UG4A-M3/73 [VISHAY]
DIODE 4 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, PLASTIC PACKAGE-2, Rectifier Diode;型号: | UG4A-M3/73 |
厂家: | VISHAY |
描述: | DIODE 4 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, PLASTIC PACKAGE-2, Rectifier Diode 功效 二极管 |
文件: | 总4页 (文件大小:78K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UG4A-M3, UG4B-M3, UG4C-M3, UG4D-M3
www.vishay.com
Vishay General Semiconductor
Miniature Ultrafast Plastic Rectifiers
FEATURES
• Glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-201AD
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
IF(AV)
4.0 A
VRRM
IFSM
50 V, 100 V, 150 V, 200 V
150 A
MECHANICAL DATA
trr
20 ns
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
VF
0.95 V
Base P/N-M3
commercial grade
- halogen-free, RoHS-compliant, and
TJ max.
Package
Diode variations
150 °C
DO-201AD
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL UG4A
UG4B
100
70
UG4C
150
UG4D
200
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
V
V
V
A
105
140
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
100
150
200
IF(AV)
4.0
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
150
A
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
0.95
5.0
300
20
UNIT
(1)
Maximum instantaneous forward voltage
IF = 4.0 A
VF
V
TA = 25 °C
Maximum DC reverse current
at rated DC blocking voltage
IR
trr
trr
μA
ns
ns
TA = 100 °C
Maximum reverse recovery time
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
TJ = 25 °C
TJ = 100 °C
TJ = 25 °C
TJ = 100 °C
30
IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V,
Irr = 10 % IRM
50
15
IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V,
Typical stored charge
Qrr
CJ
nC
pF
Irr = 10 % IRM
30
Typical junction capacitance
4.0 V, 1 MHz
20
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 19-Feb-16
Document Number: 89431
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UG4A-M3, UG4B-M3, UG4C-M3, UG4D-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG4A
UG4B
UG4C
UG4D
UNIT
(1)
Typical thermal resistance
RJA
25
°C/W
Note
(1)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
UG4D-M3/54
1.138
54
1400
13" diameter paper tape and reel
UG4D-M3/73
1.138
73
1000
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
6.0
5.0
4.0
3.0
2.0
1.0
0
100
10
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
TL Lead Temperature
TJ = 100 °C
Pulse Width = 300 μs
1 % Duty Cycle
TJ = 25 °C
1
TA, Ambient Temperature
0.1
P.C.B. Mounted
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads
0.01
0
25
50
75
100
125
150
175
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curves
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
100
10
1000
TL = 75 °C
8.3 ms Single Half Sine-Wave
100
TJ = 100 °C
10
TJ = 25 °C
1
0.1
1
0.01
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Leakage Characteristics
Revision: 19-Feb-16
Document Number: 89431
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UG4A-M3, UG4B-M3, UG4C-M3, UG4D-M3
www.vishay.com
Vishay General Semiconductor
60
50
40
30
20
10
0
100
IF = 4.0 A
VR = 30 V
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 20 A/μs
dI/dt = 50 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
10
dI/dt = 50 A/μs
dI/dt = 20 A/μs
trr
Qrr
1
0.1
0
25
50
75
100
125
150
175
1
10
100
Junction Temperature (°C)
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
Fig. 5 - Reverse Switching Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Revision: 19-Feb-16
Document Number: 89431
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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