VSKKF180-12HJP [VISHAY]
Silicon Controlled Rectifier, 400A I(T)RMS, 180000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5;
| 型号： | VSKKF180-12HJP |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 400A I(T)RMS, 180000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5 局域网 栅 栅极 |
| 文件： | 总11页 (文件大小：1402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
FEATURES
• Fast turn-off thyristor
• Fast recovery diode
• High surge capability
• Electrically isolated baseplate
• 3000 VRMS isolating voltage
• Industrial standard package
• UL approved file E78996
MAGN-A-PAK
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
PRODUCT SUMMARY
These series of MAGN-A-PAK modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and others
where fast switching characteristics are required.
IT(AV)
180 A
Type
Modules - Thyristor, Fast
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
180
UNITS
A
IT(AV)
TC
85
°C
IT(RMS)
ITSM
400
50 Hz
60 Hz
50 Hz
60 Hz
7130
7470
255
A
I2t
kA2s
kA2s
μs
232
I2t
tq
2550
20/25
2
trr
V
DRM/VRRM
800/1200
- 40 to 125
V
TJ
Range
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM/VDRM, MAXIMUM REPETITIVE
V
RSM, MAXIMUM NON-REPETITIVE
I
RRM/IDRM MAXIMUM
AT TJ = 125 °C
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK REVERSE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
08
12
800
800
VSK.F180-
50
1200
1200
Document Number: 93685
Revision: 19-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 µs
2400
180° el
370
180° el
50 Hz
530
650
430
345
270
565
670
490
390
290
800
1000
720
540
390
3150
2050
830
540
-
400 Hz
435
290
240
170
1540
610
390
-
2500 Hz
A
V
5000 Hz
10 000 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dl/dt
Case temperature
Equivalent values for RC circuit
50
50
50
80 % VDRM
50
80 % VDRM
-
80 % VDRM
-
A/μs
°C
85
60
85
60
85
60
10/0.47
10/0.47
10/0.47
/μF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
180
UNITS
A
Maximum average on-state current
at case temperature
180° conduction, half sine wave
85
°C
Maximum RMS current
IT(RMS)
As AC switch
400
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
7130
7470
6000
6280
255
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
232
Maximum I2t for fusing
I2t
kA2s
180
100 % VRRM
reapplied
164
Maximum I2t for fusing
I2t
VT(TO)1
VT(TO)2
rt1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
2550
1.30
1.38
0.90
0.71
1.84
600
kA2s
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
V
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
m
V
rt2
VTM
IH
Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse
TJ = 25 °C, IT > 30 A
mA
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , Ig = 1A
1000
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Document Number: 93685
Revision: 19-Jul-10
VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
SWITCHING
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
K
J
Gate drive 20 V, 20 , tr 1 ms, VD = 80 % VDRM
TJ = 25 °C
Maximum non-repetitive rate of rise
Maximum recovery time
dI/dt
trr
800
2
A/μs
μs
ITM = 350 A, dI/dt = - 25 A/μs, VR = 50 V, TJ = 25 °C
ITM = 750 A; TJ = 125 °C; dI/dt = - 25 A/μs;
VR = 50 V; dV/dt = 400 V/μs linear to 80 % VDRM
Maximum turn-off time
tq
20
25
BLOCKING
PARAMETER
SYMBOL
dV/dt
TEST CONDITIONS
VALUES
1000
3000
50
UNITS
V/μs
V
Maximum critical rate of rise
of off-state voltage
TJ = 125 °C, exponential to 67 % VDRM
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
TJ = 125 °C, rated VDRM/VRRM applied
RMS insulation voltage
VINS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
mA
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
f = 50 Hz, d% = 50
VALUES
UNITS
Maximum peak gate power
60
10
10
5
W
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
PG(AV)
IGM
- VGM
IGT
TJ = 125 °C, f = 50 Hz, d% = 50
A
V
TJ = 125 °C, tp 5 ms
200
3
mA
V
TJ = 25 °C, Vak 12 V, Ra = 6
TJ = 125 °C, rated VDRM applied
VGT
IGD
20
0.25
mA
V
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.125
UNITS
Maximum junction operating
temperature range
TJ
°C
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
K/W
Maximuml thermal resistance,
case to heatsink per module
RthCS
Mounting surface, flat and greased
0.02
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to
allow for the spread of the compound. Use of cable
lugs is not recommended, busbar should be used
and restrained during tightening. Threads must be
lubricated with a compound.
MAP to heatsink
busbar to MAP
4 to 6
(35 to 53)
N · m
(lbf · in)
Mounting torque 10 %
500
g
Approximate weight
Case style
17.8
oz.
