VSKH105/06 [VISHAY]
Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-240AA, ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-5;
| 型号： | VSKH105/06 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-240AA, ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-5 局域网 栅 栅极 |
| 文件： | 总9页 (文件大小：436K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRODUCT SUMMARY
• Up to 1600 V
IT(AV) or IF(AV)
105 A
• High surge capability
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
The ADD-A-PAK Generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IT(AV) or IF(AV)
IO(RMS)
CHARACTERISTICS
VALUES
105
UNITS
85 °C
As AC switch
50 Hz
235
A
2000
ITSM,
IFSM
60 Hz
2094
50 Hz
20
I2t
kA2s
60 Hz
18.26
200
I2√t
VRRM
TStg
TJ
kA2√s
Range
400 to 1600
V
- 40 to 130
°C
Document Number: 94628
Revision: 17-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM, IDRM
VOLTAGE
CODE
TYPE NUMBER
AT 130 °C
mA
04
06
08
10
12
14
16
400
600
500
700
400
600
800
900
800
VSK.105
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
20
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
180° conduction, half sine wave,
C = 85 °C
VALUES
UNITS
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
105
T
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
or
IO(RMS)
235
I(RMS)
I(RMS)
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
2000
2094
1682
1760
20
No voltage
reapplied
ITSM
or
IFSM
Sinusoidal
half wave,
initial TJ = TJ maximum
Maximum peak, one-cycle non-repetitive
on-state or forward current
100 % VRRM
reapplied
No voltage
reapplied
18.26
14.14
12.91
Maximum I2t for fusing
I2t
Initial TJ = TJ maximum
kA2s
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Maximum I2√t for fusing
I2√t (1)
200
kA2√s
Low level (3)
0.98
1.12
2.7
(2)
Maximum value or threshold voltage
VT(TO)
TJ = TJ maximum
V
High level (4)
Low level (3)
Maximum value of on-state
slope resistance
(2)
rt
TJ = TJ maximum
mΩ
High level (4)
2.34
VTM
VFM
ITM = π x IT(AV)
TJ = 25 °C
Maximum peak on-state or forward voltage
1.8
V
IFM = π x IF(AV)
Maximum non-repetitive rate of rise of
turned on current
TJ = 25 °C, from 0.67 VDRM
,
dI/dt
150
A/μs
I
TM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
Maximum latching current
IH
IL
250
400
mA
TJ = 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(2)
(3)
(4)
I2t for time tx = I2√t x √tx
Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
16.7 % x π x IAV < I < π x IAV
I > π x IAV
2
)
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94628
Revision: 17-May-10
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
12
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
W
A
PG(AV)
IGM
3
3
- VGM
10
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
4.0
2.5
1.7
270
150
80
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
VGT
Anode supply = 6 V
resistive load
IGT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
VGD
IGD
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 130 °C, gate open circuit
20
mA
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
VINS
50 Hz
V
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 130 °C, linear to 0.67 VDRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction operating temperature range
Storage temperature range
TJ
- 40 to 130
°C
TStg
Maximum internal thermal resistance,
junction to case per leg
RthJC
RthCS
DC operation
0.22
°C/W
Nm
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
0.1
4
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound.
to heatsink
busbar
Mounting torque 10 %
3
75
g
Approximate weight
Case style
2.7
oz.
JEDEC
TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
°C/W
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.105..
0.04
0.048
0.063
0.085
0.125
0.033
0.052
0.067
0.088
0.127
Note
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
•
Document Number: 94628
Revision: 17-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
Vishay Semiconductors
130
120
110
100
90
260
240
220
200
180
160
140
120
100
80
RthJC (DC) = 0.22°C/W
180°
120°
90°
60°
30°
DC
RMS limit
180°
120°
90°
60
40
20
80
60°
Per leg, Tj = 130°C
30°
70
0
0
20
40
60
80
100 120
0
20 40 60 80 100 120 140 160 180
Average on-state current (A)
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
130
120
110
100
90
1800
RthJC (DC) = 0.22°C/W
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
1600
1400
1200
1000
800
DC
180°
120°
90°
60°
30°
80
Per leg
70
0
20 40 60 80 100 120 140 160 180
Average on-state current (A)
1
10
100
Number of equal amplitude half cycle current pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
200
180
160
140
120
100
80
2000
180°
120°
90°
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 130°C
1800
1600
1400
1200
1000
800
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
60
40
Per leg
20
Per leg, Tj = 130°C
0
0.01
0.1
1
0
20
Average on-state current (A)
Fig. 3 - On-State Power Loss Characteristics
40
60
80
100 120
Pulse train duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94628
Revision: 17-May-10
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
Vishay Semiconductors
400
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
350
300
250
200
150
100
50
180°
120°
90°
60°
30°
2°C/W
VSK.105 Series
Per module
Tj = 130°C
0
0
0
0
40
80
120 160 200 2400 20 40 60 80 100 120 140
Total RMS output current (A)
Maximum allowable ambient temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
700
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
180°
(sine)
180°
(rect)
2 °C/W
∼
2 x VSK.105 Series
single phase bridge connected
Tj = 130°C
40
80
120
160
2000 20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 8 - On-State Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
120°
(rect)
3 x VSK.105 Series
three phase bridge connected
Tj = 130°C
40
80
120 160 200 240
0 20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94628
Revision: 17-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
Vishay Semiconductors
1000
Per leg
100
10
Tj = 130°C
Tj = 25°C
1
0.5
1.0
Instantaneous on-state voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
1.5
2.0
2.5
3.0
3.5
1
0.1
Steady state value
RthJC = 0.22 °C/W
(DC operation)
0.01
Per leg
0.001
0.001
0.01
0.1
Square wave pulse duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
1
10
100
10
1
Rectangular gate pulse
(1) PGM = 200 W, tp = 300 µs
a)Recommended load line for
rated di/dt: 20 V, 20ohms
tr = 0.5 µs, tp >= 6 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
b)Recommended load line for
<= 30%rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(3)
(4)
(2)
(1)
VGD
IGD
0.01
Frequency Limited by PG(AV)
10 100 1000
V
S
K
.
105.. Series
0.1
0.001
0.1
1
Instantaneous gate current (A)
Fig. 12 - Gate Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94628
Revision: 17-May-10
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VSK
T
105
/
16
1
2
3
4
1
2
3
4
-
-
-
-
Module type
Circuit configuration (see end of datasheet)
Current code (105 A)
Voltage code (see Voltage Ratings table)
Note
To order the optional hardware go to www.vishay.com/doc?95172
•
CIRCUIT CONFIGURATION
VSKT
VSKH
VSKL
VSKN
(1)
~
(1)
(1)
(1)
~
~
-
1
1
1
1
+
+
+
+
2
2
2
2
(2)
(2)
(2)
(2)
3
3
3
3
4 5 7 6
4 5
7 6
4 5
-
-
-
+
(3)
(3)
G1 K1
(4) (5)
(3)
K2 G2
(7) (6)
(3)
G1 K1
(4) (5)
G1 K1 K2 G2
(4) (5) (7) (6)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95368
Document Number: 94628
Revision: 17-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
7
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
Fast-on tab ꢀ.8 x 0.8 (0.110 x 0.03ꢁ
Viti M5 x 0.8
Screws M5 x 0.8
15.5 0.5
(0.6 0.0ꢀ0ꢁ
18 (0.7ꢁ REF.
80 0.3 (3.15 0.01ꢀꢁ
15 0.5 (0.59 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
9ꢀ 0.75 (3.6 0.030ꢁ
Document Number: 95368
Revision: 11-Nov-08
For technical questions, contact: indmodules@vishay.com
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1
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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