TLCY5200 [VISHAY]
High Intensity LED, diameter 5 mm 30degree Untinted Non-Diffused; 高亮度LED ， 5mm直径30degree不着色非扩散
| 型号： | TLCY5200 |
| 厂家： | 
VISHAY |
| 描述： | High Intensity LED, diameter 5 mm 30degree Untinted Non-Diffused |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLC.52..
Vishay Semiconductors
VISHAY
High Intensity LED, ∅ 5 mm 30 ° Untinted Non-Diffused
\
94 8631
Description
The TLC.52.. series is a clear, non diffused 5 mm LED
for high end applications where supreme luminous
intensity required.
These lamps with clear untinted plastic case utilize
the highly developed ultrabright AlInGaP and InGaN
technologies.
The lens and the viewing angle is optimized to
achieve best performance of light output and visibility.
Features
• Untinted non diffused lens
• Utilizing ultrabright AllnGaP and
Applications
Interior and exterior lighting
InGaN technology
• High luminous intensity
Outdoor LED panels
• High operating temperature:
Instrumentation and front panel indicators
T (chip junction temperature)
j
Central high mounted stop lights (CHMSL)
for motor vehicles
up to 125 °C for AllnGaP devices
• Luminous intensity and color categorized for each
packing unit
Replaces incandescent lamps
Traffic signals
• ESD-withstand voltage:
Light guide design
2 kV acc. to MIL STD 883 D, Method 3015.7
for AllnGaP, 1 kV for InGaN
Parts Table
Part
Color, Luminous Intensity
Red, IV > 1350 mcd
Angle of Half Intensity ( ϕ)
Technology
AllnGaP on GaAs
TLCR5200
15
15
15
15
TLCY5200
TLCTG5200
TLCB5200
Ye ll ow, I V > 1350 mcd
True green, IV > 750 mcd
Blue, IV > 240 mcd
AllnGaP on GaAs
InGaN on SiC
InGaN on SiC
Document Number 83210
Rev. 5, 08-Apr-03
www.vishay.com
1
TLC.52..
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLCR5200 , TLCY5200
Parameter
Reverse voltage
Test condition
Symbol
VR
Value
5
Unit
V
DC forward current
Tamb ≤ 85 °C
tp ≤ 10 µs
IF
IFSM
PV
50
mA
A
Surge forward current
Power dissipation
1
135
Tamb ≤ 85 °C
mW
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
125
Tamb
Tstg
Tsd
- 40 to + 100
- 40 to + 100
260
°C
°C
t ≤ 5 s, 2 mm from body
°C
Thermal resistance junction/
ambient
RthJA
300
K/W
TLCTG5200 , TLCB5200
Parameter
Test condition
Symbol
VR
Value
5
Unit
V
Reverse voltage
DC forward current
Tamb ≤ 60 °C
tp ≤ 10 µs
IF
IFSM
PV
30
0.1
mA
A
Surge forward current
Power dissipation
Tamb ≤ 60°C
135
mW
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
100
Tamb
Tstg
Tsd
- 40 to + 100
- 40 to + 100
260
°C
°C
t ≤ 5 s, 2 mm from body
°C
Thermal resistance junction/
ambient
RthJA
300
K/W
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLCR5200
Parameter
Test condition
IF = 50 mA
Part
TLCR5200
Symbol
IV
Min
Typ.
Max
Unit
mcd
Luminous intensity 1)
Dominant wavelength
1350
611
4000
IF = 50 mA
IF = 50 mA
IF = 50 mA
λd
λp
∆λ
616
622
18
622
nm
nm
nm
Peak wavelength
Spectral bandwidth at
50 % Irel max
Angle of half intensity
Forward voltage
IF = 50 mA
IF = 50 mA
IR = 10 µA
IF = 50 mA
IF = 50 mA
ϕ
15
deg
V
VF
2.1
2.7
Reverse voltage
VR
5
V
Temperature coefficient of VF
Temperature coefficient of λd
TCVF
TCλd
- 3.5
0.05
mV/K
nm/K
1) in one Packing Unit IVMax./IVMin. ≤ 2.0
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2
Document Number 83210
Rev. 5, 08-Apr-03
TLC.52..
Vishay Semiconductors
VISHAY
Yellow
TLCY5200
Parameter
Test condition
IF = 50 mA
Part
Symbol
IV
Min
Typ.
Max
597
Unit
mcd
Luminous intensity 1)
Dominant wavelength
TLCY5200
1350
4000
IF = 50 mA
IF = 50 mA
IF = 50 mA
λd
λp
∆λ
585
590
593
17
nm
nm
nm
Peak wavelength
Spectral bandwidth at
50 % Irel max
Angle of half intensity
Forward voltage
IF = 50 mA
IF = 50 mA
IR = 10 µA
IF = 50 mA
IF = 50 mA
ϕ
15
deg
V
VF
2.1
2.7
Reverse voltage
VR
5
V
Temperature coefficient of VF
Temperature coefficient of λd
TCVF
TCλd
- 3.5
0.1
mV/K
nm/K
1) in one Packing Unit IVMax./IVMin. ≤ 2.0
True green
TLCTG5200
Parameter
Luminous intensity 1)
Dominant wavelength
Test condition
IF = 30 mA
IF = 30 mA
Part
Symbol
IV
Min
750
Typ.
