2SC2412K_09 [ROHM]

General purpose transistor (50V, 0.15A); 通用晶体管( 50V , 0.15A )
2SC2412K_09
型号: 2SC2412K_09
厂家: ROHM    ROHM
描述:

General purpose transistor (50V, 0.15A)
通用晶体管( 50V , 0.15A )

晶体 晶体管
文件: 总4页 (文件大小:172K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
General purpose transistor (50V, 0.15A)  
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S  
Features  
Dimensions (Unit : mm)  
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)  
2. Complements the 2SA1037AK / 2SA1576A /  
2SA1774H / 2SA2029 / 2SA933AS.  
2SC2412K  
2SC4081  
2SC4617  
(
)
1
(
)
2
(
)
3
1.25  
2.1  
0.8  
1.6  
1.6  
2.8  
Structure  
Epitaxial planar type  
NPN silicon transistor  
0.1Min.  
0.1Min.  
0.3Min.  
Each lead has same dimensions  
Each lead has same dimensions  
ROHM : UMT3  
EIAJ : SC-70  
(1) Emitter  
(2) Base  
ROHM : EMT3  
EIAJ : SC-75A  
(1) Emitter  
(2) Base  
ROHM : SMT3  
EIAJ : SC-59  
(1) Emitter  
(2) Base  
JEDEC : SOT-323  
(3) Collector  
JEDEC : SOT-416  
(3) Collector  
JEDEC : SOT-346  
(3) Collector  
Abbreviated symbol: B*  
Abbreviated symbol: B*  
Abbreviated symbol: B*  
2SC5658  
2SC1740S  
4±  
0.2  
2±0.2  
1.2  
0.2 0.8 0.2  
( )  
2
(3)  
( )  
1
+0.15  
0.45  
0.05  
0.15Max.  
+0.15  
+0.4  
0.45  
0.05  
2.5  
0.5  
0.1  
5
(1) (2) (3)  
(1) Base  
(1) Emitter  
ROHM : VMT3  
(2) Emitter  
(3) Collector  
ROHM  
EIAJ  
:
SPT  
(2) Collector  
(3) Base  
:
SC-72  
Abbreviated symbol: B*  
* Denotes hFE  
Absolute maximum (Ta=25C)  
Parameter  
Symbol  
Limits  
60  
Unit  
V
V
V
CBO  
V
V
V
A
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CEO  
EBO  
50  
7
I
C
0.15  
0.2  
0.15  
0.3  
150  
2SC2412K, 2SC4081  
Collector power  
2SC4617, 2SC5658  
dissipation  
PC  
W
2SC1740S  
Junction temperature  
Tj  
°C  
°C  
Storage temperature  
Tstg  
55 to +150  
Electrical characteristics (Ta=25C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
BVCBO  
BVCEO  
BVEBO  
60  
50  
7
I
I
I
C
=50μA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V
C=1mA  
V
E=50μA  
I
CBO  
EBO  
FE  
CE(sat)  
0.1  
0.1  
390  
0.4  
μA  
μA  
V
CB=60V  
I
Emitter cutoff current  
V
EB=7V  
CE=6V, I  
/I =50mA/5mA  
h
120  
V
C
=1mA  
DC current transfer ratio  
V
V
I
C B  
Collector-emitter saturation voltage  
Transition frequency  
f
T
180  
2
MHz  
pF  
V
CE=12V, I  
CE=12V, I  
E
=2mA, f=100MHz  
=0A, f=1MHz  
Cob  
3.5  
V
E
Output capacitance  
www.rohm.com  
2009.12 - Rev.C  
1/3  
c
2009 ROHM Co., Ltd. All rights reserved.  
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S  
Data Sheet  
Packaging specifications and hFE  
Taping  
TL  
Package  
Code  
T146  
3000  
T106  
3000  
T2L  
TP  
Basic ordering  
unit (pieces)  
3000  
8000  
5000  
hFE  
Type  
2SC2412K QR  
2SC4081  
2SC4617  
2SC5658  
QR  
QR  
QR  
2SC1740S QR  
hFE values are classified as follows :  
Item  
Q
R
hFE  
120 to 270 180 to 390  
Electrical characterristic curves  
0.50mA  
100  
80  
50  
10  
8
Ta=25°C  
30μA  
27μA  
24μA  
21μA  
Ta=25°C  
VCE=6V  
20  
10  
5
0.30mA  
0.25mA  
