VS-8ETL06-1TRRPBF [VISHAY]

Rectifier Diode,;
VS-8ETL06-1TRRPBF
型号: VS-8ETL06-1TRRPBF
厂家: VISHAY    VISHAY
描述:

Rectifier Diode,

二极管
文件: 总9页 (文件大小:171K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VS-8ETL06SPbF, VS-8ETL06-1PbF  
Vishay High Power Products  
Ultralow VF Hyperfast Rectifier for  
Discontinuous Mode PFC, 8 A FRED Pt®  
VS-8ETL06-1PbF  
FEATURES  
VS-8ETL06SPbF  
• Benchmark ultralow forward voltage drop  
• Hyperfast recovery time  
• Low leakage current  
• 175 °C operating junction temperature  
Base  
cathode  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
2
2
• Halogen-free according to IEC 61249-2-21  
definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
3
1
3
1
N/C  
Anode  
N/C  
Anode  
D2PAK  
DESCRIPTION  
TO-262  
State of the art, ultralow VF, soft-switching hyperfast  
rectifiers optimized for Discontinuous (Critical) Mode (DCM)  
Power Factor Correction (PFC).  
The minimized conduction loss, optimized stored charge  
and low recovery current minimize the switching losses and  
reduce over dissipation in the switching element and  
snubbers.  
The device is also intended for use as a freewheeling diode  
in power supplies and other power switching applications.  
PRODUCT SUMMARY  
VF (typical)  
0.96 V  
IF(AV)  
8 A  
VR  
600 V  
APPLICATIONS  
AC/DC SMPS 70 W to 400 W  
e.g. laptop and printer AC adaptors, desktop PC, TV and  
monitor, games units and DVD ac-to-dc power supplies.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
600  
V
TC = 160 °C  
TJ = 25 °C  
8
175  
IFSM  
A
IFM  
16  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
0.96  
0.81  
0.05  
20  
1.05  
0.86  
5
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
100  
-
Junction capacitance  
Series inductance  
CT  
LS  
17  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Document Number: 94029  
Revision: 11-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1
VS-8ETL06SPbF, VS-8ETL06-1PbF  
Ultralow VF Hyperfast Rectifier for  
Discontinuous Mode PFC, 8 A FRED Pt®  
Vishay High Power Products  
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V  
IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
-
-
-
-
-
60  
100  
150  
170  
250  
15  
250  
Reverse recovery time  
trr  
ns  
-
-
-
-
-
-
TJ = 125 °C  
IF = 8 A  
TJ = 25 °C  
Peak recovery current  
IRRM  
dIF/dt = 200 A/μs  
TJ = 125 °C  
A
20  
VR = 390 V  
TJ = 25 °C  
1.3  
2.6  
Reverse recovery charge  
Qrr  
μC  
TJ = 125 °C  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and storage  
temperature range  
TJ, TStg  
- 65  
-
175  
°C  
Thermal resistance,  
junction to case per leg  
RthJC  
RthJA  
RthCS  
-
-
-
1.4  
-
2
70  
-
Thermal resistance,  
junction to ambient per leg  
Typical socket mount  
°C/W  
Thermal resistance,  
case to heatsink  
Mounting surface, flat, smooth and  
greased  
0.5  
-
-
2.0  
-
-
g
Weight  
0.07  
oz.  
6.0  
(5.0)  
12  
(10)  
kgf · cm  
(lbf · in)  
Mounting torque  
Marking device  
-
Case style D2PAK  
Case style TO-262  
8ETL06S  
8ETL06-1  
www.vishay.com  
2
For technical questions, contact: diodestech@vishay.com  
Document Number: 94029  
Revision: 11-Mar-10  
VS-8ETL06SPbF, VS-8ETL06-1PbF  
Ultralow VF Hyperfast Rectifier for  
Discontinuous Mode PFC, 8 A FRED Pt®  
Vishay High Power Products  
100  
10  
100  
10  
TJ = 175 °C  
TJ = 150 °C  
TJ = 125 °C  
TJ = 100 °C  
1
0.1  
TJ = 175 °C  
TJ = 150 °C  
TJ = 25 °C  
TJ = 75 °C  
TJ = 50 °C  
TJ = 25 °C  
1
0.01  
0.1  
0.4  
0.001  
100  
200  
300  
400  
500  
600  
0.8  
1.2  
1.6  
2.0  
VR - Reverse Voltage (V)  
VF - Forward Voltage Drop (V)  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
Fig. 2 - Typical Values of Reverse Current vs.  
Reverse Voltage  
100  
TJ = 25 °C  
10  
0
100  
200  
300  
400  
500  
600  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
10  
1
PDM  
t1  
D = 0.50  
D = 0.20  
D = 0.10  
t2  
0.1  
0.01  
D = 0.05  
D = 0.02  
D = 0.01  
Notes:  
Single pulse  
(thermal resistance)  
1. Duty factor D = t1/t2  
