VSKK250-12PBF [VISHAY]
Silicon Controlled Rectifier, ROHS COMPLIANT PACKAGE-5;型号: | VSKK250-12PBF |
厂家: | VISHAY |
描述: | Silicon Controlled Rectifier, ROHS COMPLIANT PACKAGE-5 局域网 |
文件: | 总11页 (文件大小:240K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VSK.170PbF, .250PbF Series
Vishay High Power Products
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 170/250 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
RoHS
COMPLIANT
• Large creepage distances
• Lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
MAGN-A-PAKTM
This new VSK series of MAGN-A-PAKTM modules uses high
voltage power thyristor/thyristor and thyristor/diode in seven
basic configurations. The semiconductors are electrically
isolated from the metal base, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
PRODUCT SUMMARY
IT(AV)
170/250 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.170..
VSK.250..
250
UNITS
IT(AV)
85 °C
170
IT(RMS)
377
555
A
50 Hz
60 Hz
50 Hz
60 Hz
5100
5350
131
8500
8900
361
ITSM
I2t
kA2s
119
330
I2√t
1310
3610
kA2√s
V
V
DRM/VRRM
Up to 1600
- 40 to 130
TJ
Range
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM/VDRM, MAXIMUM REPETITIVE
V
RSM, MAXIMUM
I
RRM/IDRM
VOLTAGE
CODE
PEAK REVERSE AND OFF-STATE
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
AT 130 °C
MAXIMUM
mA
TYPE NUMBER
BLOCKING VOLTAGE
V
04
08
10
12
14
16
400
800
500
900
1000
1200
1400
1600
1100
1300
1500
1700
VSK.170-
VSK.250-
50
Document Number: 94417
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSK.170PbF, .250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 170/250 A
Vishay High Power Products
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
VSK.170 VSK.250 UNITS
170
85
250
85
A
Maximum average on-state current
at case temperature
IT(AV)
°C
Maximum RMS on-state current
IT(RMS)
377
555
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
5100
5350
4300
4500
131
8500
8900
7150
7500
361
No voltage
reapplied
A
Maximum peak, one-cycle on-state
non-repetitive, surge current
ITSM
100 % VRRM
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
No voltage
reapplied
119
330
Maximum I2t for fusing
I2t
kA2s
92.5
84.4
1310
255
100 % VRRM
reapplied
233
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
3610
kA2√s
(16.7 % x π x IT(AV) < I < π x IT(AV)),
TJ = TJ maximum
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
0.89
1.12
1.34
0.96
1.60
500
0.97
1.00
0.60
0.57
1.44
500
V
(I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(16.7 % x π x IT(AV) < I < π x IT(AV)),
TJ = TJ maximum
mΩ
V
rt2
(I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
ITM = π x IT(AV), TJ = TJ maximum, 180° conduction,
average power = VT(TO) x IT(AV) + rf x (IT(RMS)
VTM
IH
2
)
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C
mA
Anode supply = 12 V, resistive load = 1 Ω,
gate pulse: 10 V, 100 µs, TJ = 25 °C
Maximum latching current
IL
1000
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170 VSK.250 UNITS
Typical delay time
Typical rise time
td
tr
1.0
TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/µs
Vd = 0.67 % VDRM
2.0
µs
ITM = 300 A; dI/dt = 15 A/µs; TJ = TJ maximum;
VR = 50 V; dV/dt = 20 V/µs; gate 0 V, 100 Ω
Typical turn-off time
tq
50 - 150
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170 VSK.250 UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum
50
mA
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
TJ = TJ maximum, exponential to 67 % rated VDRM
3000
1000
V
Critical rate of rise of off-state voltage
dV/dt
V/µs
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94417
Revision: 22-Apr-08
VSK.170PbF, .250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 170/250 A
