VS-HFA25TB60STRRPBF [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 25A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3;
| 型号： | VS-HFA25TB60STRRPBF |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 25A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3 功效 二极管 |
| 文件： | 总8页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA25TB60SPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 25 A
FEATURES
• Ultrafast recovery
Base
cathode
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
2
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
D2PAK
1
N/C
3
Anode
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
PRODUCT SUMMARY
VS-HFA25TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
VR
VF at 25 A at 25 °C
IF(AV)
600 V
1.7 V
25 A
t
rr (typical)
TJ (maximum)
rr (typical)
23 ns
150 °C
112 nC
250 A/μs
10 A
Q
dI(rec)M/dt (typical)
IRRM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
600
V
Maximum continuous forward current
Single pulse forward current
IF
TC = 100 °C
25
225
IFSM
IFRM
A
Maximum repetitive forward current
100
TC = 25 °C
125
Maximum power dissipation
PD
W
T
C = 100 °C
50
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
Document Number: 94066
Revision: 22-Feb-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
1
VS-HFA25TB60SPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 25 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
600
-
-
IF = 25 A
IF = 50 A
-
-
-
-
-
-
-
1.3
1.5
1.3
1.5
600
55
1.7
2.0
1.7
20
V
Maximum forward voltage
VFM
See fig. 1
IF = 25 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
See fig. 2
See fig. 3
μA
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
2000
100
-
Junction capacitance
Series inductance
CT
LS
pF
nH
Measured lead to lead 5 mm from package body
8.0
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
23
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
Reverse recovery time
See fig. 5
trr1
50
75
ns
trr2
TJ = 125 °C
105
4.5
160
10
IRRM1
IRRM2
Qrr1
TJ = 25 °C
Peak recovery current
See fig. 6
A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
8.0
15
IF = 25 A
dIF/dt = 200 A/μs
112
420
375
1200
Reverse recovery charge
See fig. 7
nC
VR = 200 V
Qrr2
Peak rate of fall recovery
current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
-
250
160
-
-
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
-
-
-
-
1.0
80
K/W
Thermal resistance,
junction to ambient
Typical socket mount
Case style D2PAK
-
-
2.0
-
-
g
Weight
0.07
oz.
Marking device
HFA25TB60S
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2
For technical questions, contact: diodestech@vishay.com
Document Number: 94066
Revision: 22-Feb-10
VS-HFA25TB60SPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 25 A
100
10 000
1000
TJ = 150 °C
TJ = 125 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
100
10
10
1
TJ = 25 °C
0.1
1
0.01
0.6
1.0
1.4
1.8
2.2
2.6
0
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
94066_01
94066_02
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
1000
TJ = 25 °C
100
10
1
10
100
1000
94066_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t2
0.1
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal response)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
94066_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94066
Revision: 22-Feb-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
3
VS-HFA25TB60SPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 25 A
140
1400
VR = 200 V
VR = 200 V
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
1200
120
100
80
1000
IF = 50 A
IF = 25 A
IF = 10 A
800
600
400
200
0
IF = 50 A
IF = 25 A
IF = 10 A
60
40
20
100
1000
100
1000
94066_05
dIF/dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
dIF/dt (A/μs)
94066_07
Fig. 7 - Typical Stored Charge vs. dIF/dt
30
10 000
1000
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
VR = 200 V
TJ = 125 °C
TJ = 25 °C
25
20
15
10
5
IF = 50 A
IF = 25 A
IF = 10 A
IF = 50 A
IF = 25 A
IF = 10 A
0
100
1000
100
1000
94066_06
dIF/dt (A/μs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
dIF/dt (A/μs)
94066_08
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
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4
For technical questions, contact: diodestech@vishay.com
Document Number: 94066
Revision: 22-Feb-10
VS-HFA25TB60SPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 25 A
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94066
Revision: 22-Feb-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
5
VS-HFA25TB60SPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 25 A
ORDERING INFORMATION TABLE
Device code
VS- HF
A
25
TB
60
S
TRL PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
HPP product suffix
HEXFRED® family
Process designator: A = Electron irradiated
Current rating (25 = 25 A)
Package outline (TB = TO-220, 2 leads)
Voltage rating (60 = 600 V)
S = D2PAK
None = Tube (50 pieces)
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
PbF = Lead (Pb)-free
-
9
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Part marking information
Packaging information
www.vishay.com
6
For technical questions, contact: diodestech@vishay.com
Document Number: 94066
Revision: 22-Feb-10
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
Lead assignments
L3
A1
Lead tip
(b, b2)
L
Diodes
L4
Section B - B and C - C
Scale: None
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
SYMBOL
INCHES
MILLIMETERS
INCHES
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
Document Number: 91000
1
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