VSKH105/08S90P [VISHAY]
Silicon Controlled Rectifier, 235A I(T)RMS, 105000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-240AA, ROHS COMPLIANT, ADD-A-PAK-5;
| 型号： | VSKH105/08S90P |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 235A I(T)RMS, 105000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-240AA, ROHS COMPLIANT, ADD-A-PAK-5 局域网 栅 栅极 |
| 文件： | 总10页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSK.105..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK Generation 5 Power Modules), 105 A
FEATURES
• High voltage
• Industrial standard package
• Thick copper baseplate
• UL E78996 approved
• 3500 VRMS isolating voltage
• Totally lead (Pb)-free
ADD-A-PAK
• Designed and qualified for industrial level
PRODUCT SUMMARY
IT(AV) or IF(AV)
105 A
BENEFITS
• Up to 1600 V
MECHANICAL DESCRIPTION
• Fully compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
• Al203 DBC insulator
The Generation 5 of ADD-A-PAK modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread.
• Heatsink grounded
The Generation 5 of AAP modules is manufactured without
hard mold, eliminating in this way any possible direct stress
on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
105
UNITS
I
T(AV) or IF(AV)
85 °C
IO(RMS)
As AC switch
50 Hz
235
A
1785
ITSM,
IFSM
60 Hz
1870
50 Hz
15.91
I2t
kA2s
60 Hz
14.52
I2√t
VRRM
TStg
TJ
159.1
kA2√s
Range
400 to 1600
- 40 to 150
- 40 to 130
V
°C
Document Number: 94416
Revision: 08-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSK.105..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK Generation 5 Power Modules), 105 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM
V
RSM, MAXIMUM
V
DRM, MAXIMUM REPETITIVE
IRRM,
IDRM
AT 130 °C
mA
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
PEAK OFF-STATE VOLTAGE,
TYPE NUMBER
GATE OPEN CIRCUIT
V
04
06
08
10
12
14
16
400
600
500
700
400
600
800
900
800
VSK.105
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
20
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
180° conduction, half sine wave,
105
T
C = 85 °C
IF(AV)
or
Maximum continuous RMS on-state current,
as AC switch
I(RMS)
I(RMS)
IO(RMS)
235
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
No voltage
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
ITSM
or
IFSM
Maximum peak, one-cycle non-repetitive
on-state or forward current
100 % VRRM
reapplied
TJ = 25 °C, no voltage reapplied
No voltage
reapplied
Initial TJ = TJ maximum
100 % VRRM
reapplied
Maximum I2t for fusing
I2t
kA2s
TJ = 25 °C, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
TJ = TJ maximum
Maximum I2√t for fusing
I2√t (1)
159.1
kA2√s
V
Low level (3)
High level (4)
0.80
0.85
2.37
2.25
(2)
Maximum value or threshold voltage
VT(TO)
TJ = TJ maximum
Low level (3)
Maximum value of on-state
slope resistance
(2)
rt
TJ = TJ maximum
High level (4)
mΩ
V
VTM
VFM
ITM = π x IT(AV)
TJ = 25 °C
Maximum peak on-state or forward voltage
1.64
150
IFM = π x IF(AV)
Maximum non-repetitive rate of rise of
turned on current
TJ = 25 °C, from 0.67 VDRM
,
dI/dt
A/µs
I
TM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
IH
IL
250
400
mA
Maximum latching current
TJ = 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(3)
I2t for time tx = I2√t x √tx
16.7 % x π x IAV < I < π x IAV
I> π x IAV
(2)
2
(4)
Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
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2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94416
Revision: 08-Sep-08
VSK.105..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK Generation 5 Power Modules), 105 A
Vishay High Power Products
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
12
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
W
A
PG(AV)
IGM
3
3
- VGM
10
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
4.0
2.5
1.7
270
150
80
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
VGT
Anode supply = 6 V
resistive load
IGT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
VGD
IGD
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 130 °C, gate open circuit
20
mA
2500 (1 min)
3500 (1 s)
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted
V
Maximum critical rate of rise of off-state voltage dV/dt (1)
Note
TJ = 130 °C, linear to 0.67 VDRM, gate open circuit
500
V/µs
(1)
Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. VSKT105/16S90P
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 130
- 40 to 150
UNITS
Junction operating temperature range
Storage temperature range
TJ
°C
TStg
Maximum internal thermal resistance,
junction to case per module
RthJC
RthCS
DC operation
0.135
0.1
K/W
Nm
Typical thermal resistance,
case to heatsink
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
to heatsink
busbar
5
3
Mounting torque 10 %
110
4
g
Approximate weight
Case style
oz.
JEDEC
TO-240AA
ΔR CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.105
0.04
0.05
0.05
0.08
0.12
0.03
0.05
0.06
0.08
0.12
°C/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94416
Revision: 08-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSK.105..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK Generation 5 Power Modules), 105 A
Vishay High Power Products
200
DC
130
VSK.105.. Series
thJC
180
160
140
120
100
80
R
(DC) = 0.27 K/W
180°
120°
90°
120
110
100
90
60°
30°
Conduction Angle
RM S Lim it
Conduction Period
30°
40
60
60°
60
VSK.105.. Series
Per Junc t ion
90°
40
80
120°
180°
T = 130° C
20
J
0
70
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
0
20
80
100 120
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
130
120
110
100
90
1600
At Any Rated Load Condition And With
VSK.105.. Series
Rated V
Applied Following Surge.