Vishay High Power Products
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
tp ≤ 5 ms, TJ = TJ maximum
f = 50 Hz, TJ = TJ maximum
tp ≤ 5 ms, TJ = TJ maximum
tp ≤ 5 ms, TJ = TJ maximum
TJ = - 40 °C
VSK.170 VSK.250
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
10.0
2.0
W
A
PG(AV)
+ IGM
3.0
- VGT
5.0
4.0
V
Anode supply = 12 V,
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
VGT
TJ = 25 °C
3.0
resistive load; Ra = 1 Ω
TJ = TJ maximum
TJ = - 40 °C
2.0
350
200
100
0.25
10.0
Anode supply = 12 V,
resistive load; Ra = 1 Ω
IGT
TJ = 25 °C
mA
TJ = TJ maximum
Maximum gate voltage that will not trigger
Maximum gate current that willnot trigger
VGD
IGD
TJ = TJ maximum, rated VDRM applied
TJ = TJ maximum, rated VDRM applied
V
mA
TJ = TJ maximum, ITM = 400 A,
rated VDRM applied
Maximum rate of rise of turned-on current
dI/dt
500
A/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170 VSK.250
- 40 to 130
UNITS
Junction operating temperature range
Storage temperature range
TJ
°C
TStg
- 40 to 150
Maximum thermal resistance,
junction to case per junction
RthJC
RthCS
DC operation
0.17
0.02
0.125
0.02
K/W
Nm
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
A mounting compound is recommended and
the torque should be rechecked after a
period of about 3 hours to allow for the
spread of the compound.
MAP to heatsink
busbar to MAP
Mounting torque 10 %
4 to 6
500
g
Approximate weight
Case style
17.8
oz.
MAGN-A-PAK
ΔR CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
RECTANGULAR CONDUCTION AT TJ MAXIMUM
DEVICES
UNITS
180°
0.009
0.009
120°
0.010
0.010
90°
60°
30°
180°
0.007
0.007
120°
0.011
0.011
90°
60°
30°
VSK.170-
VSK.250-
0.010
0.014
0.020
0.020
0.032
0.032
0.015
0.015
0.020
0.020
0.033
0.033
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94417
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSK.170PbF, .250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 170/250 A
Vishay High Power Products
130
120
110
100
90
350
DC
VSK.170.. Series
R
thJC (DC) = 0.17 K/W
Conduction Angle
180°
300
120°
90°
250
200
150
100
50
60°
30°
RMS Limit
30°
Conduction Period
80
60°
90°
VSK.170.. Series
Per Junction
TJ = 125°C
120°
180°
70
60
0
0
40
80
120
160
200
0
50
100
150
200
250
300
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
130
5000
VSK.170.. Series
thJC
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
R
(DC) = 0.17 K/W
120
110
100
90
Initial TJ = 130°C
4500
4000
3500
3000
2500
2000
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Conduction Period
30°
60°
90°
120°
80
70
180°
200
VSK.170.. Series
Per Junction
DC
250
60
0
50
100
150
300
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
300
5000
Maximum Non Repetitive Surge Curren t
180°
120°
90°
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained
.
250
200
150
100
50
4500
4000
3500
3000
2500
2000
Initial TJ = 130°C
60°
No Voltage Reapplied
Rated VRRM Reapplied
30°
RMS Limit
Conduction Angle
VSK.170.. Series
Per Junction
TJ = 125°C
VSK.170.. Series
Per Junction
0
0
40
80
120
160
200
0.01
0.1
Pulse Train Duration (s)
1
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94417
Revision: 22-Apr-08
VSK.170PbF, .250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 170/250 A
Vishay High Power Products
400
0
0
.
180°
120°
90°
1
.
2
6
t
h
K
0
K
/
S
/
.
2
W
A
350
300
250
200
150
100
50
W
5
K
/
0
W
.
3
K
60°
/
W
30°
0
.
3
5
K
/W
Conduction Angle
VSK.170.. Series
Per Module
TJ = 130°C
0
0
50 100 150 200 250 300 350
Total RMS Output Current (A)
4
00
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
0
0
.
0
8
0
K
/
.
1
W
K
/
W
0
.1
2
K
180°
(Sine)
180°
/
W
0
.
1
6
K
/
W
(Rect)
0
.
