VSKEL240-25S30 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 240A, 2500V V(RRM), Silicon, ROHS COMPLIANT, MAGN-A-PAK-2;
| 型号： | VSKEL240-25S30 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 240A, 2500V V(RRM), Silicon, ROHS COMPLIANT, MAGN-A-PAK-2 快速恢复大电源 快速恢复二极管 局域网 高功率电源 |
| 文件： | 总12页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
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Vishay Semiconductors
Fast Recovery Diodes, 250 A
(MAGN-A-PAK Power Modules)
FEATURES
• Fast recovery time characteristics
• Electrically isolated base plate
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• 3000 VRMS isolating voltage
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
MAGN-A-PAK
DESCRIPTION
The VSK.L240 Series of MAGN-A-PAKs uses fast recovery
power diodes in four basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. Application includes power supplies, battery
chargers, welders, motor controls and general industrial
current rectification. These modules are intended for those
applications where fast recovery characteristics are
required.
PRODUCT SUMMARY
IF(AV)
250 A
Type
Modules - Diode, Fast
MAJOR RATINGS AND CHARACTERISTICS
VSK.L240
UNITS
SYMBOL
CHARACTERISTICS
S10/S20
S30
240
250
100
A
IF(AV)
IF(RMS)
IFSM
TC
100
°C
392
377
50 Hz
60 Hz
50 Hz
60 Hz
8000
8400
322
7500
7850
280
A
I2t
kA2s
294
256
I2t
VRRM
TJ
3220
2800
kA2s
V
Range
Range
600 to 2500
- 40 to 150
°C
Revision: 07-Oct-11
Document Number: 93164
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM MAXIMUM
AT 150 °C
mA
VOLTAGE
CODE
trr
CODE
TYPE NUMBER
06
10
12
14
20
25
S10
S10
S20
S20
S30
S30
600
700
1000
1200
1400
2000
2500
1100
1300
1500
2100
2600
VSK.L240
50
FORWARD CONDUCTION
VSK.L240
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
S10/S20
S30
240
250
100
A
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
As AC switch
100
°C
Maximum RMS forward current
IF(RMS)
392
377
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
8000
8400
6750
7100
322
7500
7850
6300
6600
280
No voltage
reapplied
A
Maximum peak, one-cycle forward
non-repetitive, surge current
IFSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
294
256
Maximum I2t for fusing
I2t
kA2s
228
198
100 % VRRM
reapplied
208
181
Maximum I2t for fusing
I2t
VF(TO)1
VF(TO)2
rf1
t = 0.1 ms to 10 ms, no voltage reapplied
3220
2800
kA2s
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
0.98
1.31
0.75
0.41
1.57
0.98
1.31
0.97
0.60
1.75
V
(I > x IF(AV)), TJ = TJ maximum
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
m
rf2
(I > x IF(AV)), TJ = TJ maximum
IFM = 800 A, TJ = 150 °C, tp = 10 ms
Average power = VF(TO) x IF(AV) + rf x (IF(RMS)
VFM
V
2
)
Revision: 07-Oct-11
Document Number: 93164
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RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TYPICAL VALUES
AT TJ = 150 °C
TEST CONDITIONS
trr
CODE
Ipk
IFM
dI/dt
(A/μs)
t
rr AT 25 % IRRM
(μs)
Vr
(V)
Qrr
(μC)
Ir
(A)
SQUARE PULSE
(A)
AT 25 % IRRM
(μs)
trr
t
di
dt
S10
S20
S30
1.0
2.0
3.0
2.7
3.5
3.6
135
250
360
100
145
200
Qrr
500
100
- 50
IRM(REC)
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse leakage current
IRRM
TJ = 150 °C, leakage current
50
mA
50 Hz, circuit to base, all terminals shorted,
25 °C, t = 1 s
RMS insulation voltage
VINS
3000
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating and
storage temperature range
TJ, TStg
- 40 to 150
0.125
°C
Maximum internal thermal resistance,
junction to case per junction
RthJC
RthCS
DC operation
K/W
Nm
Thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
0.02
A mounting compound is recommended
and the torque should be rechecked after a
period of about 3 hours to allow for the
spread of the compound.
MAP to heatsink
busbar to MAP
4 to 6
Mounting torque 10 %
8 to 10
850
30
g
Approximate weight
Case style
oz.
MAGN-A-PAK
R CONDUCTION PER JUNCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.008
0.010
0.013
0.019
0.032
0.007
0.011
0.015
0.020
0.033
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
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150
140
130
120
110
100
90
600
500
400
300
200
100
0
VSK. L2 4 0. . S1 0/ S2 0 Se rie s
DC
R
(DC) = 0.125 K/W
Conduction Angle
180°
120°
90°
thJC
60°
30°
RMS Lim it
Conduction Period
30°
60°
90°
120°
180°
VSK.L240..S10/S20 Series
T = 1 50° C Pe r J u n c t io n
J
80
0
50
100 150 200 250 300
0
50 100 150 200 250 300 350 400
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
8000
At Any Rated Load Condition And With
VSK.L240..S10/ S20 Series
thJC
Rated V
Applied Following Surge.
