VS-HFA25TB60HN3 [VISHAY]
DIODE RECTIFIER DIODE, Rectifier Diode;
| 型号： | VS-HFA25TB60HN3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE RECTIFIER DIODE, Rectifier Diode 超快软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总7页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA25TB60HN3
Vishay Semiconductors
www.vishay.com
HEXFRED®
Ultrafast Soft Recovery Diode, 25 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• AEC-Q101 qualified, meets JESD 201 class 2
whisker test
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TO-220AC
BENEFITS
• Reduced RFI and EMI
Base
cathode
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
1
3
DESCRIPTION
Cathode Anode
VS-HFA25TB60... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package
TO-220AC
25 A
IF(AV)
VR
600 V
VF at IF
1.7 V
t
rr typ.
23 ns
TJ max.
150 °C
Single die
Diode variation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
600
V
Maximum continuous forward current
Single pulse forward current
IF
TC = 100 °C
25
225
IFSM
IFRM
A
Maximum repetitive forward current
100
TC = 25 °C
125
Maximum power dissipation
PD
W
TC = 100 °C
50
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
Revision: 28-Mar-12
Document Number: 94412
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60HN3
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
600
-
-
IF = 25 A
IF = 50 A
-
-
-
-
-
-
1.3
1.5
1.3
1.5
600
55
1.7
2.0
V
Maximum forward voltage
VFM
See fig. 1
IF = 25 A, TJ = 125 °C
VR = VR rated
1.7
20
Maximum reverse
leakage current
IRM
See fig. 2
See fig. 3
μA
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
2000
100
Junction capacitance
Series inductance
CT
LS
pF
Measured lead to lead 5 mm from package
body
-
8.0
-
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
23
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
Reverse recovery time
See fig. 5, 6 and 16
trr1
50
75
ns
trr2
TJ = 125 °C
105
4.5
160
10
IRRM1
IRRM2
Qrr1
TJ = 25 °C
Peak recovery current
See fig. 7 and 8
A
IF = 25 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
8.0
15
dIF/dt = 200 A/μs
VR = 200 V
112
420
375
1200
Reverse recovery charge
See fig. 9 and 10
nC
Qrr2
Peak rate of fall of recovery
current during tb
See fig. 11 and 12
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
-
250
160
-
-
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063” from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
RthCS
-
-
-
-
-
1.0
80
-
Thermal resistance,
junction to ambient
Typical socket mount
K/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-220AC
HFA25TB60H
Revision: 28-Mar-12
Document Number: 94412
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60HN3
Vishay Semiconductors
www.vishay.com
1000
10 000
1000
100
TJ = 150 °C
TJ = 125 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
10
1
TJ = 25 °C
0.1
1
0.01
0.6
1.0
1.4
1.8
2.2
2.6
0
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
94065_01
94065_02
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
1000
TJ = 25 °C
100
10
1
10
100
1000
94065_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
t2
0.1
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal response)
D = 0.01
0.01
0.00001
0.0001
0.001
0.01
0.1
1
94065_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 28-Mar-12
Document Number: 94412
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60HN3
Vishay Semiconductors
www.vishay.com
140
120
1400
1200
1000
800
600
400
200
0
VR = 200 V
TJ = 125 °C
TJ = 25 °C
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 50 A
IF = 25 A
IF = 10 A
100
IF = 50 A
IF = 25 A
IF = 10 A
80
60
40
20
100
1000
100
1000
94065_05
94065_07
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
30
10 000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
VR = 200 V
TJ = 125 °C
TJ = 25 °C
25
IF = 20 A
IF = 25 A
IF = 10 A
20
IF = 50 A
IF = 25 A
IF = 10 A
15
1000
10
5
0
100
100
1000
100
1000
94065_06
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
94065_08
dIF/dt (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 28-Mar-12
Document Number: 94412
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60HN3
Vishay Semiconductors
www.vishay.com
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 28-Mar-12
Document Number: 94412
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60HN3
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
N3
VS- HF
A
25
TB
60
H
8
1
2
3
4
5
6
7
1
2
3
4
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Electron irradiated
Current rating (25 = 25 A)
Package:
4
5
4
6
7
TB = TO-220AC
-
-
-
Voltage rating (60 = 600 V)
H = AEC-Q101 qualified
Environmental digit:
4
8
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-HFA25TB60HN3
50
1000
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95221
Part marking information
SPICE model
www.vishay.com/doc?95068
www.vishay.com/doc?95471
Revision: 28-Mar-12
Document Number: 94412
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
Document Number: 91000
1
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