UG4BE3 [VISHAY]
DIODE 4 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, MINIATURE, PLASTIC PACKAGE-2, Rectifier Diode;型号: | UG4BE3 |
厂家: | VISHAY |
描述: | DIODE 4 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, MINIATURE, PLASTIC PACKAGE-2, Rectifier Diode |
文件: | 总4页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UG4A thru UG4D
Vishay General Semiconductor
Miniature Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
DO-201AD
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
4.0 A
50 V to 200 V
150 A
MECHANICAL DATA
20 ns
Case: DO-201AD
VF
0.95 V
Epoxy meets UL 94V-0 flammability rating
Tj max.
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
VRRM
VRMS
VDC
UG4A
50
UG4B
100
70
UG4C
150
UG4D
200
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
A
35
105
140
Maximum DC blocking voltage
Maximum average forward rectified current (see Fig. 1)
50
100
150
200
IF(AV)
4.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number 88763
18-May-06
www.vishay.com
1
UG4A thru UG4D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward voltage (1) at IF = 4.0 A
VF
0.95
V
Maximum DC reverse current at rated DC
blocking voltage
T
A = 25 °C
5.0
300
IR
trr
trr
µA
ns
ns
TA = 100 °C
Maximum reverse recovery time
Typical reverse recovery time
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
at IF = 4.0 A, di/dt = 50 A/µs, TJ = 25 °C
R = 30 V, Irr = 10 % IRM
IF = 4.0 A, di/dt = 50 A/µs,
R = 30 V, Irr = 10 % IRM
at 4.0 V, 1 MHz
20
30
50
V
TJ = 100 °C
TJ = 25 °C
TJ = 100 °C
15
30
Typical stored charge
Qrr
CJ
nC
pF
V
Typical junction capacitance
20
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
UG4A
UG4B
UG4C
UG4D
UNIT
Typical thermal resistance (1)
RθJA
25
°C/W
Note:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
UG4D-E3/54
1.138
54
73
1400
1000
13" Diameter Paper Tape & Reel
Ammo Pack Packaging
UG4D-E3/73
1.138
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
6.0
200
100
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
TL Lead Temperature
TL = 75 °C
8.3 ms Single Half Sine-Wave
5.0
4.0
3.0
2.0
1.0
0
10
TA, Ambient Temperature
P.C.B. Mounted
0.5 x 0.5" (12 x 12 mm)
Copper Pads
1
0
25
50
75
100
125
150
175
1
10
100
Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curves
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88763
18-May-06
UG4A thru UG4D
Vishay General Semiconductor
100
10
60
50
40
30
20
10
0
di/dt = 150 A/µs
IF = 4.0 A
VR = 30 V
TJ = 100 °C
Pulse Width = 300 µs
1 % Duty Cycle
di/dt = 100 A/µs
di/dt = 20 A/µs
di/dt = 50 A/µs
di/dt = 100 A/µs
di/dt = 150 A/µs
TJ = 25 °C
1
di/dt = 50 A/µs
di/dt = 20 A/µs
0.1
trr
Qrr
0.01
0
25
50
75
100
125
150
175
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Instantaneous Forward Voltage (V)
Junction Temperature (°C)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Reverse Switching Charateristics
1000
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
TJ = 100 °C
10
1
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Document Number 88763
18-May-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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