2SC2412K_07 [WEITRON]
NPN General Purpose Transistors; NPN通用晶体管
| 型号： | 2SC2412K_07 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | NPN General Purpose Transistors |
| 文件： | 总5页 (文件大小：582K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2412K
NPN
3
1
2
SOT-23
Value
50
60
7.0
150
V
CEO
200
1.6
625
T ,Tstg
J
1.0
50
50
50
60
7.0
u
0.1
I
O
V
0
E= 50
60
)
dc, E=
u
u
0.1
0.1
7.0
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ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted) (Countinued)
A
Characteristics
Symbol
Min
Typ
Unit
Max
ON CHARACTERISTICS
DC Current Gain
(I = 1 mAdc,V = 6.0 Vdc)
-
-
120
-
h
-
560
0.4
FE
C
CE
Collector-Emitter Saturation Voltage
(I = 50 mAdc, I = 5mAdc)
V
Vdc
CE(sat)
Cob
C
B
Output Capacitance
=12Vdc, I =0A, f=1MHZ
PF
-
-
2.0
3.5
-
V
CE
E
Current-Gain-Bandwidth Product
f
T
MHz
180
(I = 2 mAdc,V =12 Vdc,f=100 MHZ)
E
CE
CLASSIFICATION OF h
FE
Q
Rank
R
180-390
BR
S
Range
120-270
BQ
270-560
G1F
Marking
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2SC2412K
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (1)
0.50mA
50
100
V
CE =6V
Ta=25 C
A
A
m
m
m
5
0
5
4
4
3
.
.
.
0
0
0
20
10
5
A
80
60
40
0.30mA
0.25mA
0.20mA
0.15mA
0
0
2
1
1
=
a
T
0.5
0.10mA
0.05mA
20
0
0.2
0.1
IB=0A
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
0.4
0.8
1.2
1.6
2.0
BE (V)
BASE TO EMITTER VOLTAGE : V
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
Fig.3 Grounded emitter output
Fig.4 DC current gain vs.
collector current (1)
characteristics (11)
10
500
30 A
27 A
24 A
21 A
Ta=25 C
Ta=25 C
8
6
4
V
CE =5V
3V
200
100
50
1V
18 A
15 A
12 A
9 A
6 A
2
0
20
10
3 A
I
B
=0A
12
0
4
8
16
20
0.2 0.5
1
2
5
10 20 50 100 200
(V)
COLLECTOR TO EMITTER VOLTAGE : VCE
COLLECTOR CURRENT : I (mA)
C
Fig.5 DC current gain vs.
collector current (11)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
500
0.5
VCE =5V
Ta=25 C
Ta=100 C
0.2
25 C
55 C
200
100
50
I
C
/I
B
=50
20
10
0.1
0.05
0.02
0.01
20
10
0.2 0.5
1
2
5
10 20 50 100 200
0.2 0.5
1
2
5
10 20 50 100 200
COLLECTOR CURRENT : IC(mA)
COLLECTOR CURRENT : IC
(mA)
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Fig.7 Collector-emitter saturation
voltage vs. collector current (1)
Fig.8 Gain bandwidth product vs.
emitter current
0.5
0.2
I
C
/IB=10
Ta=25 C
V
CE =6V
500
200
Ta=100 C
25 C
55 C
0.1
0.05
100
50
0.02
0.01
0.5
1
2
5
10
20
50 100
0.2 0.5
1
2
5
10 20 50 100 200
EMITTER CURRENT : IE (mA)
COLLECTOR CURRENT : IC (mA)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
20
Ta=25 C
f
I
I
=1MHz
E
=0A
10
5
C
=0A
C
i
b
2
1
C
o
b
0.2
0.5
1
2
5
10 20
50
COLLECTOR TO BASE VOLTAGE : V (V)
CB
EMITTER TO BASE VOLTAGE
:
V
EB
(V)
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2SC2412K
SOT-23 Package Outline Dimensions
Unit:mm
A
Dim
A
B
C
D
Min Max
0.35 0.51
1.19 1.40
2.10 3.00
0.85 1.05
0.46 1.00
1.70 2.10
2.70 3.10
0.01 0.13
0.89 1.10
0.30 0.61
0.076 0.25
B
TOP VIE W
C
E
G
H
J
K
L
D
G
H
E
K
M
L
J
M
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相关型号：
2SC2412Q
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
RECTRON
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