VSKKF200-12HJP [VISHAY]
Silicon Controlled Rectifier, 444A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5;
| 型号： | VSKKF200-12HJP |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 444A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5 局域网 栅 栅极 |
| 文件： | 总11页 (文件大小：1314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
FEATURES
• Fast turn-off thyristor
• Fast recovery diode
• High surge capability
• Electrically isolated baseplate
• 3500 VRMS isolating voltage
• Industrial standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
MAGN-A-PAK
DESCRIPTION
PRODUCT SUMMARY
This series of MAGN-A-PAK modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and others
where fast switching characteristics are required.
IT(AV)
200 A
Type
Modules - Thyristor, Fast
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
200
UNITS
A
IT(AV)
TC
85
°C
IT(RMS)
ITSM
444
50 Hz
60 Hz
50 Hz
60 Hz
7600
8000
290
A
I2t
kA2s
kA2s
μs
265
I2t
tq
2900
20/25
2
trr
V
DRM/VRRM
800/1200
- 40 to 125
V
TJ
Range
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM/VDRM, MAXIMUM REPETITIVE
V
RSM, MAXIMUM NON-REPETITIVE
IRRM/IDRM
AT TJ = 125 °C
mA
VOLTAGE
CODE
PEAK REVERSE AND OFF-STATE
TYPE NUMBER
PEAK REVERSE VOLTAGE
V
BLOCKING VOLTAGE
V
08
12
800
800
VSK.F200-
50
1200
1200
Document Number: 94422
Revision: 19-Jul-10
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1
VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 µs
2460
180° el
380
180° el
50 Hz
560
690
450
360
280
50
630
710
530
410
300
50
850
1060
760
560
410
50
3180
2080
860
560
-
400 Hz
460
310
250
180
50
1570
630
410
-
2500 Hz
A
V
5000 Hz
10 000 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
50
50
80 % VDRM
80 % VDRM
80 % VDRM
50
85
50
60
-
-
-
-
A/μs
°C
85
60
85
60
10/0.47
10/0.47
10/0.47
/μF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
200
UNITS
A
Maximum average on-state current
at case temperature
180° conduction, half sine wave
85
°C
Maximum RMS on-state current
IT(RMS)
As AC switch
444
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
7600
8000
6400
6700
290
No voltage
reapplied
Maximum peak, one-cycle
non-repetitive on-state,
surge current
A
ITSM
100 % VRRM
reapplied
Sinusoidal
half wave,
initial TJ = 125 °C
No voltage
reapplied
265
Maximum I2t for fusing
I2t
kA2s
205
100 % VRRM
reapplied
187
Maximum I2t for fusing
I2t
VT(TO)1
VT(TO)2
rt1
t = 0.1 ms to 10 ms, no voltage reapplied
2900
kA2s
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
1.18
1.25
0.74
V
(I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum
m
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
rt2
VTM
IH
(I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum
Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse
TJ = 25 °C, IT > 30 A
0.70
1.73
600
V
mA
Maximum latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , Ig = 1A
1000
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Document Number: 94422
Revision: 19-Jul-10
VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
SWITCHING
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
K
J
Gate drive 20 V, 20 , tr 1 ms, VD = 80 % VDRM
TJ = 25 °C
,
Maximum non-repetitive rate of rise
Maximum recovery time
dI/dt
trr
800
2
A/μs
μs
ITM = 350 A, dI/dt = - 25 A/μs, VR = 50 V, TJ = 25 °C
ITM = 750 A; TJ = TJ maximum; dI/dt = - 25 A/μs;
VR = 50 V; dV/dt = 400 V/μs linear to 80 % VDRM
Maximum turn-off time
tq
20
25
BLOCKING
PARAMETER
SYMBOL
dV/dt
TEST CONDITIONS
TJ = 125 °C, exponential to 67 % VDRM
50 Hz, circuit to base, TJ = 25 °C, t = 1 s
TJ = 125 °C, rated VDRM/VRRM applied
VALUES
1000
3000
50
UNITS
V/μs
V
Maximum critical rate of rise of
off-state voltage
RMS insulation voltage
VINS
Maximum peak reverse and off-state
leakage current
IRRM,
IDRM
mA
TRIGGERING
PARAMETER
SYMBOL
PGM
PG(AV)
IGM
TEST CONDITIONS
f = 50 Hz, d% = 50
VALUES
UNITS
Maximum peak gate power
60
10
10
5
W
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
TJ = 125 °C, f = 50 Hz, d% = 50
A
V
TJ = 125 °C, tp 5 ms
-VGT
IGT
200
3
mA
V
TJ = 25 °C, Vak 12 V, Ra = 6
TJ = 125 °C, rated VDRM applied
VGT
IGD
20
0.25
mA
V
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.125
UNITS
Maximum junction operating
temperature range
TJ
°C
Storage temperature range
TStg
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
K/W
Maximum thermal resistance,
case to heatsink per module
RthC-hs
Mounting surface flat, smooth and greased
0.025
A mounting compound is recommended. The
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound. Use of
cable lugs is not recommended, busbar should be
used and restrained during tightening. Threads must
be lubricated with a compound.
