TSDF02424X_08 [VISHAY]
Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage; 双 - MOSMIC®- 2 AGC放大器，用于电视调谐器预安排与5 V电源电压
| 型号： | TSDF02424X_08 |
| 厂家： | 
VISHAY |
| 描述： | Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage |
| 文件： | 总5页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Vishay Semiconductors
®
Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage
with 5 V Supply Voltage
Comments
MOSMIC - MOS Monolithic Integrated Circuit
6
5
4
6
5
4
TY
TY
WC5
W5C
Features
CW
CW
• Two AGC amplifiers in a single package
1
2
3
1
2
3
• Easy Gate 1 switch-off with PNP switching
transistors inside PLL
TSDF02424X
TSDF02424XR
e3
• Integrated gate protection diodes
• Low noise figure
Electrostatic sensitive device.
Observe precautions for handling.
16602
• High gain, medium forward transadmittance
(24 mS typ.)
• Biasing network on chip
Mechanical Data
• Improved cross modulation at gain reduction
• High AGC-range with less steep slope
• SMD package, reverse pinning possible
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Typ: TSDF02424X
Case: SOT-363 Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Gate 1 (amplifier 1), 2 = Gate 2,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Source, 6 = Gate1 (amplifier 2)
Typ: TSDF02424XR
Case: SOT-363 Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Gate 1 (amplifier 1), 2 = Source,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Gate 2, 6 = Gate1 (amplifier 2)
V - Vishay
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Typical Application
Y - Year, is variable for digit from 0 to 9
(e.g. 0 = 2000, 1 = 2001)
CW - Calendar Week, is variable for
number from 01 to 52
Number of Calendar Week is always indicating
place of pin 1
2 (TSDF02424X)
5 (TSDF02424XR)
AGC
RFC
C
C
+5 V
G2 (common)
D
3
4
C
AMP1
RF out
G1
G1
1
6
RF in
+5 V
RG1
C
RFC
C
+5 V
D
AMP2
RF out
RF in
+5 V
S (common)
5 (TSDF02424X)
2 (TSDF02424XR)
RG1
16601
Parts Table
Part
Marking
Package
TSDF02424X
WC5
W5C
SOT-363
TSDF02424XR
SOT-363R
Document Number 85088
Rev. 1.3, 05-Sep-08
www.vishay.com
1
TSDF02424X/TSDF02424XR
Vishay Semiconductors
All of following data and characteristics are valid
for operating either amplifier 1 (pin 1, 3, 2, 5) or
amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VDS
Value
8
Unit
V
Drain - source voltage
Drain current
ID
25
10
mA
mA
Gate 1/Gate 2 - source peak
current
IG1/G2SM
Gate 1/Gate 2 - source voltage
+ VG1/
6
1.5
V
V
G2SM
- VG1SM
Total power dissipation
Channel temperature
Tamb ≤ 60 °C
Ptot
TCh
Tstg
160
mW
°C
°C
150
Storage temperature range
- 55 to + 150
Maximum Thermal Resistance
Parameter
Test condition
Symbol
RthChA
Value
450
Unit
K/W
1)
Channel ambient
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
V(BR)DSS
Min
12
Typ.
Max
Unit
V
Drain - source breakdown
voltage
ID = 10 μA, VG1S = VG2S = 0
Gate 1 - source breakdown
voltage
+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS
7
7
10
10
V
V
Gate 2 - source breakdown
voltage
IG2S = 10 mA, VG2S = VDS = 0
V(BR)G2SS
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0
+ IG1SS
IG2SS
IDSO
20
20
18
nA
nA
Gate 2 - source leakage current
V
G2S = 5 V, VG1S = VDS = 0
DS = VRG1 = 5 V, VG2S = 4 V,
RG1 = 56 kΩ
Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 μA VG1S(OFF)
Gate 2 - source cut-off voltage DS = VRG1 = 5 V, RG1 = 56 kΩ, VG2S(OFF)
ID = 20 μA
Remark on improving intermodulation behavior:
By setting RG1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed.
Drain - source operating current
V
8
13
mA
0.5
0.8
1.3
1.4
V
V
V
1.0
www.vishay.com
2
Document Number 85088
Rev. 1.3, 05-Sep-08
TSDF02424X/TSDF02424XR
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
V
DS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ, ID = IDSO, f = 1 MHz
Parameter
Test condition
Symbol
|y21s
Min
20
Typ.
24
Max
28
Unit
mS
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
|
Cissg1
Crss
1.7
15
2.1
30
pF
fF
Coss
Gps
0.9
26
pF
dB
G
S = 2 mS, GL = 0.5 mS,
f = 200 MHz
S = 3,3 mS, GL = 1 mS,
G
Gps
ΔGps
F
16.5
21
45
1
dB
dB
f = 800 MHz
AGC range
Noise figure
VDS = 5 V, VG2S = 1 to 4 V,
f = 800 MHz
GS = 2 mS, GL = 0.5 mS,
dB
f = 200 MHz
GS = 3.3 mS, GL = 1 mS,
f = 800 MHz
F
1.3
dB
Cross modulation
Input level for k = 1 % @ 0 dB
AGC fw = 50 MHz,
Xmod
90
dBμV
funw = 60 MHz
Input level for k = 1 % @ 40 dB
AGC fw = 50 MHz,
Xmod
100
105
dBμV
funw = 60 MHz
Package Dimensions in mm (Inches)
14280
Document Number 85088
Rev. 1.3, 05-Sep-08
www.vishay.com
3
TSDF02424X/TSDF02424XR
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 85088
Rev. 1.3, 05-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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