TLCY5800 [VISHAY]
Ultrabright LED, 5 mm Untinted Non-Diffused; 超亮LED , 5毫米不着色非扩散型号: | TLCY5800 |
厂家: | VISHAY |
描述: | Ultrabright LED, 5 mm Untinted Non-Diffused |
文件: | 总7页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLCB / R / TG / Y5800
VISHAY
Vishay Semiconductors
Ultrabright LED, ∅ 5 mm Untinted Non-Diffused
Description
The TLC.58.. series is a clear, non diffused 5 mm LED
for high end applications where supreme luminous
intensity and a very small emission angle is required.
These lamps with clear untinted plastic case utilize
the highly developed ultrabright AlInGaP and GaP
technologies.
The very small viewing angle of these devices provide
19223
a very high luminous intensity.
Pb
e2
Pb-free
Features
• Untinted non diffused lens
• Utilizing ultrabright AllnGaP and InGaN
Applications
Interior and exterior lighting
Outdoor LED panels, displays
technology
• Very high luminous intensity
• Very small emission angle
Instrumentation and front panel indicators
• High operating temperature:
Tj (chip junction temperature)
up to 125 °C for AllnGaP devices
Central high mounted stop lights (CHMSL) for motor
vehicles
Replaces incandescent lamps
Traffic signals and signs
Light guide design
• Luminous intensity and color categorized for each
packing unit
• ESD-withstand voltage: 2 kV acc. to MIL STD 883
D, Method 3015.7 for AllnGaP, 1 kV for InGaN
• Lead-free device
Parts Table
Part
Color, Luminous Intensity
Red, I > 7500 mcd
Angle of Half Intensity ( ϕ)
Technology
AlInGaP on GaAs
TLCR5800
TLCY5800
TLCTG5800
TLCB5800
4 °
4 °
4 °
4 °
V
Yellow, I > 5750 mcd
AlInGaP on GaAs
InGaN on SiC
InGaN on SiC
V
True green, I > 2400 mcd
V
Blue, I > 750 mcd
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLCR5800 , TLCY5800 , TLCTG5800 , TLCB5800
Parameter Test condition
Reverse voltage
Part
Symbol
Value
5
Unit
V
V
I
R
DC Forward current
T
≤ 85°C
TLCR5800
TLCY5800
TLCTG5800
TLCB5800
50
50
30
30
mA
mA
mA
mA
amb
F
I
I
I
F
T
≤ 60°C
amb
F
F
Document Number 83178
Rev. 1.5, 30-Aug-04
www.vishay.com
1
TLCB / R / TG / Y5800
Vishay Semiconductors
VISHAY
Parameter
Test condition
≤ 10 µs
Part
Symbol
Value
1
Unit
A
Surge forward current
t
TLCR5800
I
p
FSM
TLCY5800
TLCTG5800
TLCB5800
TLCR5800
TLCY5800
TLCTG5800
TLCB5800
TLCR5800
TLCY5800
TLCTG5800
TLCB5800
I
I
I
1
0.1
A
A
FSM
FSM
FSM
0.1
A
Power dissipation
T
≤ 85°C
P
135
mW
mW
mW
mW
°C
amb
V
P
P
P
135
V
V
V
T
≤ 60°C
135
amb
135
Junction temperature
T
125
j
j
j
j
T
125
°C
T
T
100
°C
100
°C
Operating temperature range
Storage temperature range
Soldering temperature
T
- 40 to + 100
- 40 to + 100
260
°C
amb
T
°C
stg
t ≤ 5 s, 2 mm from body
T
°C
sd
Thermal resistance junction/
ambient
R
300
K/W
thJA
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Red
TLCR5800
Parameter
Test condition
= 50 mA
Part
Symbol
Min
Typ.
Max
Unit
1)
I
I
I
I
TLCR5800
I
V
7500
611
20000
Luminous intensity
F
F
F
F
Dominant wavelength
= 50 mA
= 50 mA
= 50 mA
λ
λ
616
622
18
622
nm
nm
nm
d
Peak wavelength
p
Spectral bandwidth
∆λ
at 50 % I
rel max
Angle of half intensity
Forward voltage
I
I
I
I
I
= 50 mA
= 50 mA
= 10 µA
= 50 mA
= 50 mA
ϕ
4
deg
V
F
F
R
F
F
V
V
2.1
2.7
F
Reverse voltage
5
V
R
Temperature coefficient of V
TC
- 3.5
0.05
mV/K
nm/K
F
VF
Temperature coefficient of λ
TC
λd
d
1)
in one Packing Unit I
/I
≤ 2.0
Vmax Vmin
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2
Document Number 83178
Rev. 1.5, 30-Aug-04
TLCB / R / TG / Y5800
VISHAY
Vishay Semiconductors
Yellow
TLCY5800
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
597
Unit
mcd
1)
I = 50 mA
TLCY5800
I
V
5750
14000
Luminous intensity
F
Dominant wavelength
Peak wavelength
I = 50 mA
λ
λ
585
590
593
17
nm
nm
nm
F
d
p
I = 50 mA
F
Spectral bandwidth at 50 % I
max
I = 50 mA
∆λ
rel
F
Angle of half intensity
I = 50 mA
ϕ
4
deg
V
F
Forward voltage
Reverse voltage
I = 50 mA
V
V
2.1
2.7
F
F
I
= 10 µA
5
V
R
R
Temperature coefficient of V
I = 50 mA
TC
VF
- 3.5
0.1
mV/K
nm/K
F
F
Temperature coefficient of λ
I = 50 mA
TC
d
F
λd
1)
in one Packing Unit I
/I
≤ 2.0
Vmax Vmin
True green
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
535
Unit
mcd
1)
I = 30 mA
TLCTG5800
I
V
2400
7000
Luminous intensity
F
Dominant wavelength
Peak wavelength
I = 30 mA
λ
λ
515
525
520
37
nm
nm
nm
F
d
p
I = 30 mA
F
Spectral bandwidth at 50 % I
max
I = 30 mA
∆λ
rel
F
Angle of half intensity
I = 30 mA
ϕ
4
deg
V
F
Forward voltage
Reverse voltage
I = 30 mA
V
V
3.9
4.5
F
F
I
= 10 µA
5
V
R
R
Temperature coefficient of V
I = 30 mA
TC
VF
- 4.5
0.02
mV/K
nm/K
F
F
Temperature coefficient of λ
I = 30 mA
TC
d
F
λd
1)
in one Packing Unit I
/I
≤ 2.0
Vmax Vmin
Blue
TLCB5800
Parameter
Test condition
Part
Symbol
Min
750
Typ.