3
5
K
/
W
2 x VSK.170.. Series
Single Phase Bridge
Connected
TJ = 130°C
0
50 100 150 200 250 300
Total Output Current (A)
3
50
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
1600
1400
1200
1000
800
600
400
200
0
120°
0
.
1
(Rect)
K
/
W
W
0
.
1
2
K
/
0
.
2
5
3 x VSK.170.. Series
Three Phase Bridge
Connected
K
/
W
TJ = 130°C
0
100
200
300
400
5
00
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94417
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
VSK.170PbF, .250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 170/250 A
Vishay High Power Products
130
120
110
100
90
500
VSK.250.. Series
DC
RthJC(DC) = 0.125 K/W
450
180°
120°
90°
60°
30°
400
350
300
250
200
150
100
50
Conduction Angle
RMS Limit
30°
Conduction Period
60°
80
90°
VSK.250.. Series
Per Junction
TJ = 130°C
120°
200
70
180°
250
60
0
0
50
100
150
300
0
50 100 150 200 250 300 350 400
Average On-state Current (A)
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 13 - On-State Power Loss Characteristics
130
7500
VSK.250.. Series
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
7000
RthJC (DC) = 0.125 K/W
120
110
100
90
Initial T = 130°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6500
6000
5500
5000
4500
Conduction Period
30°
100
60°
90°
120°
180°
80
70
4000 VSK.250.. Series
Per Junction
3500
DC
60
0
200
300
400
500
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 11 - Current Ratings Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
350
9000
Maximum Non Repetitive Surge Curren t
180°
120°
90°
Versus Pulse Train Duration. Control
300
250
200
150
100
50
Of Conduction May Not Be Maintained
Initial TJ = 130°C
.
8000
7000
6000
5000
4000
3000
60°
No Voltage Reapplied
Rated VRRM Reapplied
30°
RMS Limit
Conduction Angle
VSK.250.. Series
Per Junction
VSK.250.. Series
Per Junction
T
= 130°C
J
0
0
50
100
150
200
250
0.01
0.1
1
Pulse Train Duration (s)
Average On-state Current (A)
Fig. 12 - On-State Power Loss Characteristics
Fig. 15 - Maximum Non-Repetitive Surge Current
www.vishay.com
6
For technical questions, contact: ind-modules@vishay.com
Document Number: 94417
Revision: 22-Apr-08
VSK.170PbF, .250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 170/250 A
Vishay High Power Products
700
0
.
1
2
180°
120°
90°
K
/
600
500
400
300
200
100
0
W
0
.
1
6
K
/
W
60°
Conduction angle
30°
0
.
2
5
K
/
W
0
.
3
K
/
W
VSK.250.. Series
Per Module
TJ = 130°C
0
100
200 300 400 500
6
00
20
40
60
80
100
120
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
1400
1200
1000
800
600
400
200
0
0
.
0
4
K
/
W
0
.
0
6
K
/
W
180°
(Sine)
180°
(Rect)
0
.
1
2
K
/
W
0
.
1
6
K
/
W
2 x VSK.250.. Series
Single Phase Bridge
Connected
TJ = 130°C
0
100
200
300
400
50
0
20
40
60
80
100
120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
2000
1800
1600
1400
1200
1000
800
0
.
0
5
K
/
W
0
.
0
6
K
/
W
W
120°
0
.
1
(Rect)
K
/
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.
.