RRM
R
(DC) = 0.27 K/W
1500
1400
1300
1200
1100
1000
900
thJC
Initial T = 130°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Conduction Period
30°
60°
90°
80
VSK.105.. Series
Per Junction
120°
800
DC
180°
70
700
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
160
1800
180°
120°
90°
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
140
120
100
80
Of Conduction May Not Be Maintained.
1600
Initial T = 130°C
J
60°
30°
No Voltage Reapplied
1400
Ra t e d V
Re a p p lie d
RRM
RM S Li m it
1200
1000
800
60
Conduction Angle
40
VSK.105.. Series
Per Junc t ion
VSK.105.. Series
Per Junction
20
T = 130°C
J
0
600
0.01
0
20
40
60
80
100 120
0.1
Pulse Train Duration (s)
1
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94416
Revision: 08-Sep-08
VSK.105..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK Generation 5 Power Modules), 105 A
Vishay High Power Products
350
R
0
=
300
250
200
150
100
50
180°
120°
90°
.
2
0
.
K
1
/
W
K
/
W -
0
.
3
D
K
60°
e
l
/
W
t
a
30°
R
0
.
5
K
/
W
Conduction Angle
VSK.105.. Series
Per Mod ule
J
T = 130° C
0
0
0
0
40
80
120 160 200 2400 20 40 60 80 100 120 140
Total RMSOutput Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
600
500
400
300
200
100
0
R
t
h
S
180°
(Sine)
180°
A
=
0
.
1
K
/
W
-
(Rect)
D
e
l
t
a
R
0.
3
K
/
W
2 x VSK.105.. Series
Sin g le Ph a se Brid g e
Connected
2
K
/
W
T
= 13 0° C
J
40
80
120
160
200 20
40 60 80 100 120 140
To t a l O u t p u t C u rre n t ( A )
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
t
h
S
A
120°
(Rect)
0
.
2
K
/
W
3 x VSK.105.. Series
Th r e e Ph a se Br id g e
Connected
T = 130°C
J
40 80 120 160 200 240 280 20 40 60
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
80 100 120 140
Total Output Current (A)
Document Number: 94416
Revision: 08-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
VSK.105..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK Generation 5 Power Modules), 105 A
Vishay High Power Products
1000
100
T = 25° C
J
T = 130°C
J
10
1
VSK.105.. Series
Pe r Jun c t io n
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
140
700
I
= 200 A
100 A
TM
VSK.105.. Series
T = 125 ° C
I
= 200 A
VSK.105.. Series
J
TM
J
120
100
80
T = 125 °C
600
500
400
300
200
100
100 A
50 A
20 A
10 A
50 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 11 - Recovery Charge Characteristics
Fig. 12 - Recovery Current Characteristics
1
Steady State Value:
R
= 0.27 K/ W
thJC
(DC Operation)
0.1
VSK.105.. Series
Pe r Junc t io n
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 13 - Thermal Impedance ZthJC Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94416
Revision: 08-Sep-08
VSK.105..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK Generation 5 Power Modules), 105 A
Vishay High Power Products
100
Rectangular gate pulse
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
a)Recommended load line for
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
10
1
(a)
(b)
(3)
(4)
(2)
(1)
VGD
IGD
0.01
VSK.105.. Series
Fre q ue nc y Lim it e d b y PG(AV)
10 100 1000
0.1
0.001
0.1
1
InstantaneousGate Current (A)
Fig. 14 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
T
105
/
16 S90
P
1
2
3
4
5
6
1
-
-
-
-
-
Module type
2
3
4
5
Circuit configuration (see end of datasheet)
Current code (1)
Voltage code (see Voltage Ratings table)
dV/dt code: S90 = dV/dt 1000 V/µs
No letter = dV/dt 500 V/µs
6
-
P = Lead (Pb)-free
(1) Available with no auxiliary cathode
(for details see dimensions - link at the end of datasheet)
To specify change: 105 to 106
e.g.: VSKT106/16P etc.
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Document Number: 94416
Revision: 08-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
VSK.105..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK Generation 5 Power Modules), 105 A
Vishay High Power Products
CIRCUIT CONFIGURATION
VSKT
VSKH
VSKL
VSKN
(1)
(1)
(1)
(1)
~
~
~
+
+
+
(2)
(2)
(2)
(2)
(3)
-
-
-
(3)
(3)
G1 K1
(4) (5)
(3)
G1 K1 K2 G2
K2 G2
(7) (6)
G1 K1
(4) (5)
(4) (5) (7) (6)
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95085
Dimensions
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8
For technical questions, contact: ind-modules@vishay.com
Document Number: 94416
Revision: 08-Sep-08
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK SCR
DIMENSIONS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (0.110 x 0.037
With no auxiliary cathode
13.8 (0.547
Viti M5 x 0.8
Screws M5 x 0.8
15.6 0.5
(0.6 0.01ꢀ97
18 (0.97 REF.
80 0.3 (3.15 0.01187
Detail Z
15 0.5 (0.5ꢀ 0.01ꢀ97
20 0.5 (0.9ꢀ 0.01ꢀ97
20 0.5 (0.9ꢀ 0.01ꢀ97
ꢀ2 0.95 (3.6 0.02ꢀ537
Document Number: 95085
Revision: 29-Sep-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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