TSDF02830Y [ETC]
Analog Miscellaneous ; 模拟杂项\n
| 型号： | TSDF02830Y |
| 厂家： | 
ETC |
| 描述： | Analog Miscellaneous
|
| 文件： | 总6页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSDF02830Y
Vishay Semiconductors
VISHAY
Dual - MOSMIC®- two AGC Amplifiers for
TV-Tuner Prestage with
5 V Supply Voltage
6
5
4
VY WM2
Comments
MOSMIC - MOS Monolithic Integrated Circuit
CW
1
2
3
16903
Electrostatic sensitive device.
Observe precautions for handling.
Features
Mechanical Data
Weight: 6 mg
Case: SOT 363
V - Vishay
• Easy Gate 1 switch-off with PNP switching transis-
tors inside PLL
• Two differently optimized amplifiers in a single
package
• Integrated gate protection diodes
• Low noise figure, high gain
Y - Year, is variable for digit from 0 to 9
(e.g. 0 = 2000, 1 = 2001)
• Typical forward transadmittance of 31 mS resp 28
mS
CW - Calendar Week, is variable for number
from 01 to 52
• Partly internal self biasing-network on chip
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
Number of Calendar Week is always indicating
place of pin 1
Pinning:
• Main AGC control range from 3 V to 0.5 V
• Supply voltage 5 V (3 V to 7 V)
1 = Gate 1 (amplifier 1), 2 = Gate 2,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Source, 6 = Gate1 (amplifier 2)
• SMD package, standard pinning
Applications
Low noise gain controlled VHF and UHF input stages,
such as in digital and analog TV tuners.
AGC
2
RFC
C
C
+5 V
G2 (common)
AMP1
D
3
4
C
VHF out
G1
G1
1
6
VHF in
+5 V
RG1
C
RFC
C
+5 V
D
AMP2
UHF out
UHF in
+5 V
S (common)
5
RG1
16902
Document Number 85108
Rev. 1, 23-Oct-02
www.vishay.com
1
TSDF02830Y
Vishay Semiconductors
VISHAY
Parts Table
Part
Marking
Package
TSDF02830Y
WM2
SOT363
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for VHF applications
Parameter
Test condition
Symbol
VDS
Value
8
Unit
V
Drain - source voltage
Drain current
ID
30
10
mA
mA
Gate 1/Gate 2 - source peak
current
IG1/G2SM
Gate 1 - source voltage
+ VG1SM
- VG1SM
VG2SM
Ptot
6
V
V
1.5
6
Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient
V
Tamb ≤ 60 °C
200
150
mW
°C
°C
K/W
TCh
Tstg
- 55 to + 150
450
on glass fibre printed board (25 x
RthChA
20 x 1.5) mm3 plated with 35 µm
Cu
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications
Parameter
Test condition
Symbol
VDS
Value
8
Unit
V
Drain - source voltage
Drain current
ID
25
10
mA
mA
Gate 1/Gate 2 - source peak
current
IG1/G2SM
Gate 1 - source voltage
+ VG1SM
- VG1SM
VG2SM
Ptot
6
V
V
1.5
Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient
6
200
V
Tamb ≤ 60 °C
mW
°C
°C
K/W
TCh
150
Tstg
- 55 to + 150
450
on glass fibre printed board (25 x
RthChA
20 x 1.5) mm3 plated with 35 µm
Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for VHF applications
Parameter
Test condition
Symbol
Min
12
Typ.
Max
Unit
V
Drain - source breakdown voltage ID = 10 µA, VG1S = VG2S = 0
Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0
V(BR)DSS
+ V(BR)G1SS
V(BR)G2SS
7
7
10
10
V
V
Gate 2 - source breakdown voltage
IG2S = 10 mA, VG1S = VDS = 0
Document Number 85108
Rev. 1, 23-Oct-02
www.vishay.com
2
TSDF02830Y
Vishay Semiconductors
VISHAY
Parameter
Test condition
Symbol
+ IG1SS
Min
8
Typ.
Max
20
Unit
nA
Gate 1 - source leakage current
Gate 2 - source leakage current
Drain - source operating current
+ VG1S = 5 V, VG2S = VDS = 0
VG2S = 5 V, VG1S = VDS = 0
IG2SS
IDSO
20
17
nA
VDS = VRG1 = 5 V, VG2S = 4 V, RG1
= 56 kΩ
12
mA
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
VDS = 5 V, VG2S = 4, ID = 20 µA
VG1S(OFF)
VG2S(OFF)
0.3
0.3
1.0
1.2
V
V
VDS = VRG1 = 5 V, RG1 = 56 kΩ, ID
= 20 µA
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications
Parameter
Test condition
Symbol
Min
12
Typ.
