VS-8ETL06FPPBF [VISHAY]
DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220, ROHS COMPLIANT, PLASTIC, FULL PACK-2, Rectifier Diode;型号: | VS-8ETL06FPPBF |
厂家: | VISHAY |
描述: | DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220, ROHS COMPLIANT, PLASTIC, FULL PACK-2, Rectifier Diode 软恢复二极管 超快速软恢复二极管 局域网 |
文件: | 总9页 (文件大小:214K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Vishay Semiconductors
Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC,
8 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
2
2
• 175 °C operating junction temperature
3
• Low leakage current
3
1
1
• Fully isolated package (VINS = 2500 VRMS
)
TO-220 FULL-PAK
TO-220AC
• UL E78996 approved
Base
Base
cathode
2
cathode
• Designed and qualified according to
JEDEC®-JESD 47
Available
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
1
3
3
DESCRIPTION
Cathode
Cathode
Anode
Anode
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
VS-8ETL06PbF
VS-8ETL06-N3
VS-8ETL06FPPbF
VS-8ETL06FP-N3
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
PRODUCT SUMMARY
Package
TO-220AC, TO-220FP
IF(AV)
8 A
600 V
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
VR
VF at IF
0.81 V
60 ns
t
rr typ.
APPLICATIONS
TJ max.
175 °C
Single die
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
Diode variation
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Repetitive peak reverse voltage
VRRM
600
V
TC = 160 °C
Average rectified forward current
FULL-PAK
IF(AV)
8
T
C = 142 °C
A
Non-repetitive peak surge current
Repetitive peak forward current
IFSM
IFM
TJ = 25 °C
175
16
Operating junction and storage temperatures
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 8 A
600
-
-
V
-
-
-
-
-
-
0.96
0.81
0.05
20
1.05
0.86
5
Forward voltage
VF
IR
IF = 8 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
100
-
Junction capacitance
Series inductance
CT
LS
17
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Revision: 15-Nov-16
Document Number: 94028
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
60
100
150
170
250
15
250
Reverse recovery time
trr
ns
-
-
-
-
-
-
TJ = 125 °C
IF = 8 A
TJ = 25 °C
Peak recovery current
IRRM
dIF/dt = 200 A/μs
R = 390 V
A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
20
V
1.3
2.6
Reverse recovery charge
Qrr
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-65
-
175
°C
-
-
1.4
3.4
2
Thermal resistance,
junction to case
RthJC
(FULL-PAK)
4.3
Thermal resistance,
junction to ambient per leg
°C/W
RthJA
RthCS
Typical socket mount
-
-
-
70
-
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth
and greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-220AC
8ETL06
8ETL06FP
Case style TO-220 FULL-PAK
Revision: 15-Nov-16
Document Number: 94028
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Vishay Semiconductors
100
10
1
100
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
0.1
0.01
TJ = 50 °C
TJ = 25 °C
0.1
0.4
0.001
0.8
1.2
1.6
2.0
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
TJ = 25 °C
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
t2
Notes:
1. Duty factor D = t1/t2
Single pulse
(thermal resistance)
.
2. Peak TJ = PDM x ZthJC + TC
.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 15-Nov-16
Document Number: 94028
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Vishay Semiconductors
10
1
0.1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
.
.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
180
175
170
165
160
155
150
12
10
8
RMS limit
D = 0.01
6
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
4
Square wave (D = 0.50)
Rated VR applied
2
DC
See note (1)
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 8 - Forward Power Loss Characteristics
180
450
400
350
300
250
200
150
100
50
VR = 390 V
TJ = 125 °C
TJ = 25 °C
160
140
120
100
80
DC
Square wave (D = 0.50)
Rated VR applied
IF = 16 A
IF = 8 A
See note (1)
0
0
2
4
6
8
10
12
14
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 15-Nov-16
Document Number: 94028
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Vishay Semiconductors
5000
IF = 16 A
4500
IF = 8 A
4000
3500
3000
2500
2000
1500
VR = 390 V
1000
500
TJ = 125 °C
TJ = 25 °C
100
1000
dIF/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 15-Nov-16
Document Number: 94028
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
8
E
T
L
06
FP PbF
1
2
3
4
5
6
7
8
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (8 = 8 A)
E = single diode
2
3
4
5
6
7
T = TO-220, D2PAK
L = ultralow VF hyperfast recovery
Voltage rating (06 = 600 V)
None = TO-220AC
FP = TO-220 FULL-PAK
Environmental digit:
8
-
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
VS-8ETL06PbF
50
50
50
50
1000
1000
1000
1000
VS-8ETL06-N3
VS-8ETL06FPPbF
VS-8ETL06FP-N3
LINKS TO RELATED DOCUMENTS
TO-220AC
www.vishay.com/doc?95221
Dimensions
TO-220FP
www.vishay.com/doc?95005
www.vishay.com/doc?95224
www.vishay.com/doc?95068
www.vishay.com/doc?95009
www.vishay.com/doc?95440
www.vishay.com/doc?96053
www.vishay.com/doc?96054
TO-220ACPbF
TO-220AC-N3
TO-220FPPbF
TO-220FP-N3
TO-220AC
Part marking information
SPICE model
TO-220FP
Revision: 15-Nov-16
Document Number: 94028
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters
1ꢀ06
1ꢀ04
304
301
Hole Ø
208
206
307
302
7031
6091
160ꢀ
1508
1604
1504
1ꢀ°
303
301
13056
130ꢀ5
ꢀ09
ꢀ07
ꢀ061
ꢀ038
1015
10ꢀ5
2054 TYP0
TYP0
104
103
2054 TYP0
2085
2065
R ꢀ07
R ꢀ05
(2 places)
Lead assignments
Diodes
408
406
1 + 2 - Cathode
3 - Anode
5° ꢀ05°
5° ꢀ05°
Conforms to JEDEC outline TO-220 FULL-PAK
Revision: 20-Jul-11
Document Number: 95005
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B
Seating
1
2
3
plane
(6)
A
D
D
E
A
Ø P
0.014 M B AM
A
L1
E
(7)
E2
C
C
A1
Thermal pad
Q
(6)
H1
H1
(7)
D2 (6)
2 x b2
2 x b
(6)
Detail B
D
Detail B
θ
D1
1
3
2
Lead tip
L3
L4
C
E1 (6)
Lead assignments
Diodes
L
1 + 2 - Cathode
3 - Anode
c
A
Conforms to JEDEC outline TO-220AC
View A - A
e1
A2
0.015 M B AM
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN.
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
10.11
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
10.51
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
0.414
MIN.
6.86
-
MAX.
8.89
0.76
2.67
5.28
6.48
14.02
3.82
2.13
1.27
3.73
3.00
MAX.
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.084
0.050
0.147
0.118
A
A1
A2
b
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
0.398
E1
E2
e
0.270
-
6
7
2.41
4.88
6.09
13.52
3.32
1.78
0.76
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.070
0.030
0.139
0.102
e1
H1
L
b1
b2
b3
c
4
4
6, 7
2
L1
L3
L4
Ø P
Q
c1
D
4
3
2
D1
D2
E
6
90° to 93°
90° to 93°
3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Dimension b1, b3 and c1 apply to base metal only
Controlling dimension: inches
Thermal pad contour optional within dimensions E, H1, D2 and E1
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
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1
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Disclaimer
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
Document Number: 91000
1
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