MAGN-A-PAK
Document Number: 93685
Revision: 19-Jul-10
For technical questions within your region, please contact one of the following:
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3
VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
RthJC CONDUCTION
CONDUCTIONS ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION TEST CONDITIONS
UNITS
180°
120°
90°
0.009
0.010
0.014
0.020
0.032
0.006
0.011
0.015
0.020
0.033
TJ = 125 °C
K/W
60°
30°
Note
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
•
130
120
110
100
90
350
300
250
200
150
100
50
VSK.F180.. Series
(DC) = 0.125 K/W
180°
120°
90°
R
thJC
60°
30°
Conduction Angle
RMS Limit
30°
Conduction Angle
80
60°
90°
VSK.F180.. Series
Per Junction
120°
180°
70
T
= 125 °C
J
60
0
0
40
80
120
160
200
0
20 40 60 80 100 120 140 160 180
Average O n-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
130
120
110
100
90
450
VSK.F180.. Series
DC
R
(DC ) = 0.125 K/W
400
350
300
250
200
150
100
50
thJC
180°
120°
90°
60°
30°
Conduction Pe riod
RM S Lim it
30°
Conduction Pe riod
60°
80
90°
VSK.F180.. Series
Per Junction
120°
70
T
= 125 °C
180°
200
J
DC
250
60
0
0
50
100
150
300
0
50
100
150
200
250
300
Average On-state Current (A)
Average O n-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
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Document Number: 93685
Revision: 19-Jul-10
VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
1
6500
6000
5500
5000
4500
4000
3500
3000
At A ny Rated Load Condition A nd W ith
Steady State Value:
= 0.125 K/W
Rated V
Applied Following Surg e.
RRM
R
thJC
(DC Operation)
Initial T = 125 °C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
0.1
0.01
VSK.F180.. Series
Per Junction
VSK.F180.. Series
Per Junction
0.001
0.001
0.01
0.1
1
10
100
1
10
100
Nu m b er Of Equ a l Am plitude Half C ycle C urrent Pu lse s (N)
Square Wave Pulse Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristics
320
7500
Ma xim um Non Rep etitive Surge Current
I
= 1000 A
500 A
TM
300
280
260
240
220
200
180
160
140
120
100
80
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
300 A
200 A
100 A
Initial T = 125 °C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
VSK.F180.. Series
= 125 °C
VSK.F180.. Series
Per Junction
T
J
10 20 30 40 50 60 70 80 90 100
0.01
0.1
Pulse Train Duration (s)
1
Rate Of Fall Of Forw ard Current - di/dt (A/μs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovery Charge Characteristics
10000
180
I
= 1000A
500A
TM
160
140
120
100
80
300A
200A
100A
1000
T
T
= 25 °C
J
J
= 125 °C
60
VSK.F180.. Series
= 125 °C
VSK.F180.. Series
Per Junction
T
40
J
20
100
10 20 30 40 50 60 70 80 90 100
1
2
3
4
5
6
7
Rate Of Fall Of Forw ard Current - di/dt (A/μs)
Instantaneous O n-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Document Number: 93685
Revision: 19-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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5
VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
1E4
50 Hz
150
50 H z
150
400
1000
400
2500
1E3
1E2
1E1
1000
2500
5 00 0
5 00 0
Snubber circuit
VSK.F180.. Series
Sinusoidal pulse
TC = 60 °C
VSK.F180.. Series
Sinusoida l pulse
= 85 °C
R
C
V
= 10 ohms
= 0.47 μF
= 80% V
DRM
s
s
T
tp
tp
C
D
1E1
1E2
1E3
1E4
1E4
1E4
1E1
1E2
1E3
1E14
Pulse Basewidth (μs)
Pulse Basewidth (μs)
Fig. 11 - Frequency Characteristics
1E4
1E3
1E2
1E1
50 Hz
50 Hz
150
150
400
400
1 00 0
1 00 0
2500
2500
5 00 0
5000
Snubber circuit
Snubber circuit
VSK.F180.. Series
Trapezoidal pulse
VSK.F180.. Series
Trapezoid al pulse
R
C
V
= 10 ohms
= 0.47 μF
= 80% V
R
C
V
= 10 ohms
= 0.47 μF
D
s
s
D
s
s
T
= 85 °C di/dt 100A/μs
tp
C
T
= 85 °C di/dt 50A/μs
tp
C
= 80% V
DRM
DRM
1E1
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Basewidth (μs)
Pulse Basewidth (μs)
Fig. 12 - Frequency Characteristics
1E4
1E3
1E2
1E1
50 H z
50 Hz
150
150
400
400
1000
1 00 0
2500
2500
5000
5000
Snubber circuit
Snubber circuit
VSK.F180.. Series
Trapezoidal pulse
VSK.F180.. Series
Trapezoidal pulse
R
C
V
= 10 ohm s
= 0.47 μF
= 80% V
R
C
V
= 10 ohms
= 0.47 μF
= 80%
s
s
D
s
s
D
T
= 60 °C di/dt 100A/μs
T
= 60 °C di/dt 50A/μs
tp
C
tp
C
V
DRM
DRM
1E1
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Basewidth (μs)
Pulse Basewidth (μs)
Fig. 13 - Frequency Characteristics