Max
535
Unit
mcd
TLCTG5200
2000
λd
λp
∆λ
515
525
520
37
nm
nm
nm
Peak wavelength
IF = 30 mA
IF = 30 mA
Spectral bandwidth at
50 % Irel max
Angle of half intensity
Forward voltage
IF = 30 mA
IF = 30 mA
IR = 10 µA
IF = 30 mA
IF = 30 mA
ϕ
15
deg
V
VF
3.9
4.5
Reverse voltage
VR
5
V
Temperature coefficient of VF
Temperature coefficient of λd
TCVF
TCλd
- 4.5
0.02
mV/K
nm/K
1) in one Packing Unit IVMax./IVMin. ≤ 2.0
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Blue
TLCB5200
Parameter
Test condition
IF = 30 mA
Part
Symbol
IV
Min
240
Typ.
700
Max
476
Unit
mcd
Luminous intensity 1)
Dominant wavelength
TLCB5200
IF = 30 mA
IF = 30 mA
IF = 50 mA
λd
λp
∆λ
462
470
464
25
nm
nm
nm
Peak wavelength
Spectral bandwidth at
50 % Irel max
Angle of half intensity
Forward voltage
IF = 30 mA
IF = 30 mA
IR = 10 µA
IF = 30 mA
IF = 30 mA
ϕ
15
deg
V
VF
3.9
4.5
Reverse voltage
VR
5
V
Temperature coefficient of VF
Temperature coefficient of λd
TCVF
TCλd
- 5.0
0.02
mV/K
nm/K
1) in one Packing Unit IVMax./IVMin. ≤ 2.0
Document Number 83210
Rev. 5, 08-Apr-03
www.vishay.com
3
TLC.52..
Vishay Semiconductors
VISHAY
Typical Characteristics (T
= 25 °C unless otherwise specified)
amb
60
160
140
120
50
Blue
Truegreen
40
30
20
10
0
Yellow
100
Red
80
60
40
20
0
0
20
40
60
80
100 120
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
16708
16711
T
– Ambient Temperature ( °C )
T
amb
amb
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Ambient Temperature
0q
10q
20q
160
140
30q
40q
120
Blue
Truegreen
100
1.0
0.9
0.8
80
60
40
20
0
50q
60q
70q
80q
0.7
0.6
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
0.6 0.4 0.2
0
0.2
0.4
16709
17534
T
amb
Figure 2. Power Dissipation vs. Ambient Temperature
Figure 5. Rel. Luminous Intensity vs. Angular Displacement
60
50
100
90
Red
Yellow
80
70
60
50
40
30
20
10
40
30
20
10
0
Yellow
Red
0
0
20
40
60
80
100 120
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
16710
15974
V – Forward Voltage ( V )
F
T
amb
– Ambient Temperature ( °C )
Figure 3. Forward Current vs. Ambient Temperature
Figure 6. Forward Current vs. Forward Voltage
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4
Document Number 83210
Rev. 5, 08-Apr-03
TLC.52..
Vishay Semiconductors
VISHAY
10.00
1.00
0.10
0.01
100
90
80
70
60
50
40
30
20
10
True Green
Blue
Truegreen
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1
10
I – Forward Current ( mA )
F
100
16040
V
F
– Forward Voltage ( V )
16039
Figure 7. Forward Current vs. Forward Voltage
Figure 10. Relative Luminous Flux vs. Forward Current
10.00
10.00
Blue
Red
1.00
0.10
0.01
1.00
0.10
0.01
1
10
100
1
10
100
15978
I
F
– Forward Current ( mA )
16042
I
F
– Forward Current ( mA )
Figure 8. Relative Luminous Flux vs. Forward Current
Figure 11. Relative Luminous Flux vs. Forward Current
1.2
10.00
Red
I = 50 mA
F
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Yellow
1.00
0.10
0.01
1
10
100
570 580 590 600 610 620 630 640 650 660 670
15979
I
F
- Forward Current ( mA )
16007
l – Wavelength ( nm )
Figure 9. Relative Luminous Flux vs. Forward Current
Figure 12. Relative Intensity vs. Wavelength
Document Number 83210
Rev. 5, 08-Apr-03
www.vishay.com
5
TLC.52..
Vishay Semiconductors
VISHAY
1.2
Yellow
I = 50 mA
F
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
540 550 560 570 580 590 600 610 620 630 640
16008
16068
17539
l – Wavelength ( nm )
Figure 13. Relative Intensity vs. Wavelength
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
True Green
I = 30 mA
F
460 480 500 520 540 560 580 600 620
l – Wavelength ( nm )
Figure 14. Relative Intensity vs. Wavelength
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Blue
I = 30 mA
F
400 420 440 460 480 500 520 540 560
l – Wavelength ( nm )
Figure 15. Relative Intensity vs. Wavelength
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6
Document Number 83210
Rev. 5, 08-Apr-03
TLC.52..
Vishay Semiconductors
VISHAY
Package Dimensions in mm
14339
Document Number 83210
Rev. 5, 08-Apr-03
www.vishay.com
7
TLC.52..
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83210
Rev. 5, 08-Apr-03
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