VS-8ETH06PBF [VISHAY]
Hyperfast Rectifier, 8 A FRED Pt®; 超快整流器, 8的FRED Pt®型号: | VS-8ETH06PBF |
厂家: | VISHAY |
描述: | Hyperfast Rectifier, 8 A FRED Pt® |
文件: | 总9页 (文件大小:194K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
TO-220AC
TO-220 FULL-PAK
• Fully isolated package (VINS = 2500 VRMS
)
Base
cathode
2
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
1
1
3
3
Cathode
Cathode
Anode
Anode
DESCRIPTION/APPLICATIONS
VS-8ETH06PbF
VS-8ETH06-N3
VS-8ETH06FPPbF
VS-8ETH06FP-N3
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
PRODUCT SUMMARY
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
Package
TO-220AC, TO-220FP
IF(AV)
8 A
600 V
VR
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
VF at IF
2.4 V
trr typ.
18 ns
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
TJ max.
Diode variation
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Repetitive peak reverse voltage
VRRM
600
V
TC = 144 °C
TC = 108 °C
TJ = 25 °C
Average rectified forward current
IF(AV)
8
FULL-PAK
90
100
A
Non-repetitive peak surge current
Repetitive peak forward current
IFSM
FULL-PAK
IFM
16
Operating junction and storage temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 8 A
600
-
-
V
-
-
-
-
-
-
2.0
1.3
0.3
55
2.4
1.8
50
500
-
Forward voltage
VF
IR
IF = 8 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
Junction capacitance
Series inductance
CT
LS
17
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Revision: 02-Jan-12
Document Number: 94026
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
-
-
-
18
22
25
-
20
Reverse recovery time
trr
ns
25
TJ = 125 °C
40
-
IF = 8 A
TJ = 25 °C
2.4
4.8
25
-
Peak recovery current
IRRM
dIF/dt = 200 A/μs
TJ = 125 °C
A
-
V
R = 390 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
120
33
-
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
-
ns
A
IF = 8 A
IRRM
Qrr
TJ = 125 °C
dIF/dt = 600 A/μs
12
-
V
R = 390 V
220
-
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 65
-
175
°C
-
-
1.4
3.4
2
Thermal resistance,
junction to case
RthJC
(FULL-PAK)
4.3
Thermal resistance,
junction to ambient per leg
°C/W
RthJA
RthCS
Typical socket mount
-
-
-
70
-
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth
and greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-220AC
8ETH06
8ETH06FP
Case style TO-220 FULL-PAK
100
10
1
1000
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
0.1
0.01
TJ = 25 °C
0.1
0.001
0
100
200
300
400
500
600
0
1
2
3
4
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Jan-12
Document Number: 94026
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3
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Vishay Semiconductors
1000
100
TJ = 25 °C
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
0.1
t2
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
.
.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
0.1
t2
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
.
.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
Revision: 02-Jan-12
Document Number: 94026
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3
www.vishay.com
Vishay Semiconductors
180
170
160
150
140
130
120
20
18
RMS limit
16
14
12
10
8
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Square wave (D = 0.50)
Rated VR applied
6
4
DC
4
2
See note (1)
0
0
2
4
6
8
10
12
0
2
6
8
10
12
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 8 - Forward Power Loss Characteristics
180
160
140
60
50
40
30
20
10
VR = 390 V
TJ = 125 °C
TJ = 25 °C
DC
120
Square wave (D = 0.50)
Rated VR applied
100
IF = 16 A
IF = 8 A
See note (1)
80
0
2
4
6
8
10
12
14
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt
400
VR = 390 V
TJ = 125 °C
TJ = 25 °C
350
300
250
200
150
100
50
IF = 16 A
IF = 8 A
0
100
1000
dIF/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 02-Jan-12
Document Number: 94026
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 02-Jan-12
Document Number: 94026
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
8
E
T
H
06
FP PbF
1
2
3
4
5
6
7
8
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (8 = 8 A)
E = Single diode
2
3
4
5
6
7
T = TO-220, D2PAK
H = Hyperfast recovery
Voltage rating (06 = 600 V)
None = TO-220AC
FP = TO-220 FULL-PAK
Environmental digit:
8
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-8ETH06PbF
VS-8ETH06-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
50
50
50
50
1000
1000
1000
1000
VS-8ETH06FPPbF
VS-8ETH06FP-N3
LINKS TO RELATED DOCUMENTS
TO-220AC
www.vishay.com/doc?95221
Dimensions
TO-220FP
www.vishay.com/doc?95005
www.vishay.com/doc?95224
www.vishay.com/doc?95068
www.vishay.com/doc?95009
www.vishay.com/doc?95440
TO-220ACPbF
TO-220AC-N3
Part marking information
TO-220FPPbF
TO-220FP-N3
Revision: 02-Jan-12
Document Number: 94026
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters
1ꢀ06
1ꢀ04
304
301
Hole Ø
208
206
307
302
7031
6091
160ꢀ
1508
1604
1504
1ꢀ°
303
301
13056
130ꢀ5
ꢀ09
ꢀ07
ꢀ061
ꢀ038
1015
10ꢀ5
2054 TYP0
TYP0
104
103
2054 TYP0
2085
2065
R ꢀ07
R ꢀ05
(2 places)
Lead assignments
Diodes
408
406
1 + 2 - Cathode
3 - Anode
5° ꢀ05°
5° ꢀ05°
Conforms to JEDEC outline TO-220 FULL-PAK
Revision: 20-Jul-11
Document Number: 95005
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B
Seating
1
2
3
plane
(6)
A
D
D
E
A
Ø P
0.014 M B AM
A
L1
E
(7)
E2
C
C
A1
Thermal pad
Q
(6)
H1
H1
(7)
D2 (6)
2 x b2
2 x b
(6)
Detail B
D
Detail B
θ
D1
1
3
2
Lead tip
L3
L4
C
E1 (6)
Lead assignments
Diodes
L
1 + 2 - Cathode
3 - Anode
c
A
Conforms to JEDEC outline TO-220AC
View A - A
e1
A2
0.015 M B AM
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN.
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
10.11
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
10.51
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
0.414
MIN.
6.86
-
MAX.
8.89
0.76
2.67
5.28
6.48
14.02
3.82
2.13
1.27
3.73
3.00
MAX.
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.084
0.050
0.147
0.118
A
A1
A2
b
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
0.398
E1
E2
e
0.270
-
6
7
2.41
4.88
6.09
13.52
3.32
1.78
0.76
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.070
0.030
0.139
0.102
e1
H1
L
b1
b2
b3
c
4
4
6, 7
2
L1
L3
L4
Ø P
Q
c1
D
4
3
2
D1
D2
E
6
90° to 93°
90° to 93°
3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Dimension b1, b3 and c1 apply to base metal only
Controlling dimension: inches
Thermal pad contour optional within dimensions E, H1, D2 and E1
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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