MAP to heatsink
busbar to MAP
4 to 6
(35 to 53)
N · m
(lbf · in)
Mounting torque 10 %
500
g
Approximate weight
Case style
17.8
oz.
MAGN-A-PAK
Document Number: 94422
Revision: 19-Jul-10
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3
VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
RthJC CONDUCTION
CONDUCTIONS ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
UNITS
180°
0.009
0.10
0.006
0.011
0.015
0.020
0.033
120°
90°
0.014
0.020
0.32
K/W
60°
30°
Note
•
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
130
120
110
100
90
350
300
250
200
150
100
50
VSK.F200.. Series
thJC
180°
120°
90°
R
(DC ) = 0. 125 K/ W
60°
30°
Conduction Angle
RMS Lim it
30°
Conduction Angle
60°
80
90°
VSK.F200.. Series
Per Junc t io n
70
120°
180°
T = 125° C
J
60
0
0
40
80
120 160 200 240
0
40
80
120
160
200
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
130
120
110
100
90
500
DC
VSK.F200.. Series
thJC
450
R
(DC) = 0.125 K/W
180°
120°
90°
400
350
300
250
200
150
100
50
60°
30°
Conduction Period
RMS Lim it
30°
Conduction Period
80
60°
90°
120°
VSK.F200.. Series
Pe r Ju nc tio n
70
T = 1 25 ° C
J
180°
DC
60
0
0
50 100 150 200 250 300 350
Average On-state Current (A)
0
50 100 150 200 250 300 350
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
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Document Number: 94422
Revision: 19-Jul-10
VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
1
7000
6000
5000
4000
3000
At Any Rated Load Condition And With
Steady State Value:
Rated V
RRM
Applied Following Surge.
R
= 0.125 K/W
thJC
Initial T = 125°C
J
(DC Operation)
@ 60 Hz 0. 008 3 s
@ 50 Hz 0. 010 0 s
0.1
0.01
VSK.F200.. Series
Pe r Jun c tio n
VSK.F200.. Series
Pe r Junc t io n
0.001
0.001
0.01
0.1
1
10
100
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Sq u a r e Wa v e Pu lse D u r a t io n ( s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristics
320
8000
Maximum Non Repetitive Surge Current
I
= 1000 A
500 A
TM
300
280
260
240
220
200
180
160
140
120
100
80
VersusPulse Train Duration. Control
300 A
Of Conduction May Not Be Maintained.
7000
200 A
100 A
Initial T = 125°C
J
No Voltage Reapplied
Ra t e d V
Re a p p lie d
RRM
6000
5000
4000
3000
VSK.F200.. Series
J
VSK.F200.. Series
Pe r Junc tio n
T = 1 25° C
0.01
0.1
Pulse Tra in Dura tion (s)
1
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovery Charge Characteristics
10000
180
I
= 1000A
500A
TM
300A
150
120
90
200A
100A
1000
T = 25 ° C
J
T = 12 5° C
J
60
VSK.F200.. Series
Per Junc tio n
VSK.F200.. Series
T = 125° C
J
30
100
10 20 30 40 50 60 70 80 90 100
1
2
3
4
5
6
7
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
Document Number: 94422
Revision: 19-Jul-10
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5
VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
1E4
50 Hz
150
50 Hz
150
400
1000
400
1E3
1E2
1E1
2500
1000
2500
5000
5000
Snubber circuit
Sn u b b e r c irc u it
VSK.F200.. Series
VSK.F200.. Series
Sinusoidal pulse
R = 10 o h m s
R = 10 o hm s
s
Sin u so id a l p u lse
s
s
D
C
V
= 0.47 µF
C
V
= 0.47 µF
= 80%V
s
D
T
= 8 5° C
tp
T
= 6 0° C
tp
C
C
= 80%V
DRM
DRM
11E1
1E2
1E3
1E4
1E4
1E4
1E1
1E2
1E3
1E4
Pulse Ba se wid t h (µs)
Pulse Ba se w id t h (µs)
Fig. 11 - Frequency Characteristics
1E4
1E3
1E2
VSK.F200.. Series
Tr a p e zo id a l p u lse
VSK.F200.. Series
Trapezoidal pulse
T = 85 ° C d i/ d t 100A / µ s
T = 85 ° C d i/ d t 5 0A / µ s
tp
tp
C
C
50 Hz
50 Hz
150
150
400
400
1000
1000
2500
5000
2500
5000
