30
20
110
100
90
WAVEFORM
PARAMETERS
t = 8
r
s
80
t = 20
d
s
70
c-t
60
t = I /2
50
40
30
20
d
PP
10
0
10
0
0
5
10
15
t, TIME ( s)
20
25
30
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 2. Power Derating Curve
Figure 1. Pulse Waveform
100
90
80
70
60
50
40
30
20
14
12
10
8
6
4
2
0
10
0
1
3
I
5
7
9
10 11 12.5 13.5
5.3
5.6
5.9
6.2
6.5
6.8
7.1
, PEAK PULSE CURRENT (A)
V
BR
, BREAKDOWN VOLTAGE (V)
PP
Figure 3. Clamping Voltage versus
Peak Pulse Current
Figure 4. Typical Capacitance
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