VS-HFA30PA60C-N3 [VISHAY]
HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A; HEXFRED®超快软恢复二极管， 2× 15 A
| 型号： | VS-HFA30PA60C-N3 |
| 厂家： | 
VISHAY |
| 描述： | HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A |
| 文件： | 总8页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA30PA60CPbF, VS-HFA30PA60C-N3
www.vishay.com
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified according to
JEDEC-JESD47
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TO-247AC
Base
BENEFITS
• Reduced RFI and EMI
common
cathode
2
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
1
3
VS-HFA30PA60C... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30PA60C... is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30PA60C... is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
Anode
1
Anode
2
2
Common
cathode
PRODUCT SUMMARY
Package
TO-247AC
2 x 15 A
600 V
IF(AV)
VR
VF at IF
1.7 V
trr typ.
19 ns
TJ max.
Diode variation
150 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
600
V
per leg
per device
15
Maximum continuous forward current
IF
TC = 100 °C
30
A
Single pulse forward current
IFSM
IFRM
150
Maximum repetitive forward current
60
TC = 25 °C
74
29
Maximum power dissipation
PD
W
TC = 100 °C
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
Revision: 02-Jul-12
Document Number: 94068
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA30PA60CPbF, VS-HFA30PA60C-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
600
-
-
IF = 15 A
IF = 30 A
-
-
-
-
-
-
-
1.3
1.5
1.2
1.0
400
25
1.7
2.0
1.6
10
V
Maximum forward voltage
VFM
See fig. 1
IF = 15 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
See fig. 2
See fig. 3
µA
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
1000
50
Junction capacitance
Series inductance
CT
LS
pF
Measured lead to lead 5 mm from package body
12
-
nH
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
trr
-
-
-
-
-
-
-
19
-
Reverse recovery time
See fig. 5, 10
trr1
42
60
ns
trr2
TJ = 125 °C
70
120
6.0
10
IRRM1
IRRM2
Qrr1
TJ = 25 °C
4.0
6.5
80
Peak recovery current
See fig. 6
A
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/μs
TJ = 25 °C
180
600
Reverse recovery charge
See fig. 7
V
R = 200 V
nC
Qrr2
TJ = 125 °C
220
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
-
250
160
-
-
Peak rate of fall of
recovery current during tb
See fig. 8
A/µs
THERMAL-MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063” from case (1.6 mm) for 10 s
-
-
300
°C
Junction to case,
single leg conduction
-
-
-
-
-
1.7
0.85
40
RthJC
Junction to case,
both legs conducting
-
-
K/W
Thermal resistance,
junction to ambient
RthJA
RthCS
Typical socket mount
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and greased
0.25
-
-
-
6.0
-
-
g
Weight
0.21
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-247AC (JEDEC)
HFA30PA60C
Revision: 02-Jul-12
Document Number: 94068
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA30PA60CPbF, VS-HFA30PA60C-N3
www.vishay.com
Vishay Semiconductors
100
10 000
TJ = 150 °C
1000
100
TJ = 125 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
10
1
0.1
TJ = 25 °C
200
1
0.01
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
100
300
400
500
600
VFM - Forward Voltage Drop (V)
94068_01
94068_02
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
100
TJ = 25 °C
10
0
100
200
300
400
500
600
94068_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t2
0.1
Notes:
Single pulse
(thermal response)
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
94068_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 02-Jul-12
Document Number: 94068
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA30PA60CPbF, VS-HFA30PA60C-N3
www.vishay.com
Vishay Semiconductors
100
80
60
40
20
800
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 30 A
IF = 15 A
IF = 5.0 A
600
400
200
IF = 30 A
IF = 15 A
IF = 5.0 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
0
100
1000
1000
94068_07
94068_05
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
(Per Leg)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
25
10 000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
20
15
10
5
IF = 30 A
IF = 15 A
IF = 5.0 A
IF = 30 A
IF = 15 A
IF = 5.0 A
1000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
100
1000
100
1000
94068_06
dIF/dt (A/µs)
94068_08
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
Revision: 02-Jul-12
Document Number: 94068
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA30PA60CPbF, VS-HFA30PA60C-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 02-Jul-12
Document Number: 94068
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA30PA60CPbF, VS-HFA30PA60C-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- HF
A
30
PA
60
C
PbF
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Electron irradiated
Current rating (30 = 30 A)
-
-
-
PA = TO-247AC
Voltage rating: (60 = 600 V)
Circuit configuration
C = Common cathode
Environmental digit:
-
8
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-HFA30PA60CPbF
VS-HFA30PA60C-N3
25
25
500
500
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95223
www.vishay.com/doc?95226
TO-247ACPbF
TO-247AC-N3
Part marking information
SPICE model
www.vishay.com/doc?95007
www.vishay.com/doc?95182
Revision: 02-Jul-12
Document Number: 94068
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
FP1
B
A2
A
N
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
0.020
0.602
0.540
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
FK
L
14.20
3.71
16.10
4.29
0.634
0.169
L1
N
0.146
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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