R
( DC ) = 0. 125 K/ W
RRM
7000
6000
5000
4000
3000
2000
Initial T = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
Conduction Period
30°
60°
90°
120°
VSK. L240. . S10/ S2 0 Se ri e s
Per Junc t ion
180°
DC
80
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
8500
400
350
300
250
200
150
100
50
Maximum Non Repetitive Surge Current
180°
120°
90°
VersusPulse Train Duration.
7500
Initial T = 150°C
J
No Voltage Reap plied
60°
6500
5500
4500
3500
2500
1500
Rated V
Reapplied
RRM
30°
RMS Lim it
Conduction Angle
VSK.L240..S10/ S20 Series
VSK.L240..S10/S20 Series
Per Junc t ion
Per Junc tion T = 150°C
J
0
0
50
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
100
150
200
250
0.01
0.1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
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550
500
450
400
350
300
250
200
150
100
50
150
140
130
120
110
100
90
DC
180°
120°
90°
VSK.L240..S30 Series
R
( DC ) = 0.125 K/ W
Conduction Angle
thJC
60°
30°
RM S Lim it
Conduction Period
30°
60°
90°
VSK. L2 4 0 . . S3 0 Se rie s
Per Junc tion
T = 1 5 0 ° C
120°
180°
J
80
0
0
50
100
150
200
250
0
50 100 150 200 250 300 350 400
Average Forward Current (A)
Average Forward Current (A)
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
7000
VSK. L24 0. . S3 0 Se rie s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
R
(DC) = 0.125 K/W
thJC
RRM
Initial T = 150°C
J
6000
5000
4000
3000
2000
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Conduction Period
30°
60°
90°
120°
VSK.L240..S30 Series
Per Junc tio n
180°
DC
80
0
50 100 150 200 250 300 350 400
Average Forward Current (A)
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 8 - Current Ratings Characteristics
Fig. 11 - Maximum Non-Repetitive Surge Current
400
350
300
250
200
150
100
50
8000
Maximum Non Repetitive Surge Current
180°
120°
90°
Versus Pulse Train Duration.
7000
Initial T = 150°C
J
No Voltage Reapplied
60°
6000
5000
4000
3000
2000
1000
Rated V
Reapplied
30°
RRM
RM S Lim it
Conduction Angle
VSK.L240..S30 Series
Per Junc tion
T = 150°C
VSK.L240..S30 Series
Per Junc tion
J
0
0.01
0.1
1
0
50
Average Forward Current (A)
Fig. 9 - Forward Power Loss Characteristics
100
150
200
250
Pu lse Tra in Dura t io n (s)
Fig. 12 - Maximum Non-Repetitive Surge Current
Revision: 07-Oct-11
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10000
1000
100
110
100
90
80
70
60
50
40
30
20
10
I
= 1000A
500A
200A
100A
50A
VSK. L24 0 . . S1 0 / S2 0 Se rie s
Pe r Junc t io n
FM
T = 25° C
J
T = 1 50° C
J
VSK.L240..S10 Se ries
T = 150 °C
J
1
1.5
InstantaneousForward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
2
2.5
3
3.5
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 16 - Reverse Recovery Current Characteristics
10000
500
VSK.L240..S20
J
VSK.L240..S30 Series
Per Junc tio n
I
= 1000A
450
400
350
300
250
200
150
100
50
FM
T = 1 50 ° C
500A
200A
1000
100A
50A
T = 25 ° C
J
T = 15 0° C
J
100
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
50
100
150
200
Ra t e Of Fa ll Of Fo rw a rd C urre n t - d i/ d t (A/ µs)
InstantaneousForward Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
Fig. 17 - Reverse Recovery Charge Characteristics
150
300
VSK.L240..S10
140
130
120
110
100
90
80
70
60
50
VSK.L240..S20
J
I
= 1000A
FM
T = 150° C
T = 150 °C
I
= 1000A
500A
J
FM
250
200
150
100
50
500A
200A
100A
50A
200A
100A
50A
40
30
20
0
10
10 20 30 40 50 60 70 80 90 100
0
50
100
150
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 15 - Reverse Recovery Charge Characteristics
Fig. 18 - Reverse Recovery Current Characteristics
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500
450
400
350
300
250
200
150
100
50
300
250
200
150
100
50
I
= 1000A
FM
I
= 1000A
FM
500A
100A
500A
100A