2. Peak TJ = PDM x ZthJC + TC  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
For technical questions, contact: diodestech@vishay.com  
Document Number: 94029  
Revision: 11-Mar-10  
www.vishay.com  
3
VS-8ETL06SPbF, VS-8ETL06-1PbF  
Ultralow VF Hyperfast Rectifier for  
Discontinuous Mode PFC, 8 A FRED Pt®  
Vishay High Power Products  
180  
175  
170  
450  
VR = 390 V  
TJ = 125 °C  
TJ = 25 °C  
400  
350  
300  
250  
200  
150  
100  
165  
DC  
160  
155  
150  
Square wave (D = 0.50)  
Rated VR applied  
IF = 16 A  
50  
See note (1)  
IF = 8 A  
0
0
2
4
6
8
10  
12  
14  
100  
1000  
IF(AV) - Average Forward Current (A)  
dIF/dt (A/µs)  
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
12  
5000  
RMS limit  
IF = 16 A  
IF 8 A  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
=
10  
8
D = 0.01  
6
D = 0.02  
D = 0.05  
D = 0.10  
D = 0.20  
D = 0.50  
4
VR = 390 V  
TJ = 125 °C  
TJ = 25 °C  
2
DC  
4
0
0
2
6
8
10  
12  
100  
1000  
dIF/dt (A/µs)  
IF(AV) - Average Forward Current (A)  
Fig. 6 - Forward Power Loss Characteristics  
Fig. 8 - Typical Stored Charge vs. dIF/dt  
Note  
(1)  
Formula used: TC = TJ - (Pd + PdREV) x RthJC  
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR  
www.vishay.com  
4
For technical questions, contact: diodestech@vishay.com  
Document Number: 94029  
Revision: 11-Mar-10  
VS-8ETL06SPbF, VS-8ETL06-1PbF  
Ultralow VF Hyperfast Rectifier for  
Discontinuous Mode PFC, 8 A FRED Pt®  
Vishay High Power Products  
VR = 200 V  
0.01 Ω  
L = 70 μH  
D.U.T.  
D
dIF/dt  
adjust  
IRFP250  
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit  
(3)  
trr  
IF  
ta  
tb  
0
(4)  
Qrr  
(2)  
IRRM  
0.5 IRRM  
(5)  
dI(rec)M/dt  
0.75 IRRM  
dIF/dt  
(1)  
(4) Qrr - area under curve defined by trr  
(1) dIF/dt - rate of change of current  
and IRRM  
through zero crossing  
trr x IRRM  
(2) IRRM - peak reverse recovery current  
Qrr  
=
2
(3) trr - reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current.  
(5) dI(rec)M/dt - peak rate of change of  
current during tb portion of trr  
Fig. 10 - Reverse Recovery Waveform and Definitions  
Document Number: 94029  
Revision: 11-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
5
VS-8ETL06SPbF, VS-8ETL06-1PbF  
Ultralow VF Hyperfast Rectifier for  
Discontinuous Mode PFC, 8 A FRED Pt®  
Vishay High Power Products  
ORDERING INFORMATION TABLE  
Device code  
VS-  
8
E
T
L
06  
S
TRL PbF  
1
2
3
4
5
6
7
8
9
1
-
-
-
-
-
-
HPP product suffix  
Current rating (8 A)  
E = Single diode  
2
3
4
5
6
7
T = TO-220, D2PAK  
L = Ultralow VF hyperfast recovery  
Voltage rating (06 = 600 V)  
S = D2PAK  
-
-1 = TO-262  
-
8
9
None = Tube (50 pieces)  
TRL = Tape and reel (left oriented, for D2PAK package)  
TRR = Tape and reel (right oriented, for D2PAK package)  
PbF = Lead (Pb)-free  
-
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95014  
Part marking information  
Packaging information  
www.vishay.com/doc?95008  
www.vishay.com/doc?95032  
www.vishay.com  
6
For technical questions, contact: diodestech@vishay.com  
Document Number: 94029  
Revision: 11-Mar-10  
Outline Dimensions  
Vishay High Power Products  
D2PAK, TO-262  
DIMENSIONS FOR D2PAK in millimeters and inches  
Conforms to JEDEC outline D2PAK (SMD-220)  
B
A
Pad layout  
A
(2)(3)  
E
A
(E)  
c2  
11.00  
MIN.  
(0.43)  
(3)  
D
L1  
4
2
9.65  
(0.38)  
MIN.  
(D1) (3)  
Detail A  
17.90 (0.70)  
15.00 (0.625)  
H
(2)  
1
3
3.81  
MIN.  
L2  
(0.15)  
B
B
2.32  
MIN.  
(0.08)  
A
B
2.64 (0.103)  
2.41 (0.096)  
(3)  
E1  
2 x b2  
2 x b  
C
c
View A - A  
0.004 M  
Base  
Metal  
0.010 M  
M
B
A
Plating  
(4)  
b1, b3  
2 x  
e
H
Gauge  
plane  
(4)  
c1  
(c)  
B
0° to 8°  
Seating  
plane  
Lead assignments  
L3  
A1  
Lead tip  
(b, b2)  
L
Diodes  
L4  
Detail “A”  
Rotated 90 °CW  
Section B - B and C - C  
1. - Anode (two die)/open (one die)  
2., 4. - Cathode  
3. - Anode  
Scale: None  
Scale: 8:1  
MILLIMETERS  
SYMBOL  
INCHES  
MILLIMETERS  
INCHES  
NOTES  
SYMBOL  
NOTES  
MIN.  
4.06  
0.00  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
