TSDF02424XR [VISHAY]
Dual - MOSMIC?? two AGC Amplifiers for TV?Tuner Prestage with 5 V Supply Voltage; 双 - MOSMIC ？ 2 AGC放大器电视？调谐器预安排与5 V电源电压
| 型号： | TSDF02424XR |
| 厂家： | 
VISHAY |
| 描述： | Dual - MOSMIC?? two AGC Amplifiers for TV?Tuner Prestage with 5 V Supply Voltage |
| 文件： | 总5页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSDF02424X/TSDF02424XR
Vishay Semiconductors
Dual - MOSMIC®– two AGC Amplifiers for TV–Tuner
Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in
UHF-and VHF- tuner with 5 V supply voltage.
Typical Application
Features
2 (TSDF02424X)
AGC
5 (TSDF02424XR)
D Two AGC amplifiers in a single package
RFC
C
C
D Easy Gate 1 switch-off with PNP switching
+5 V
G2 (common)
AMP1
transistors inside PLL
D
3
C
RF out
G1
G1
D Integrated gate protection diodes
D Low noise figure
1
6
RF in
+5 V
RG1
C
D High gain, medium forward transadmittance
RFC
C
+5 V
(24 mS typ.)
D
4
D Biasing network on chip
AMP2
RF out
RF in
+5 V
D Improved cross modulation at gain reduction
D High AGC-range with less steep slope
D SMD package, reverse pinning possible
S (common)
5 (TSDF02424X)
2 (TSDF02424XR)
RG1
16601
6
5
4
6
5
4
TY
TY
WC5
W5C
CW
CW
1
2
3
1
2
3
16602
16603
TSDF02424X Marking: WC5
TSDF02424XR Marking: W5C
Plastic case (SOT 363)
Plastic case (SOT 363)
1 = Gate 1 (amplifier 1), 2 = Gate 2,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Source, 6 = Gate1 (amplifier 2)
1 = Gate 1 (amplifier 1), 2 = Source,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Gate 2, 6 = Gate1 (amplifier 2)
T = Telefunken
Y = Year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001)
CW = Calendar Week, is variable for number from 01 to 52
Number of Calendar Week is always indicating place of pin 1
Document Number 85088
Rev. 1, 12–Nov–01
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1 (4)
TSDF02424X/TSDF02424XR
Vishay Semiconductors
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
Drain - source voltage
Test Conditions
Symbol
Value
8
Unit
V
V
DS
Drain current
I
25
10
6
1.5
200
mA
mA
V
D
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
±I
G1/G2SM
+V /±V
G1
G2SM
-V
V
G1SM
T
amb
ꢀ 60 °C
P
mW
°C
°C
tot
T
150
Ch
T
stg
–55 to +150
Maximum Thermal Resistance
T
amb
= 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
450
Unit
K/W
3
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
R
thChA
plated with 35µm Cu
Electrical DC Characteristics
T
amb
= 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min. Typ. Max. Unit
Drain - source
I = 10 µA, V
D
= V
= 0
V
12
V
G1S
G2S
(BR)DSS
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain - source
operating current
+I
= 10 mA, V
= V = 0
+V
7
10
10
20
20
18
1.3
1.4
V
G1S
G2S
DS
(BR)G1SS
±I
= 10 mA, V
= V = 0
±V
7
V
G2S
G2S
DS
(BR)G2SS
+V
= 5 V, V
= V = 0
+I
G1SS
nA
nA
mA
V
G1S
G2S
DS
±V
= 5 V, V
= V = 0
±I
G2S
G1S
DS
G2SS
DSO
V
V
V
= V
= 5 V, V
= 4 V, R = 56 kW
I
8
13
DS
DS
DS
RG1
G2S
G1
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
= 5 V, V
= 4, I = 20 µA
V
V
0.5
0.8
G2S
D
G1S(OFF)
G2S(OFF)
= V
= 5 V, R = 56 kW, I = 20 µA
1.0
V
RG1
G1
D
Remark on improving intermodulation behavior:
By setting R smaller than 56 kW, typical value of I
will raise and improved intermodulation behavior
G1
DSO
will be performed.
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2 (4)
Document Number 85088
Rev. 1, 12–Nov–01
TSDF02424X/TSDF02424XR
Vishay Semiconductors
Electrical AC Characteristics
V
= V
= 5 V, V
= 4 V, R = 56 kW, I = I
f = 1 MHz, T
= 25°C, unless otherwise specified
DS
RG1
G2S
G1
D
DSO,
amb
Parameter
Test Conditions
Symbol Min. Typ. Max. Unit
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
y
20
24
1.7
15
0.9
26
21
45
1
28
2.1
30
mS
pF
fF
pF
dB
dB
dB
dB
21s
C
issg1
C
C
G
G
∆G
F
rss
oss
G = 2 mS, G = 0.5 mS, f = 200 MHz
S
L
ps
ps
G = 3.3 mS, G = 1 mS, f = 800 MHz
16.5
S
L
AGC range
Noise figure
V
= 5 V, V
= 1 to 4 V, f = 800 MHz
DS
G2S
ps
G = 2 mS, G = 0.5 mS, f = 200 MHz
S
L
G = 3.3 mS, G = 1 mS, f = 800 MHz
F
1.3
dB
S
L
Cross modulation
Input level for k = 1 % @ 0 dB AGC
f = 50 MHz, f = 60 MHz
X
X
90
dBµV
mod
mod
w
unw
Input level for k = 1 % @ 40 dB AGC
f = 50 MHz, f = 60 MHz
100
105
dBµV
w
unw
Dimensions of TSDF02424X/TSDF02424XR in mm
14280
Document Number 85088
Rev. 1, 12–Nov–01
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3 (4)
TSDF02424X/TSDF02424XR
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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4 (4)
Document Number 85088
Rev. 1, 12–Nov–01
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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