UG4B-E3 [VISHAY]

DIODE 4 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, MINIATURE, PLASTIC PACKAGE-2, Rectifier Diode;


型号：	UG4B-E3
厂家：	VISHAY
描述：	DIODE 4 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, MINIATURE, PLASTIC PACKAGE-2, Rectifier Diode 功效二极管
文件：	总4页 (文件大小：77K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UG4A thru UG4D

Vishay General Semiconductor

Miniature Ultrafast Plastic Rectifier

FEATURES

• Glass passivated chip junction

• Ultrafast reverse recovery time

• Low forward voltage drop

• Low switching losses, high efficiency

• High forward surge capability

• Solder Dip 260 °C, 40 seconds

DO-201AD

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and free-

wheeling application in switching mode converters

and inverters for consumer, computer and

telecommunication.

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

t_rr

4.0 A

50 V to 200 V

150 A

MECHANICAL DATA

20 ns

Case: DO-201AD

V_F

0.95 V

Epoxy meets UL 94V-0 flammability rating

T_jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RMS

V_DC

UG4A

UG4B

100

UG4C

150

UG4D

200

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

105

140

Maximum DC blocking voltage

Maximum average forward rectified current (see Fig. 1)

100

150

200

I_F(AV)

4.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

150

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Document Number 88763

18-May-06

www.vishay.com

UG4A thru UG4D

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Maximum instantaneous forward voltage ⁽¹⁾at I_F= 4.0 A

V_F

0.95

Maximum DC reverse current at rated DC

blocking voltage

_A= 25 °C

5.0

300

I_R

t_rr

µA

T_A= 100 °C

Maximum reverse recovery time

Typical reverse recovery time

at I_F= 0.5 A, I_R= 1.0 A, I_rr= 0.25 A

at I_F= 4.0 A, di/dt = 50 A/µs, T_J= 25 °C

_R= 30 V, I_rr= 10 % I_RM

I_F= 4.0 A, di/dt = 50 A/µs,

_R= 30 V, I_rr= 10 % I_RM

at 4.0 V, 1 MHz

T_J= 100 °C

T_J= 25 °C

T_J= 100 °C

Typical stored charge

Q_rr

C_J

Typical junction capacitance

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

UG4A

UG4B

UG4C

UG4D

UNIT

Typical thermal resistance ⁽¹⁾

R_θJA

°C/W

Note:

(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length

ORDERING INFORMATION

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

UG4D-E3/54

1.138

1400

1000

13" Diameter Paper Tape & Reel

Ammo Pack Packaging

UG4D-E3/73

1.138

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

6.0

200

100

Resistive or Inductive Load

0.375" (9.5 mm) Lead Length

T^LLead Temperature

TL = 75 °C

8.3 ms Single Half Sine-Wave

5.0

4.0

3.0

2.0

1.0

TA, Ambient Temperature

P.C.B. Mounted

0.5 x 0.5" (12 x 12 mm)

Copper Pads

100

125

150

175

100

Temperature (°C)

Number of Cycles at 60 Hz

Figure 1. Forward Current Derating Curves

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88763

18-May-06

UG4A thru UG4D

Vishay General Semiconductor

100

di/dt = 150 A/µs

IF = 4.0 A

V^R= 30 V

TJ = 100 °C

Pulse Width = 300 µs

1 % Duty Cycle

di/dt = 100 A/µs

di/dt = 20 A/µs

di/dt = 50 A/µs

di/dt = 100 A/µs

di/dt = 150 A/µs

TJ = 25 °C

di/dt = 50 A/µs

di/dt = 20 A/µs

0.1

t_rr

Qrr

0.01

100

125

150

175

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Instantaneous Forward Voltage (V)

Junction Temperature (°C)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Reverse Switching Charateristics

1000

100

TJ = 25 °C

f = 1.0 MHz

V^sig= 50 mVp-p

100

TJ = 100 °C

TJ = 25 °C

0.1

0.01

100

0.1

100

Percent of Rated Peak Reverse Voltage (%)

Reverse Voltage (V)

Figure 4. Typical Reverse Leakage Characteristics

Figure 6. Typical Junction Capacitance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-201AD

1.0 (25.4)

MIN.

0.210 (5.3)

0.190 (4.8)

DIA.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

MIN.

0.052 (1.32)

0.048 (1.22)

DIA.

Document Number 88763

18-May-06

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

UG4B-E3 [VISHAY]

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