MAX.  
4.83  
0.254  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
MIN.  
0.160  
0.000  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
MAX.  
0.190  
0.010  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
MIN.  
6.86  
9.65  
7.90  
MAX.  
8.00  
MIN.  
MAX.  
0.315  
0.420  
0.346  
A
A1  
b
D1  
E
0.270  
0.380  
0.311  
3
2, 3  
3
10.67  
8.80  
E1  
e
b1  
b2  
b3  
c
4
4
4
2
2.54 BSC  
0.100 BSC  
H
14.61  
1.78  
-
15.88  
2.79  
1.65  
1.78  
0.575  
0.070  
-
0.625  
0.110  
0.066  
0.070  
L
L1  
L2  
L3  
L4  
3
c1  
c2  
D
1.27  
0.050  
0.25 BSC  
0.010 BSC  
4.78  
5.28  
0.188  
0.208  
Notes  
(1)  
(7)  
Dimensioning and tolerancing per ASME Y14.5 M-1994  
Dimension D and E do not include mold flash. Mold flash shall not  
exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Outline conforms to JEDEC outline TO-263AB  
(2)  
(3)  
(4)  
(5)  
(6)  
Datum A and B to be determined at datum plane H  
Controlling dimension: inch  
Document Number: 95014  
Revision: 31-Mar-09  
For technical questions concerning discrete products, contact: diodes-tech@vishay.com  
For technical questions concerning module products, contact: ind-modules@vishay.com  
www.vishay.com  
1
Outline Dimensions  
Vishay High Power Products  
D2PAK, TO-262  
DIMENSIONS FOR TO-262 in millimeters and inches  
Modified JEDEC outline TO-262  
(2) (3)  
E
A
(Datum A)  
B
A
c2  
E
A
(3)  
L1  
D
Seating  
plane  
D1(3)  
1
2
3
C
C
L2  
B
B
L (2)  
A
c
(3)  
E1  
3 x b2  
3 x b  
A1  
Section A - A  
2 x e  
Base  
metal  
(4)  
b1, b3  
Plating  
c
M
M
B
0.010  
A
Lead assignments  
c1  
(4)  
Diodes  
1. - Anode (two die)/open (one die)  
2., 4. - Cathode  
3. - Anode  
(b, b2)  
Lead tip  
Section B - B and C - C  
Scale: None  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
MIN.  
4.06  
2.03  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
6.86  
9.65  
7.90  
MAX.  
4.83  
3.02  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
8.00  
10.67  
8.80  
MIN.  
0.160  
0.080  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
0.270  
0.380  
0.311  
MAX.  
0.190  
0.119  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
0.315  
0.420  
0.346  
A
A1  
b
b1  
b2  
b3  
c
4
4
4
c1  
c2  
D
2
3
D1  
E
2, 3  
3
E1  
e
2.54 BSC  
0.100 BSC  
L
13.46  
-
14.10  
1.65  
3.71  
0.530  
-
0.555  
0.065  
0.146  
L1  
L2  
3
3.56  
0.140  
Notes  
(1)  
(6)  
Dimensioning and tolerancing as per ASME Y14.5M-1994  
Dimension D and E do not include mold flash. Mold flash shall not  
exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Outline conform to JEDEC TO-262 except A1 (maximum), b  
(minimum) and D1 (minimum) where dimensions derived the  
actual package outline  
(2)  
(3)  
(4)  
(5)  
Controlling dimension: inches  
www.vishay.com  
2
For technical questions concerning discrete products, contact: diodes-tech@vishay.com  
For technical questions concerning module products, contact: ind-modules@vishay.com  
Document Number: 95014  
Revision: 31-Mar-09  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

相关型号:

VS-8ETL06-M3

DIODE FRED 600V 8A TO220AC
VISHAY

VS-8ETL06-N3

DIODE RECTIFIER DIODE, Rectifier Diode
VISHAY

VS-8ETL06FP-N3

DIODE RECTIFIER DIODE, Rectifier Diode
VISHAY

VS-8ETL06FPPBF

DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220, ROHS COMPLIANT, PLASTIC, FULL PACK-2, Rectifier Diode
VISHAY

VS-8ETL06SPBF

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, D2PAK-3
VISHAY

VS-8ETL06STRRPBF

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, D2PAK-3
VISHAY

VS-8ETU04-1HM3

Rectifier Diode,
VISHAY

VS-8ETU04-1PBF

Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
VISHAY

VS-8ETU04HN3

Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-220AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2
VISHAY

VS-8ETU04PBF

DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

VS-8ETU04STRLHM3

Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY

VS-8ETU04STRLPBF

Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3
VISHAY