Max
Unit
V
Drain - source breakdown voltage ID = 10 µA, VG1S = VG2S = 0
Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0
V(BR)DSS
+ V(BR)G1SS
V(BR)G2SS
+ IG1SS
IG2SS
7
7
10
10
20
20
17
V
V
Gate 2 - source breakdown voltage
Gate 1 - source leakage current
Gate 2 - source leakage current
Drain - source operating current
IG2S = 10 mA, VG1S = VDS = 0
+ VG1S = 5 V, VG2S = VDS = 0
VG2S = 5 V, VG1S = VDS = 0
nA
nA
mA
VDS = VRG1 = 5 V, VG2S = 4 V, RG1
= 56 kΩ
IDSO
8
12
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
VDS = 5 V, VG2S = 4, ID = 20 µA
VG1S(OFF)
VG2S(OFF)
0.3
0.3
1.0
1.2
V
V
VDS = VRG1 = 5 V, RG1 =100 kΩ, ID
= 20 µA
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Amplifier 1
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ, ID = IDSO, f = 1 MHz, Tamb = 25 °C, unless otherwise specified
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for VHF applications
Parameter
Test condition
Symbol
|y21s
Min
23
Typ.
28
Max
33
Unit
mS
Forward transadmittance
|
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
Cissg1
Crss
2.5
20
3.0
pF
fF
Coss
Gps
0.9
32
pF
dB
GS = 2 mS, BS = BSopt, GL = 0.5
mS, BL = BLopt, f = 200 MHz
GS = 2 mS, BS = BSopt, GL = 1 mS,
BL = BLopt, f = 400 MHz
Gps
Gps
28
22
dB
dB
GS = 3.3 mS, BS = BSopt, GL = 1
mS, BL = BLopt, f = 800 MHz
AGC range
Noise figure
VDS = 5 V, VG2S = 0.5 to 4 V, f = 200
Gps
F
50
dB
dB
dB
dB
MHz
GS = GL = 20 mS, BS = BL = 0, f =
50 MHz
4.5
1.0
1.5
6.0
1.6
2.3
GS = 2 mS, GL = 1 mS, BS = BSopt
f = 400 MHz
,
F
GS = 3.3 mS, GL = 1 mS, BS
Sopt, f = 800 MHz
=
F
B
Document Number 85108
Rev. 1, 23-Oct-02
www.vishay.com
3
TSDF02830Y
Vishay Semiconductors
VISHAY
Parameter
Test condition
Symbol
Xmod
Min
90
Typ.
Max
Unit
Cross modulation
Input level for k = 1 % @ 0 dB AGC
w = 50 MHz, funw = 60 MHz
dBµV
f
Input level for k = 1 % @ 40 dB
AGC fw = 50 MHz, funw = 60 MHz
Xmod
105
dBµV
Remark on improving intermodulation behavior:
By setting RG1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed.
Amplifier 2
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 kΩ, ID = IDSO, f = 1 MHz, Tamb = 25 °C, unless otherwise specified
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications
Parameter
Test condition
Symbol
|y21s
Min
27
Typ.
31
Max
35
Unit
mS
Forward transadmittance
|
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
Cissg1
Crss
1.9
20
2.3
pF
fF
Coss
Gps
0.9
33
pF
dB
GS = 2 mS, BS = BSopt, GL = 0.5
mS, BL = BLopt, f = 200 MHz
GS = 2 mS, BS = BSopt, GL = 1 mS,
BL = BLopt, f = 400 MHz
Gps
Gps
30
25
dB
dB
GS = 3.3 mS, BS = BSopt, GL = 1
mS, BL = BLopt, f = 800 MHz
AGC range
Noise figure
VDS = 5 V, VG2S = 0.5 to 4 V, f = 200
Gps
F
50
dB
dB
dB
dB
MHz
GS = GL = 20 mS, BS = BL = 0, f =
50 MHz
6.0
1.0
1.3
8.0
1.5
2.0
GS = 2 mS, GL = 1 mS, BS = BSopt
f = 400 MHz
,
F
GS = 3.3 mS, GL = 1 mS, BS
Sopt, f = 800 MHz
Input level for k = 1 % @ 0 dB AGC
w = 50 MHz, funw = 60 MHz
=
F
B
Cross modulation
Xmod
Xmod
90
dBµV
dBµV
f
Input level for k = 1 % @ 40 dB
AGC fw = 50 MHz, funw = 60 MHz
100
105
Remark on improving intermodulation behavior:
By setting RG1 smaller than 100 kΩ, e. g. 68 kΩ typical value of IDSO will raise and improved intermodulation behavior will be performed.
Document Number 85108
Rev. 1, 23-Oct-02
www.vishay.com
4
TSDF02830Y
Vishay Semiconductors
VISHAY
Package Dimensions in mm
14280
Document Number 85108
Rev. 1, 23-Oct-02
www.vishay.com
5
TSDF02830Y
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85108
Rev. 1, 23-Oct-02
www.vishay.com
6
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