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Document Number: 93685
Revision: 19-Jul-10
VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
1E4
1E3
1E2
1E1
10 joules per pulse
5
10 joules per pulse
2.5
5
2.5
1
0.5
1
0.5
0.25
0.25
0.1
0.05
0.1
0.05
VSK.F180.. Series
Trapezoidal pulse
di/dt 50A/μs
VSK.F180.. Series
Sinusoidal pulse
tp
tp
1E1
1E2
1E3
1E4
1E4
1E1
1E2
1E3
Pulse Basewidth (μs)
Pulse Basewidth (μs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 8W , tp = 25ms
(2) PGM = 20W , tp = 1ms
(3) PGM = 40W , tp = 5ms
(4) PGM = 80W, tp = 2.5m s
a) Recom mended load line for
rated di/dt : 10V, 10ohm s
b) Recomm ended load line for
<=30% rated di/dt : 10V, 20ohm s
(a )
(b)
(1)
(2)
(4)
(3)
VGD
IGD
VSK.F180.. Series
1
Frequency Lim ited by PG(AV)
10 100
0.1
0.01
0.1
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Document Number: 93685
Revision: 19-Jul-10
For technical questions within your region, please contact one of the following:
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7
VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
ORDERING INFORMATION TABLE
Device code
VSK
T
F
180
-
12
H
K
P
1
2
3
4
5
6
7
8
1
2
-
-
Module type
Circuit configuration (see circuit configuration table)
Fast SCR
Current rating: IT(AV) x 10 rounded
Voltage code x 100 = VRRM (see Voltage Ratings table)
dV/dt code: H ≤ 400 V/μs
3
4
5
6
7
-
-
-
-
-
tq code: K ≤ 20 μs
J ≤ 25 μs
8
-
P = Lead (Pb)-free
Note
•
To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
VSKUF..
K2
G2
+
-
-
G1
K1
Two SCRs common cathodes
U
+
-
-
VSKKF..
K2
G2
+
-
-
SCR/diode common cathodes
K
+
-
-
VSKVF..
K2
G2
-
+
+
G1
K1
Two SCRs common anodes
V
-
+
+
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Document Number: 93685
Revision: 19-Jul-10
VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
VSKNF..
+
-
+
G1
K1
SCR/diode common anodes
N
-
+
+
VSKLF..
K2
G2
~
+
-
SCR/diode doubler circuit, negative control
L
~
+
-
VSKTF..
K2
G2
~
+
-
G1
K1
Two SCRs doubler circuit
T
~
+
-
VSKHF..
+
~
-
G1
K1
SCR/diode doubler circuit, positive control
H
~
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95086
Document Number: 93685
Revision: 19-Jul-10
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9
Outline Dimensions
Vishay Semiconductors
MAGN-A-PAK
DIMENSIONS in millimeters (inches)
Ø 5.5
35 (1.38)
28 (1.12)
3 screws M8 x 1.25
80 (3.15)
9 (0.35)
6 (0.24)
115 (4.53)
HEX 13
92 (3.62)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Document Number: 95086
Revision: 03-Aug-07
For technical questions, contact: indmodules@vishay.com
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1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
相关型号：
VSKKF180-12HKP
Silicon Controlled Rectifier, 400A I(T)RMS, 180000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5
VISHAY
VSKKF200-08HKP
Silicon Controlled Rectifier, 444A I(T)RMS, 200000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5
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VSKKF200-12HJP
Silicon Controlled Rectifier, 444A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5
VISHAY
VSKKF200-12HKP
Silicon Controlled Rectifier, 444A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5
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VSKL105-04
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A
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VSKL105-06
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A
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VSKL105-08
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A
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VSKL105-10
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A
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VSKL105-12
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A
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VSKL105-14
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A
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VSKL105-16
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A
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VSKL105/04
Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-240AA, ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-5
VISHAY
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