2SC2412K_09 [ROHM]
General purpose transistor (50V, 0.15A); 通用晶体管（ 50V ， 0.15A ）
| 型号： | 2SC2412K_09 |
| 厂家： | 
ROHM |
| 描述： | General purpose transistor (50V, 0.15A) |
| 文件： | 总4页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Features
Dimensions (Unit : mm)
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029 / 2SA933AS.
2SC2412K
2SC4081
2SC4617
(
)
1
(
)
2
(
)
3
1.25
2.1
0.8
1.6
1.6
2.8
Structure
Epitaxial planar type
NPN silicon transistor
0.1Min.
0.1Min.
0.3Min.
Each lead has same dimensions
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter
(2) Base
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
JEDEC : SOT-323
(3) Collector
JEDEC : SOT-416
(3) Collector
JEDEC : SOT-346
(3) Collector
Abbreviated symbol: B*
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC5658
2SC1740S
4±
0.2
2±0.2
1.2
0.2 0.8 0.2
( )
2
(3)
( )
1
+0.15
0.45
−0.05
0.15Max.
+0.15
+0.4
0.45
−0.05
2.5
0.5
−
0.1
5
(1) (2) (3)
(1) Base
(1) Emitter
ROHM : VMT3
(2) Emitter
(3) Collector
ROHM
EIAJ
:
SPT
(2) Collector
(3) Base
:
SC-72
Abbreviated symbol: B*
* Denotes hFE
Absolute maximum (Ta=25C)
Parameter
Symbol
Limits
60
Unit
V
V
V
CBO
V
V
V
A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CEO
EBO
50
7
I
C
0.15
0.2
0.15
0.3
150
2SC2412K, 2SC4081
Collector power
2SC4617, 2SC5658
dissipation
PC
W
2SC1740S
Junction temperature
Tj
°C
°C
Storage temperature
Tstg
−55 to +150
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
60
50
7
I
I
I
C
=50μA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
V
C=1mA
−
−
V
E=50μA
I
CBO
EBO
FE
CE(sat)
−
−
0.1
0.1
390
0.4
−
μA
μA
−
V
CB=60V
I
−
−
Emitter cutoff current
V
EB=7V
CE=6V, I
/I =50mA/5mA
h
120
−
−
V
C
=1mA
DC current transfer ratio
V
−
V
I
C B
Collector-emitter saturation voltage
Transition frequency
f
T
−
180
2
MHz
pF
V
CE=12V, I
CE=12V, I
E
=−2mA, f=100MHz
=0A, f=1MHz
Cob
−
3.5
V
E
Output capacitance
www.rohm.com
2009.12 - Rev.C
1/3
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Data Sheet
Packaging specifications and hFE
Taping
TL
Package
Code
T146
3000
T106
3000
−
T2L
TP
Basic ordering
unit (pieces)
3000
8000
5000
hFE
Type
2SC2412K QR
−
−
−
−
−
−
−
−
−
2SC4081
2SC4617
2SC5658
QR
QR
QR
−
−
−
−
−
−
−
−
−
2SC1740S QR
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270 180 to 390
Electrical characterristic curves
0.50mA
100
80
50
10
8
Ta=25°C
30μA
27μA
24μA
21μA
Ta=25°C
VCE=6V
20
10
5
0.30mA
0.25mA
0.20mA
0.15mA
60
6
18μA
15μA
12μA
9μA
C
°
2
1
100
=
40
4
Ta
0.10mA
0.05mA
0.5
6μA
20
0
2
0
3μA
0.2
0.1
IB=0A
I
B=0A
0
0.4
0.8
1.2
1.6
2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
Fig.3 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
characteristics ( Ι )
characteristics ( ΙΙ )
500
0.5
500
Ta=25°C
Ta=25°C
VCE=5V
Ta=100°C
0.2
25°C
V
CE=5V
3V
1V
200
100
50
200
100
50
−55°C
I
C/I
B
=50
20
0.1
10
0.05
0.02
0.01
20
10
20
10
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
Fig.4 DC current gain vs.
Fig.5 DC current gain vs.
Fig. 6 Collector-emitter saturation
voltage vs. collector current
collector current ( Ι )
collector current ( ΙΙ )
www.rohm.com
2009.12 - Rev.C
2/3
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Data Sheet
0.5
0.5
Ta=25°C
IC/IB=10
IC/IB=50
V
CE=6V
500
200
0.2
Ta=100°C
25°C
−55°C
0.2
0.1
Ta=100°C
25°C
0.1
−55°C
0.05
0.05
100
50
0.02
0.01
0.02
0.01
−0.5 −1
−2
−5 −10 −20
−50 −100
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2
0.5
1
2
5
10
20
50 100
EMITTER CURRENT : I
E
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
(mA)
Fig.9 Gain bandwidth product vs.
emitter current
Fig.7 Collector-emitter saturation
Fig.8 Collector-emitter saturation
voltage vs. collector current ( Ι )
voltage vs. collector current (ΙΙ)
20
Ta=25°C
Ta=25°C
f=32MH
Z
200
100
50
f
I
I
=1MHz
VCB=6V
E
=0A
=0A
10
5
C
2
1
20
10
−0.2
−0.5
−1
−2
−5
(mA)
−10
0.2
0.5
1
2
5
10 20
50
EMITTER CURRENT : I
E
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.11 Base-collector time constant
vs. emitter current
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
www.rohm.com
2009.12 - Rev.C
3/3
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
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illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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R0039
A
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