Max
476
Unit
mcd
1)
I = 30 mA
TLCB5800
I
2500
F
V
Luminous intensity
Dominant wavelength
I = 30 mA
λ
λ
462
470
464
25
nm
nm
nm
F
d
p
Peak wavelength
I = 30 mA
F
Spectral bandwidth at 50 % I
max
I = 30 mA
∆λ
rel
F
Angle of half intensity
I = 30 mA
ϕ
4
deg
V
F
Forward voltage
Reverse voltage
I = 30 mA
V
V
3.9
4.5
F
F
I
= 10 µA
5
V
R
R
Temperature coefficient of V
I = 30 mA
TC
VF
- 5.0
0.02
mV/K
nm/K
F
F
Temperature coefficient of λ
I = 30 mA
TC
λd
d
F
1)
in one Packing Unit I
/I
≤ 2.0
Vmax Vmin
Document Number 83178
Rev. 1.5, 30-Aug-04
www.vishay.com
3
TLCB / R / TG / Y5800
Vishay Semiconductors
VISHAY
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
60
50
40
30
20
10
0
160
140
120
100
80
Yellow
Red
Yellow
Red
60
40
20
0
0
20
40
60
80
100 120
0
20
40
60
80
100 120
16708
16710
16711
16040
T
– Ambient Temperature ( °C )
T
amb
– Ambient Temperature ( °C )
amb
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Ambient Temperature
60
160
140
50
Blue
Truegreen
120
Blue
Truegreen
40
100
30
20
10
0
80
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
16709
T
amb
T
amb
Figure 2. Power Dissipation vs. Ambient Temperature
Figure 5. Forward Current vs. Ambient Temperature
100
100
90
90
Red
Yellow
80
80
Blue
Truegreen
70
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
2.5
3.0
3.5
4.0
4.5
5.0
5.5
15974
V
– Forward Voltage ( V )
V
F
- Forward Voltage ( V )
F
Figure 3. Forward Current vs. Forward Voltage
Figure 6. Forward Current vs. Forward Voltage
www.vishay.com
4
Document Number 83178
Rev. 1.5, 30-Aug-04
TLCB / R / TG / Y5800
VISHAY
Vishay Semiconductors
10
10
1
Yellow
Red
1
0.1
0.1
0.01
1
0.01
10
100
1
10
- Forward Current ( mA )
100
15978
I
F
- Forward Current ( mA )
15979
I
F
Figure 7. Relative Luminous Flux vs. Forward Current
Figure 10. Relative Luminous Flux vs. Forward Current
10.00
10.00
Blue
True Green
1.00
0.10
0.01
1.00
0.10
0.01
1
10
100
1
10
100
16042
I
F
- Forward Current ( mA )
16039
I
F
- Forward Current ( mA )
Figure 8. Relative Luminous Flux vs. Forward Current
Figure 11. Relative Luminous Flux vs. Forward Current
1.2
1.2
Red
Yellow
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
570 580 590 600 610 620 630 640 650 660 670
540 550 560 570 580 590 600 610 620 630 640
16007
λ - Wavelength ( nm )
16008
λ - Wavelength ( nm )
Figure 9. Relative Intensity vs. Wavelength
Figure 12. Relative Intensity vs. Wavelength
Document Number 83178
Rev. 1.5, 30-Aug-04
www.vishay.com
5
TLCB / R / TG / Y5800
Vishay Semiconductors
VISHAY
1.2
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
True Green
Blue
I = 30 mA
F
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
460 480 500 520 540 560 580 600 620
400 420 440 460 480 500 520 540 560
16068
λ - Wavelength ( nm )
17539
l – Wavelength ( nm )
Figure 13. Relative Intensity vs. Wavelength
Figure 14. Relative Intensity vs. Wavelength
Package Dimensions in mm
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6
Document Number 83178
Rev. 1.5, 30-Aug-04
TLCB / R / TG / Y5800
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83178
Rev. 1.5, 30-Aug-04
www.vishay.com
7
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