2
0
K
/
600
W
3 x VSK.250.. Series
Three Phase Bridge
Connected
0
2
5
K
/
400
W
TJ = 130°C
200
0
0
100 200 300 400 500 600
Total Output Current (A)
7
00
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-State Power Loss Characteristics
Document Number: 94417
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
VSK.170PbF, .250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 170/250 A
Vishay High Power Products
1800
10000
1000
100
VSK.170.. Series
ITM = 800 A
500 A
TJ = 130 °C
1600
1400
1200
1000
800
Per Junction
Tj = 25°C
Tj = 130°C
300 A
200 A
100 A
50 A
600
VSK.170 Series
Per Junction
400
200
0
10 20 30 40 50 60 70 80 90 100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous Forward Voltage (V)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 19 - On-State Voltage Drop Characteristics
10000
Fig. 21 - Reverse Recovery Charge Characteristics
2400
VSK.250.. Series
ITM = 800 A
2200
T = 130
°C
J
Per Junction
500 A
300 A
200 A
2000
1800
1600
1400
1200
1000
800
Tj = 25°C
Tj = 130°C
100 A
1000
50 A
600
VSK.250 Series
Per Junction
400
200
100
0
10 20 30 40 50 60 70 80 90 100
0.5
1
1.5
2 2.5 3 3.5 4 4.5 5 5.5 6
Instantaneous Forward Voltage (V)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 20 - On-State Voltage Drop Characteristics
Fig. 22 - Reverse Recovery Charge Characteristics
100
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
a) Recommended load line for
rated di/dt : 20 V, 10 ohms; tr < =1µs
b) Recommended load line for
<=30% rated di/dt : 10V, 20ohms
tr<=1 µs
10
1
(a)
(b)
(1) (2) (3) (4)
VGD
IGD
0.01
VSK.170/250 Series Frequency Limited by PG(AV)
0.1 10
0.1
0.001
1
100
Instantaneous Gate Current (A)
Fig. 23 - Gate Characteristics
www.vishay.com
8
For technical questions, contact: ind-modules@vishay.com
Document Number: 94417
Revision: 22-Apr-08
VSK.170PbF, .250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 170/250 A
Vishay High Power Products
1
Steady State Value:
R
R
= 0.17 K/W
= 0.125 K/W
VSK.170.. Series
thJC
thJC
(DC Operation)
0.1
0.01
VSK.250.. Series
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 24 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
T
250
-
16 PbF
1
2
3
4
5
-
-
-
-
-
Module type
1
2
3
4
5
Circuit configuration (see dimensions - link at the end of datasheet)
Current rating
Voltage code x 100 = VRRM (see Voltage Ratings table)
Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Document Number: 94417
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
9
VSK.170PbF, .250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 170/250 A
Vishay High Power Products
CIRCUIT CONFIGURATION
VSKH...
VSKL...
VSKT...
~
~
~
~
~
~
+
+
+
+
-
+
-
+
-
-
-
-
K1G1 G2 K2
K1G1
Available from 400 V to 1600 V
VSKU...
VSKK...
VSKN...
VSKV...
+
+
-
-
-
+
+
-
-
+
+
-
-
+
+
-
-
+
+
Available on 1600 V
Contact factory for
different requirement
-
+
-
K1G1 G2 K2
K1G1 G2 K2
G2 K2
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95086
Dimensions
www.vishay.com
10
For technical questions, contact: ind-modules@vishay.com
Document Number: 94417
Revision: 22-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号:
VSKK250-16PBF
Silicon Controlled Rectifier, 250000mA I(T), 1600V V(RRM), ROHS COMPLIANT PACKAGE-5
VISHAY
VSKKF180-08HJP
Silicon Controlled Rectifier, 400A I(T)RMS, 180000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5
VISHAY
VSKKF180-08HKP
Silicon Controlled Rectifier, 400A I(T)RMS, 180000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5
VISHAY
VSKKF180-12HJP
Silicon Controlled Rectifier, 400A I(T)RMS, 180000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5
VISHAY
VSKKF180-12HKP
Silicon Controlled Rectifier, 400A I(T)RMS, 180000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5
VISHAY
VSKKF200-08HKP
Silicon Controlled Rectifier, 444A I(T)RMS, 200000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5
VISHAY
VSKKF200-12HJP
Silicon Controlled Rectifier, 444A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5
VISHAY
VSKKF200-12HKP
Silicon Controlled Rectifier, 444A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5
VISHAY
VSKL105-04
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A
VISHAY
VSKL105-06
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A
VISHAY
VSKL105-08
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A
VISHAY
©2020 ICPDF网 联系我们和版权申明