0.20mA  
0.15mA  
60  
6
18μA  
15μA  
12μA  
9μA  
C
°
2
1
100  
=
40  
4
Ta  
0.10mA  
0.05mA  
0.5  
6μA  
20  
0
2
0
3μA  
0.2  
0.1  
IB=0A  
I
B=0A  
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
BASE TO EMITTER VOLTAGE : VBE (V)  
0
4
8
12  
16  
20  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
Fig.2 Grounded emitter output  
Fig.3 Grounded emitter output  
Fig.1 Grounded emitter propagation  
characteristics  
characteristics ( Ι )  
characteristics ( ΙΙ )  
500  
0.5  
500  
Ta=25°C  
Ta=25°C  
VCE=5V  
Ta=100°C  
0.2  
25°C  
V
CE=5V  
3V  
1V  
200  
100  
50  
200  
100  
50  
55°C  
I
C/I  
B
=50  
20  
0.1  
10  
0.05  
0.02  
0.01  
20  
10  
20  
10  
0.2 0.5  
1
2
5
10 20 50 100 200  
(mA)  
0.2 0.5  
1
2
5
10 20 50 100 200  
(mA)  
0.2 0.5  
1
2
5
10 20 50 100 200  
(mA)  
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : I  
C
Fig.4 DC current gain vs.  
Fig.5 DC current gain vs.  
Fig. 6 Collector-emitter saturation  
voltage vs. collector current  
collector current ( Ι )  
collector current ( ΙΙ )  
www.rohm.com  
2009.12 - Rev.C  
2/3  
c
2009 ROHM Co., Ltd. All rights reserved.  
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S  
Data Sheet  
0.5  
0.5  
Ta=25°C  
IC/IB=10  
IC/IB=50  
V
CE=6V  
500  
200  
0.2  
Ta=100°C  
25°C  
55°C  
0.2  
0.1  
Ta=100°C  
25°C  
0.1  
55°C  
0.05  
0.05  
100  
50  
0.02  
0.01  
0.02  
0.01  
0.5 1  
2  
5 10 20  
50 100  
0.2 0.5  
1
2
5
10 20 50 100 200  
(mA)  
0.2  
0.5  
1
2
5
10  
20  
50 100  
EMITTER CURRENT : I  
E
(mA)  
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : I  
C
(mA)  
Fig.9 Gain bandwidth product vs.  
emitter current  
Fig.7 Collector-emitter saturation  
Fig.8 Collector-emitter saturation  
voltage vs. collector current ( Ι )  
voltage vs. collector current (ΙΙ)  
20  
Ta=25°C  
Ta=25°C  
f=32MH  
Z
200  
100  
50  
f
I
I
=1MHz  
VCB=6V  
E
=0A  
=0A  
10  
5
C
2
1
20  
10  
0.2  
0.5  
1  
2  
5  
(mA)  
10  
0.2  
0.5  
1
2
5
10 20  
50  
EMITTER CURRENT : I  
E
COLLECTOR TO BASE VOLTAGE : VCB (V)  
EMITTER TO BASE VOLTAGE : VEB (V)  
Fig.11 Base-collector time constant  
vs. emitter current  
Fig.10 Collector output capacitance vs.  
collector-base voltage  
Emitter input capacitance vs.  
emitter-base voltage  
www.rohm.com  
2009.12 - Rev.C  
3/3  
c
2009 ROHM Co., Ltd. All rights reserved.  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
equipment or devices (such as audio visual equipment, office-automation equipment, commu-  
nication devices, electronic appliances and amusement devices).  
The Products specified in this document are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a  
Product may fail or malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard  
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The Products are not designed or manufactured to be used with any equipment, device or  
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© 2009 ROHM Co., Ltd. All rights reserved.  
R0039  
A

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