VSK.L240..S30 Series
VSK.L240..S30 Series
T = 150 °C
T = 150 °C
J
J
0
0
0
50
100
150
200
0
50
100
150
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 19 - Reverse Recovery Charge Characteristics
Fig. 20 - Reverse Recovery Current Characteristics
1E5
20 joulesper pulse
20 joulesper pulse
10
1E4
1E3
1E2
1E1
1E0
10
4
4
2
2
1
1
0.4
0.4
0.2
0.1
0.04
0.02
0.2
0.1
0.04
0.02
0.01
0.01
VSK.L240..S10/ S20
Trapezoidal Pulse
VSK.L240..S10/ S20
Sin u so id a l Pu lse
tp
T = 150 °C
tp
J
T = 150 ° C
J
1E1
E1
1E2
1E3
1E4
1E4
4
1E1
1E2
1E3
Pu lse Ba se w id t h (µs)
Pulse Ba se wid th (µs)
Fig. 21 - Maximum Forward Energy Power Loss Characteristics
1E5
1E4
1E3
1E2
VSK.L240..S10/ S20
Sinusoidal Pulse
C
VSK.L240..S10/ S20
Sin u so i d a l Pu lse
= 100 °C
tp
T
tp
T
= 9 0 ° C
C
20000 10000 5000 2500 1500
200
50 Hz
1000
400
20000
5000
1500
2500 1000
10000
400
200
50 Hz
1E11E1
1E2
1E3
1E4
1E4
1E4
1E1
1E2
1E3
Pulse Ba se w id t h (µs)
Pulse Basewidth (µs)
Fig. 22 - Frequency Characteristics
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1E5
1E4
1E3
1E2
VSK.L240..S10/ S20
Trapezoidal Pulse
VSK.L240..S10/ S20
Trapezoidal Pulse
C
tp
T = 90 °C
tp
T
= 100 °C
C
2500 1500
400 200
50 Hz
1000
2500
1500 1000
400
200
50 Hz
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Ba se w id th (µs)
Fig. 23 - Frequency Characteristics
1E5
1E4
1E3
1E2
1E1
1E0
20 joulesper pulse
10
20 joules per pulse
4
2
10
4
1
2
0.4
1
0.2
0.4
0.2
0.1
0.04
0.02
0.01
0.1
0.04
0.02
0.01
VSK.L240..S30
VSK.L240..S30
Sinusoidal Pulse
Trapezoidal Pulse
tp
T = 150 °C
J
tp
T = 150 ° C
J
1E1
1E2
1E3
1E4
1E4
1E41
1E1
1E2
1E3
Pulse Ba se wid t h (µs)
Pulse Ba se w id t h (µs)
Fig. 24 - Maximum Forward Energy Power Loss Characteristics
1E5
1E4
1E3
1E2
VSK.L240..S30
Si n u so id a l Pu l se
= 100 °C
VSK.L240..S30
Si n u so id a l Pu l se
T
tp
C
tp
T = 90 ° C
C
50 Hz
400
200
20000 10000 5000 2500 1500
1000
1000
50 Hz
1500
400
20000
2500
200
10000
5000
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 25 - Frequency Characteristics
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1E5
1E4
1E3
1E2
VSK.L240..S30
VSK.L240..S30
Tra p e zo i d a l Pu lse
Trapezoidal Pulse
T
= 1 00 ° C
T
= 90 ° C
C
C
tp
tp
5000 2500
50 Hz
5000 2500 1500
1500
1000
1000
400
200
50 Hz
400
200
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
Pulse Ba se wid t h (µs)
Fig. 26 - Frequency Characteristics
1
St e a d y St a t e V a l u e :
R
= 0.125 K/W
thJC
(DC Operation)
0.1
0.01
0.001
0.0001
VSK.L240.. Series
Pe r Junc t ion
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 27 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
D
L
240
-
25 S30
1
2
3
4
5
6
1
2
3
4
5
6
-
-
Module type
Circuit configuration (see Circuit Configuration table)
-
-
-
-
L = Fast recovery diode
Current rating
Voltage code x 100 = VRRM (see Voltage Ratings table)
trr code (see Recovery Characteristics table)
S10 = 1000 ns
S20 = 2000 ns
S30 = 3000 ns
Revision: 07-Oct-11
Document Number: 93164
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CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT
CIRCUIT DRAWING
VSKD...
-
+
~
Two diodes doubler circuit
Two diodes common cathodes
Two diodes common anodes
D
C
J
-
+
~
VSKC...
-
+
-
+
-
-
VSKJ...
-
+
+
-
+
+
VSKE...
+
-
-
Single diode
E
+
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95086
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
MAGN-A-PAK
DIMENSIONS in millimeters (inches)
Ø 5.5
35 (1.38)
28 (1.12)
3 screws M8 x 1.25
80 (3.15)
9 (0.35)
6 (0.24)
115 (4.53)
HEX 13
92 (3.62)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Document Number: 95086
Revision: 03-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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