Sn u b b e r c ir c u it
Sn u b b e r c irc u it
R = 10 o h m s
R = 10 o hm s
s
s
C
V
= 0.47 µF
= 80%V
C
V
= 0.47 µF
= 80%V
s
s
D
DRM
DRM
D
1E1
1E2
1E3
1E1
1E2
1E3
1E14
Pulse Ba se wid t h (µs)
Pulse Ba se w id t h ( µs)
Fig. 12 - Frequency Characteristics
1E4
1E3
1E2
50 Hz
50 Hz
150
400
150
400
1000
2500
1000
2500
5000
5000
Snubber circuit
Sn u b b e r c ir c u it
R = 10 o h m s
C
V
VSK.F200.. Series
Tra p e zo id a l p u lse
T = 60°C di/dt 100A/µs
VSK.F200.. Series
Trapezoidal pulse
R = 10 o hm s
s
s
D
s
C
V
= 0.47 µF
= 80%V
= 0.47 µF
= 80%V
s
tp
C
T = 6 0 ° C d i/ d t 5 0 A / µ s
tp
DRM
C
D
DRM
1E1
1E2
1E3
1E1
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
Pulse Ba se w id t h ( µs)
Fig. 13 - Frequency Characteristics
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Document Number: 94422
Revision: 19-Jul-10
VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
1E4
1E3
1E2
1E1
10 joules per pulse
10 joulesper pulse
5
5
2.5
2.5
1
0.5
1
0.5
0.25
0.25
0.1
0.05
0.1
0.05
VSK.F200.. Series
Trapezoidal pulse
di/dt 50A/µs
VSK.F200.. Series
Si n u so i d a l p u lse
tp
tp
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E14
Pulse Ba se w id t h ( µs)
Pulse Ba se w id t h (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 8W, tp = 25ms
(2) PGM = 20W, tp = 1ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 80W, tp = 2.5ms
a) Recommended load line for
rated di/dt : 10V, 10ohms
b) Recommended load line for
<=30%rated di/dt : 10V, 20ohms
(a)
(b)
(1)
(2)
(3) (4)
VGD
IGD
VSK.F200.. Series Frequency Limited by PG(AV)
0.1
0.01
0.1
1
10
100
Inst a nt a n e o us G a t e Cu rre nt (A )
Fig. 15 - Gate Characteristics
Document Number: 94422
Revision: 19-Jul-10
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7
VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
ORDERING INFORMATION TABLE
Device code
VSK
T
F
200
-
12
H
K
P
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
-
-
Module type
Circuit configuration (see circuit configuration table)
Fast SCR
Current rating: IT(AV) x 10 rounded
-
-
-
-
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
dV/dt code: H ≤ 400 V/µs
tq code: K ≤ 20 µs
J ≤ 25 µs
8
-
Lead (Pb)-free
Note
•
To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
VSKUF..
K2
G2
+
-
-
G1
K1
Two SCRs common cathodes
U
+
-
-
VSKKF..
K2
G2
+
-
-
SCR/diode common cathodes
K
+
-
-
VSKVF..
K2
G2
-
+
+
G1
K1
Two SCRs common anodes
V
-
+
+
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Document Number: 94422
Revision: 19-Jul-10
VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
VSKNF..
+
-
+
G1
K1
SCR/diode common anodes
N
-
+
+
VSKLF..
K2
G2
~
+
-
SCR/diode doubler circuit, negative control
L
~
+
-
VSKTF..
K2
G2
~
+
-
G1
K1
Two SCRs doubler circuit
T
~
+
-
VSKHF..
+
~
-
G1
K1
SCR/diode doubler circuit, positive control
H
~
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95086
Document Number: 94422
Revision: 19-Jul-10
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Outline Dimensions
Vishay Semiconductors
MAGN-A-PAK
DIMENSIONS in millimeters (inches)
Ø 5.5
35 (1.38)
28 (1.12)
3 screws M8 x 1.25
80 (3.15)
9 (0.35)
6 (0.24)
115 (4.53)
HEX 13
92 (3.62)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Document Number: 95086
Revision: 03-Aug-07
For technical questions, contact: indmodules@vishay.com
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Disclaimer
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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