2SC2412K_1 [ROHM]
General purpose transistor (50V, 0.15A); 通用晶体管（ 50V ， 0.15A ）
| 型号： | 2SC2412K_1 |
| 厂家： | 
ROHM |
| 描述： | General purpose transistor (50V, 0.15A) |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2412K / 2SC4081 / 2SC4617 /
2SC5658 / 2SC1740S
Transistors
General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S
!External dimensions (Units : mm)
!Features
1) Low Cob.
2SC2412K
2SC4081
2SC4617
Cob=2.0pF (Typ.)
( )
1
2) Complements the 2SA1037AK /
2SA1576A / 2SA1774H /
2SA2029 / 2SA933AS.
( )
2
( )
3
1.25
2.1
0.8
1.6
1.6
2.8
0.1Min.
0.1Min.
0.3Min.
Each lead has same dimensions
Each lead has same dimensions
!Structure
Epitaxial planar type
NPN silicon transistor
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter
(2) Base
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
JEDEC : SOT-323
(3) Collector
JEDEC : SOT-416
(3) Collector
JEDEC : SOT-346
(3) Collector
Abbreviated symbol: B*
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC5658
2SC1740S
4±
0.2
2±0.2
1.2
0.2 0.8 0.2
( )
2
(3)
( )
1
+0.15
0.45
−0.05
0.15Max.
+0.15
+0.4
0.45
−0.05
2.5
0.5
−
0.1
5
(1) (2) (3)
(1) Base
(1) Emitter
ROHM : VMT3
(2) Emitter
(3) Collector
ROHM
EIAJ
: SPT
SC-72
(2) Collector
(3) Base
:
Abbreviated symbol: B*
* Denotes hFE
!Absolute maximum (Ta=25°C)
Parameter
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
60
50
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
7
V
I
C
0.15
0.2
A
2SC2412K, 2SC4081
Collector power
2SC4617, 2SC5658
dissipation
P
C
0.15
0.3
W
2SC1740S
Junction temperature
Tj
150
°C
°C
Storage temperature
Tstg
−55~+150
2SC2412K / 2SC4081 / 2SC4617 /
2SC5658 / 2SC1740S
Transistors
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
60
50
7
I
I
I
C
=50µA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
V
C=1mA
−
−
V
E=50µA
I
CBO
EBO
FE
CE(sat)
−
−
0.1
0.1
560
0.4
−
µA
µA
−
V
CB=60V
I
−
−
Emitter cutoff current
V
EB=7V
CE=6V, I
/I =50mA/5mA
h
120
−
−
V
C
=1mA
DC current transfer ratio
V
−
V
I
C B
Collector-emitter saturation voltage
Transition frequency
f
T
−
180
2
MHz
pF
V
V
CE=12V, I
CE=12V, I
E
E
=−2mA, f=100MHz
Cob
−
3.5
=0A, f=1MHz
Output capacitance
!Packaging specifications and hFE
Taping
Bulk
TP
Package
Code
T146
T106
3000
−
TL
T2L
Basic ordering
unit (pieces)
3000
3000
8000
5000
hFE
Type
2SC2412K QRS
−
−
−
−
−
−
−
−
−
2SC4081
2SC4617
2SC5658
QRS
QRS
QRS
−
−
−
−
−
−
−
−
−
2SC1740S QRS
−
hFE values are classified as follows :
Item
Q
R
S
hFE
120~270
180~390
270~560
!Electrical characterristic curves
0.50mA
100
50
10
Ta=25°C
30µA
V
CE=6V
Ta=25°C
27µA
24µA
21µA
20
10
5
80
60
40
8
6
4
0.30mA
0.25mA
0.20mA
0.15mA
18µA
15µA
12µA
9µA
C
°
2
1
100
=
Ta
0.10mA
0.05mA
0.5
6µA
20
0
2
0
3µA
0.2
0.1
IB=0A
I
B
=0A
12
0
0.4
0.8
1.2
1.6
2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
0
4
8
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
Fig.3 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
characteristics ( Ι )
characteristics ( ΙΙ )
2SC2412K / 2SC4081 / 2SC4617 /
2SC5658 / 2SC1740S
Transistors
500
500
0.5
Ta=25°C
Ta=25°C
VCE=5V
Ta=100°C
0.2
25°C
V
CE=5V
3V
1V
200
100
50
200
100
50
−55°C
I
C/I
B
=50
20
10
0.1
0.05
0.02
0.01
20
10
20
10
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
Fig.4 DC current gain vs.
Fig.5 DC current gain vs.
Fig. 6 Collector-emitter saturation
voltage vs. collector current
collector current ( Ι )
collector current ( ΙΙ )
0.5
0.2
0.5
IC/IB=10
IC/IB=50
Ta=25°C
V
CE=6V
500
200
Ta=100°C
25°C
0.2
0.1
−55°C
Ta=100°C
25°C
0.1
−55°C
0.05
0.05
0.02
0.01
100
50
0.02
0.01
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2
0.5
1
2
5
10
20
50 100
−0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
Fig.8 Collector-emitter saturation
Fig.9 Gain bandwidth product vs.
emitter current
voltage vs. collector current ( Ι )
voltage vs. collector current (ΙΙ)
20
Ta=25°C
Ta=25°C
f=32MH
Z
200
100
50
f
I
I
=1MHz
V
CB=6V
E
=0A
=0A
10
5
C
2
1
20
10
−0.2
−0.5
−1
−2
−5
(mA)
−10
0.2
0.5
1
2
5
10 20
50
EMITTER CURRENT : I
E
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.11 Base-collector time constant
vs. emitter current
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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